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Abstract Sm3+, Pr3+ and Dy3+-doped Ca 3 Nb 1.6875 Ga 3.1875 O 12 - CNGG and Ca 3 Li 0.275 Nb 1.775 Ga 2.95 O 12 - CLNGG crystals are of interest as solid-state laser materials emitting in the yellow-orange spectral range, especially for diode pumping due to their partially disordered nature. In this work, for the first time to our knowledge, single crystals of Sm, Pr and Dy-doped CNGG and CLNGG crystals were grown by the Czochralski method. For the doping of CNGG and CLNGG crystals, five new stoichiometric garnets were synthesised by solid-state reaction method: praseodymium-gallium-garnet (PrGG), dysprosium-gallium-garnet (DyGG) and praseodymium-lithium-niobium-gallium-garnet (PrLNGG), samarium-lithium-niobium-gallium-garnet (SmLNGG), and dysprosium-lithium-niobium-gallium-garnet (DyLNGG). Samarium-gallium-garnet (SmGG) was also sintered and used for the doping of Sm:CNGG crystal. Structural properties of sintered materials and grown crystals were investigated by X-ray diffraction and the chemical compositions of the grown crystals were determined by inductively coupled plasma atomic emission spectrometry (ICP-AES) method. The spectroscopic investigations of the grown crystals have shown that they are promising laser materials in the yellow-orange spectral range. Highlights • Sm3+, Pr3+ and Dy3+-doped CNGG and CLNGG crystals were grown by Czochralski method. • New stoichiometric garnets were synthesised by solid-state reaction method. • Structural properties of sintered compounds and grown crystals were investigated. • Sm3+, Pr3+ and Dy3+-doped CNGG and CLNGG are promising yellow-orange laser crystals. [ABSTRACT FROM AUTHOR]

Abstract: Ba(Zn1/3Ta2/3)O3 (BZT) thin films were grown on Pt-coated Si substrates at 500°C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650°C for 1h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the −100 to +100°C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100ppm/°C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650°C. [Copyright &y& Elsevier]