Abstract. Five annealed BaTiO[sub 3]:Rh crystals, including asgrown and those reduced at 10[sup -5] atm, 10[sup -10] atm, 10[sup -12] atm, and 10[sup -1]4 atm oxygen partial pressures, were produced and investigated by two-beam coupling at wavelengths of 514 nm and 633 nm. The carrier type is a function of reduction degree and incident wavelength. The compensation points are around 10[sup -3] atm and 10[sup -12] atm oxygen partial pressures for 514 nm and 633 nm, respectively. The electrooptic gain is controlled by the photoconductivity--dark conductivity ratio, effects from the deep and shallow traps, and hole--electron competition, which are dependent on the reduction degree and incident wavelength. [ABSTRACT FROM AUTHOR]