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In this paper we study polytypic defects in Indium Phosphide (InP) using the complementary first-principles methods of density functional theory and non-equilibrium Greens functions. Specifically we study interfaces between the ground state Zincblende crystal structure and the meta-stable Wurtzite phase, with an emphasis on the rotational twin plane defect, which forms due to the polytypic nature of InP. We found that the transition of the band structure across the interface is anisotropic and lasts 7 nm (3.5 nm). Due to this, a crystal-phase quantum well would require a minimal width of 10 nm, which eliminates rotational twin planes as possible quantum wells. We also found that for conducting current, the interfaces increase conductivity along the defect-plane ([11 2 ¯ ]), whereas due to real growth limitations, despite the interfaces reducing conductivity across the defect-plane ([111]), we found that a high degree of polytypic defects are still desirable. This was argued to be the case, due to a higher fraction of Wurtzite segments in a highly phase-intermixed system. [ABSTRACT FROM AUTHOR]

In this paper, we report a hierarchical simulation study of the electromigration (EM) problem in Cu-carbon nanotube (CNT) composite interconnects. This paper is based on the investigation of the activation energy and self-heating temperature using a multiscale electrothermal simulation framework. We first investigate the electrical and thermal properties of Cu-CNT composites, including contact resistances, using the density functional theory and reactive force field approaches, respectively. The corresponding results are employed in macroscopic electrothermal simulations taking into account the self-heating phenomenon. Our simulations show that although Cu atoms have similar activation energies in both bulk Cu and Cu-CNT composites, Cu-CNT composite interconnects are more resistant to EM thanks to the large Lorenz number of the CNTs. Moreover, we found that a large and homogenous conductivity along the transport direction in interconnects is one of the most important design rules to minimize the EM. [ABSTRACT FROM AUTHOR]

Abstract: The extended metal atoms chains (EMACs) constitute a diverse group of molecules differing in both length and identity of the constituent metal ions. They therefore present important challenges to our understanding of metal–metal bonding and its relationship to structural, magnetic and electron transport properties. In this review we summarise our current understanding of the origins of low-symmetry distortions in these chains and their impact on current flow through the molecule. We conclude that structure, magnetochemistry and resistance are all intimately related through a shared dependence on the energies and orientations of the frontier orbitals. [Copyright &y& Elsevier]

Abstract: Density functional theory in conjunction with non-equilibrium Green''s functions is used to explore the electron transport properties of a series of molecules based on the face-shared bioctahedral (M2Cl9) motif. The metal-metal bond orders in the chosen molecules, [Rh2Cl9]3–, [Ru2Cl9]3– and [Mo2Cl9]3– vary from 0 (Rh) to 1 (Ru) and 3 (Mo), and the calculations indicate that there is a direct correlation between conductance and bond order. The [Mo2Cl9]3– case is particularly interesting as it is well known from crystallographic studies to be very flexible, the Mo–Mo bond length varying over a range of ∼0.35Å depending on cation. The upper limit of this range marks the point where homolytic cleavage of the δπ components of the triple bond is complete, and this has a marked impact on electron transport. The localization of the metal-based orbitals means that those on the left (source) and right (drain) sides respond very differently to applied bias, giving rise to resonance effects at particular bias voltages, and hence to negative differential resistance effects. [Copyright &y& Elsevier]

In this work, we investigate the surface transfer doping process that is induced between hydrogen-terminated (100) diamond and the metal oxides, MoO3 and V2O5, through simulation using a semi-empirical Density Functional Theory (DFT) method. DFT was used to calculate the band structure and charge transfer process between these oxide materials and hydrogen terminated diamond. Analysis of the band structures, density of states, Mulliken charges, adsorption energies and position of the Valence Band Minima (VBM) and Conduction Band Minima (CBM) energy levels shows that both oxides act as electron acceptors and inject holes into the diamond structure. Hence, those metal oxides can be described as p-type doping materials for the diamond. Additionally, our work suggests that by depositing appropriate metal oxides in an oxygen rich atmosphere or using metal oxides with high stochiometric ration between oxygen and metal atoms could lead to an increase of the charge transfer between the diamond and oxide, leading to enhanced surface transfer doping. [ABSTRACT FROM AUTHOR]