1. Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress
- Author
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Meng Zhang, Xuerui Niu, Xiaohua Ma, Ting-Chang Chang, Fong-Min Ciou, Du Jiale, Bin Hou, Qing Zhu, Yilin Chen, Chong Wang, Yu-Shan Lin, Mei Wu, Kuan-Hsu Chen, Ling Yang, and Yue Hao
- Subjects
Materials science ,Condensed matter physics ,Scattering ,Transconductance ,Transistor ,Electron ,Electronic, Optical and Magnetic Materials ,law.invention ,Stress (mechanics) ,Barrier layer ,law ,Dehydrogenation ,Density functional theory ,Electrical and Electronic Engineering - Abstract
The gate and drain bias dependence of hot electron-induced degradation in GaN-based metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) was investigated in this work. Devices exhibit an abnormal increase in peak transconductance ( ${G}_{m}$ ,max) during hot carrier stress (HCS) and a partially quick recovery of that after removing the electrical stress. A physical model is proposed to explain the abnormal electrical characteristics caused by HCS. By using density functional theory (DFT), we calculated the energy for electrons to dehydrogenate preexisting [NGaH3]−1 complexes in GaN layer during stress. The dehydrogenation of defects affects the Gm,max of devices. Meanwhile, the neutralization of donor traps in AlGaN barrier layer also plays a significant role in the increase of Gm,max and the detrapping effect of electrons from these traps after removing the electrical stress accounts for the partially quick recovery of ${G}_{m, \text{max}}$ .
- Published
- 2021