1. Evidence for Non-Arrhenius Kinetics of Crystallization in Phase Change Memory Devices.
- Author
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Ciocchini, Nicola, Cassinerio, Marco, Fugazza, Davide, and Ielmini, Daniele
- Subjects
ARRHENIUS equation ,CRYSTALLIZATION ,PHASE change memory ,TEMPERATURE measurements ,PHASE transitions ,THERMAL conductivity - Abstract
The programming speed in a phase change memory (PCM) relies on the kinetics of crystallization in the pulsed regime. To predict the programming speed and retention of a PCM, a careful understanding and modeling of crystallization in the phase change material is essential. In this paper, we study crystallization kinetics directly in PCM devices. From thermal annealing and pulsed-set experiments, we extract the temperature dependence of the crystallization in a wide temperature range between 170^\circC and the melting point (about 620^\circC). Our results indicate two markedly different activation energies below/above 300^\circC, thus providing evidence for a non-Arrhenius crystallization kinetics in PCM. [ABSTRACT FROM PUBLISHER]
- Published
- 2013
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