1. Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation.
- Author
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Inenaga, Kohei, Motomura, Ryo, Ishimaru, Manabu, Nakamura, Ryusuke, and Yasuda, Hidehiro
- Subjects
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ELECTRON beams , *CRYSTALLIZATION , *CRYSTALLINE interfaces , *SUPERCOOLED liquids , *IRRADIATION , *TRANSMISSION electron microscopy , *FREE electron lasers - Abstract
Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn). [ABSTRACT FROM AUTHOR]
- Published
- 2020
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