1. The Formation of Boron‐Doped Polycrystalline Si with Extremely Low Resistivities at Low Temperatures
- Author
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Yuuichi Mikata, Kasai Yoshio, Kikuo Yamabe, and Junichi Shiozawa
- Subjects
Amorphous silicon ,Materials science ,Silicon ,Renewable Energy, Sustainability and the Environment ,Annealing (metallurgy) ,Analytical chemistry ,Mineralogy ,chemistry.chemical_element ,Chemical vapor deposition ,engineering.material ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,Polycrystalline silicon ,chemistry ,Electrical resistivity and conductivity ,Materials Chemistry ,Electrochemistry ,engineering ,Crystallite ,Boron - Abstract
A process consisting of the deposition of amorphous silicon at low temperatures and subsequent annealing has been proposed for fabricating a boron-doped polycrystalline silicon film with a low resistivity. This process realized large grain growth up to 3 to 5 μm, leading to a low resistivity of 1.4 mΩ.cm, which one-half to about one-third compared with that of direct deposited boron doped polysilicon. In addition to this, extremely low deposition temperature (∼350 o C) using a Si 2 H 6 /B 2 H 6 mixture attained uniform boron concentration across the wafers
- Published
- 1994
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