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Grain rotation is commonly observed during the evolution of microstructures in polycrystalline materials of different kinds, including metals, ceramics, and colloidal crystals. It is widely accepted that interface migration in these systems is mediated by the motion of line defects with step and dislocation character, i.e., disconnections. We propose a crystallography-respecting continuum model for arbitrarily curved grain boundaries or heterophase interfaces, accounting for the disconnections' role in grain rotation. Numerical simulations demonstrate that changes in grain orientations, as well as interface morphology and internal stress field, are associated with disconnection flow. Our predictions agree with molecular dynamics simulation results for pure capillarity-driven evolution of grain boundaries and are interpreted through an extended Cahn-Taylor model. [ABSTRACT FROM AUTHOR]

The microstructure of polycrystalline materials consists of networks of grain boundaries (GBs) and triple junctions (TJs), along which three GBs meet. The evolution of such microstructures may be driven by surface tension (capillarity), applied stresses, or other means that lead to a jump in chemical potential across the GBs. Here, we develop a two-dimensional model for the concurrent evolution of the GB/TJ network based upon the microscopic mechanism of motion, the motion of line defects (disconnections) in the GB that have both dislocation and step character. The evolution involves thermally activated disconnection formation/annihilation and migration of multiple disconnections modes/types. We propose this crystallography-respecting continuum model for the disconnection mechanism of GB/TJ dynamics derived with a variational approach based on the principle of maximum energy dissipation. The resultant TJ dynamics is reduced to an optimization problem with constraints that account for local microstructure geometry, conservation of Burgers vectors, and thermal-kinetic limitations on disconnection fluxes. We present an analysis of and numerical simulations based upon our model to demonstrate the dependence of the GB and TJ mobilities and the TJ drag effect on the disconnection properties, and we compare the predictions with molecular dynamics and experimental observations. [ABSTRACT FROM AUTHOR]

The grain-boundary (GB) mobility relates the GB velocity to the driving force. While the GB velocity is normally associated with motion of the GB normal to the GB plane, there is often a tangential motion of one grain with respect to the other across a GB; i.e., the GB velocity is a vector. GB motion can be driven by a jump in chemical potential across a GB or by shear applied parallel to the GB plane; the driving force has three components. Hence, the GB mobility must be a tensor (the off-diagonal components indicate shear coupling). Performing molecular dynamics (MD) simulations on a symmetric-tilt GB in copper, we demonstrate that all six components of the GB mobility tensor are nonzero (the mobility tensor is symmetric, as required by Onsager). We demonstrate that some of these mobility components increase with temperature, while, surprisingly, others decrease. We develop a disconnection dynamics-based statistical model that suggests that GB mobilities follow an Arrhenius relation with respect to temperature T below a critical temperature Tc and decrease as 1=T above it. Tc is related to the operative disconnection mode(s) and its (their) energetics. For any GB, which disconnection modes dominate depends on the nature of the driving force and the mobility component of interest. Finally, we examine the impact of the generalization of the mobility for applications in classical capillarity-driven grain growth. We demonstrate that stress generation during GB migration (shear coupling) necessarily slows grain growth and reduces GB mobility in polycrystals. [ABSTRACT FROM AUTHOR]

Grain boundary (GB) migration in polycrystalline materials necessarily implies the concurrent motion of triple junctions (TJs), the lines along which three GBs meet. Today, we understand that GB migration occurs through the motion of disconnections in the GB plane (line defects with both step and dislocation character). We present evidence from molecular dynamics grain growth simulations and idealized microstructures that demonstrates that TJ motion and GB migration are coupled through disconnection dynamics. Based on these results, we develop a theory of coupled GB/TJ migration and use it to develop a physically based, disconnection mechanism-specific continuum model of microstructure evolution. The continuum approach provides a means of reducing the complexity of the discrete disconnection picture to extract the features of disconnection dynamics that are important for microstructure evolution. We implement this model in a numerical, continuum simulation and demonstrate that it is capable of reproducing the molecular dynamics (MD) simulation results. [ABSTRACT FROM AUTHOR]

Grain boundary (GB) migration controls many forms of microstructural evolution in polycrystalline materials. Recent theory, simulations, and experiments demonstrate that GB migration is controlled by the motion of discrete line defects or disconnections. We present a continuum equation of motion for grain boundary derived from the underlying discrete disconnection mechanism. We also present an equation of motion for the junctions where multiple grain boundaries meet--as is always the case in a polycrystal. The resulting equation of motion naturally exhibits junction drag--a widely observed phenomena in junction dynamics in solids and liquids. [ABSTRACT FROM AUTHOR]