Search

A stochastic cellular automata simulator capable of spatiotemporal modeling of the crystallization and amorphization behavior of phase-change materials during the complex annealing cycles used in optical and electrical memory applications is presented. This is based on consideration of bulk and surface energies to generate rates of growth and decay of crystallites built up from “monomers” that may themselves be quite complex molecules. The approach uses a stochastic Gillespie-type time-stepping algorithm to deal with events that may occur on a very wide range of time scales. The simulations are performed at molecular length scale and using an approximation of local free energy changes that depend only on immediate neighbors. The approach is potentially capable of spanning the length scales between ab initio atomistic modeling methods, such as density functional theory, and bulk-scale methods, such the Johnshon–Mehl–Avrami–Kolmogorov formalism. As an example the model is used to predict the crystallization behavior in the chalcogenide Ge2Sb2Te5 alloy commonly used in phase-change memory devices. The simulations include annealing cycles with nontrivial spatial and temporal variations in temperature, with good agreement to experimental incubation times at low temperatures while modeling nontrivial crystal size distributions and melting dynamics at higher temperatures. [ABSTRACT FROM AUTHOR]

Abstract: The development of flat, compact beam‐steering devices with no bulky moving parts is opening up a new route to a variety of exciting applications, such as LIDAR scanning systems for autonomous vehicles, robotics and sensing, free‐space, and even surface wave optical signal coupling. In this paper, the design, fabrication and characterization of innovative, nonvolatile, and reconfigurable beam‐steering metadevices enabled by a combination of optical metasurfaces and chalcogenide phase‐change materials is reported. The metadevices reflect an incident optical beam in a mirror‐like fashion when the phase‐change layer is in the crystalline state, but reflect anomalously at predesigned angles when the phase‐change layer is switched into its amorphous state. Experimental angle‐resolved spectrometry measurements verify that fabricated devices perform as designed, with high efficiencies, up to 40%, when operating at 1550 nm. Laser‐induced crystallization and reamorphization experiments confirm reversible switching of the device. It is believed that reconfigurable phase‐change‐based beam‐steering and beam‐shaping metadevices, such as those reported here, can offer real applications advantages, such as high efficiency, compactness, fast switching times and, due to the nonvolatile nature of chalcogenide phase‐change materials, low power consumption. [ABSTRACT FROM AUTHOR]

The use of phase-change materials for a range of exciting new optoelectronic applications from artificial retinas to ultrahigh-resolution displays requires a thorough understanding of how these materials perform under a combination of optical and electrical stimuli. This study reports for the first time the complex link between the electronic and optical properties in real-world crossbar nanoscale devices constructed by confining a thin layer of Ge2Sb2Te5 between transparent indium tin oxide electrodes, forming an optical nanocavity. A novel proof-of-concept device that can be operated by a combination of optical and electrical stimuli is presented, leading the way for the development of further applications based on mixed-mode electro-optical operation. [ABSTRACT FROM AUTHOR]

Phase-change devices exhibit characteristic threshold switching from the reset (off) to the set (on) state. Mainstream understanding of this electrical switching phenomenon is that it is initiated electronically via the influence of high electric fields on inter-band trap states in the amorphous phase. However, recent work has suggested that field induced (crystal) nucleation could instead be responsible. We compare and contrast these alternative switching 'theories' via realistic simulations of device switching both with and without electric field dependent contributions to the system free energy. Results show that although threshold switching can indeed be obtained purely by electric field induced nucleation, the fields required are significantly larger than experimentally measured values. [ABSTRACT FROM AUTHOR]

Abstract: Scanning electrical probe memory using Ge2Sb2Te5 has been considered as one of the promising contenders for next-generation data storage device, due to its ultra-high capacity, short access time, and low power consumption. Therefore, a numerical model based on classical nucleation-growth theory was developed to simulate the crystallisation behaviour of Ge2Sb2Te5 material in order to help understanding the physics mechanism of scanning electrical probe memory and thus provide the performance improvement. The crystallisation of Ge2Sb2Te5 in this model is first induced by the advent of the nuclei determined by nucleation probability, followed by the subsequent growth relying on the growth velocity. Results obtained from this model are in a good agreement with the experimental counterpart, revealing a potential of storage density of terabit per square inch. [Copyright &y& Elsevier]

Emerging electrical memory technologies based on phase-change materials capitalize on a fast amorphous-to-crystalline transition. Recent evidence from measurements of relaxation oscillations and switching statistics in phase-change memory devices indicates the possibility that electric field induced crystal nucleation plays a dominant role in defining the characteristic electrical switching behavior. Here we present a detailed kinetics study of crystallization in the presence of an electric field for the phase-change material Ge2Sb2Te5. We derive quantitative crystallization maps to show the effects of both temperature and electric field on crystallization and we identify field ranges and parameter values where the electric field effects might play a significant role. [ABSTRACT FROM AUTHOR]