Search

Si 1− x Mn x diluted magnetic semiconductor films were deposited on the p-Si (100) single crystal wafer using magnetron sputtering method. Post-rapid thermal annealing treatments were performed at temperatures of 700 °C, 800 °C, and 900 °C in an argon atmosphere for approximately 5 min. Alternating gradient magnetometer, scanning electron microscope, atomic force microscope, X-ray diffraction and X-ray absorption near-edge structure spectra were employed to characterize magnetic properties and structure of the as-grown and annealed films. The films were about 2.8 μm thick and the RMS roughness of the surface was about 5–10 nm. All samples exhibit ferromagnetism at room temperature and the saturation magnetization reaches at the maximum value for the sample annealed at 700 °C. The silicide MnSi 1.7 was observed in the annealed samples. X-ray absorption near-edge structure spectra indicated that Mn atoms preferred to occupy substitutional or interstitial sites instead of precipitating to form silicide when annealing at 700 °C. It is inferred that the observed ferromagnetism is attributed to the interstitial and substitutional Mn dimers, which existed mostly in the sample annealed at 700 °C. The weaker ferromagnetism of the 900 °C annealed sample was closely related to the increased content of Mn 4 Si 7 compound.

Zn 0.95− x Co 0.05 Cu x O (ZCCO, where x = 0, 0.005, 0.01 and 0.015) thin films were deposited on Si (1 0 0) substrates by pulsed laser deposition technique. Crystal structures, surface morphologies, chemical compositions, bonding states and chemical valences of the corresponding elements for ZCCO films were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). XRD and FESEM results indicate that crystallite sizes of the highly (0 0 2)-oriented ZCCO films slightly decrease with increasing Cu content. When the Cu content increases from 0 to 0.015, Zn 2 p 3/2 , Co 2 p , Cu 2 p 3/2 and O 1 s peaks of the ZCCO film shift towards higher or lower binding energy regions, and the reasons for these chemical shifts are investigated by fitting the corresponding XPS narrow-scan spectra. Both in-plane and out-of-plane magnetization-magnetic field hysteresis loops of the ZCCO films reveal that all the films have room temperature ferromagnetisms (RTFMs). The conceivable origin of the RTFM is ascribed to the combined effects of the local structural disorder resulted from (Co 2+ , Cu 2+ , Cu 1+ )-cations which substitute Zn 2+ ions in the ZnO matrices, ferromagnetic coupling between coupled dopant atoms caused by Co 2+ (3 d 7 4 s 0 ) and Cu 2+ (3 d 9 4 s 0 ) spin states, and exchange interactions between the unpaired electron spins originating from lattice defects induced by Cu doping in the Zn 0.95 Co 0.05 O matrices.

Ba0.9Sr0.1TiO3 (BST) thin films were deposited on fused quartz and Pt/TiN/Si3N4/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V

Radio frequency magnetron sputtered Ba"0"."6"5Sr"0"."3"5TiO"3 (BST) thin films were etched in CF"4/Ar/O"2 plasma by magnetically enhanced reactive ion etching technique. The etching characteristics of BST films were characterized in terms of microstructure and electrical properties. Atomic force microscopy and X-ray diffraction results indicate that the microstructure of the etched BST film is degraded because of the rugged surface and lowered intensities of BST (100), (110), (111) and (200) peaks compared to the unetched counterparts. Dielectric constant and dielectric dissipation of the unetched, etched and postannealed-after-etched BST film capacitors are 419, 346, 371, 0.018, 0.039 and 0.031 at 100kHz, respectively. The corresponding dielectric tunability, figure of merit and remnant polarization are 19.57%, 11.56%, 17.25%, 10.87, 2.96, 5.56, [email protected]/cm^2, 2.32 and [email protected]/cm^2 at 25V, respectively. The leakage current density of 1.75x10^-^4 A/cm^2 at 15V for the etched BST capacitor is over two orders of magnitude higher than 1.28x10^-^6 A/cm^2 for the unetched capacitor, while leakage current density of the postannealed-after-etched capacitor decreases slightly. It means that the electrical properties of the etched BST film are deteriorated due to the CF"4/Ar/O"2 plasma-induced damage. Furthermore, the damage is alleviated, and the degraded microstructure and electrical properties are partially recovered after the etched BST film is postannealed at 923K for 20min under a flowing O"2 ambience.

Bi1−x Ce x FeO3 (x = 0, 0.05, 0.1, 0.15 and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si3N4/Si substrates by sol–gel technique. Crystal structures, surface chemical compositions and bonding states of BCFO films were investigated by X-ray diffraction and X-ray photoelectron spectroscopy (XPS), respectively. Compared to BiFeO3 (BFO) counterparts, the fitted XPS narrow-scan spectra of Bi 4f7/2, Bi 4f5/2, Fe 2p3/2, Fe 2p1/2 and O 1s peaks for Bi0.8Ce0.2FeO3 film shift towards higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58 and 0.49 eV, respectively. Dielectric constants and loss tangents of the BCFO (x = 0, 0.1 and 0.2) film capacitors are 159, 131, 116, 0.048, 0.041 and 0.035 at 1 MHz, respectively. Bi0.8Ce0.2FeO3 film has a higher remnant polarization (P r = 2.04 μC/cm2) than that of the BFO (P r = 1.08 μC/cm2) at 388 kV/cm. Leakage current density of the Bi0.8Ce0.2FeO3 capacitor is 1.47 × 10−4 A/cm2 at 388 kV/cm, which is about two orders of magnitude lower than that of the BFO counterpart. Furthermore, Ce cations are feasibly substituted for Bi3+ in the Bi0.8Ce0.2FeO3 matrix, possibly resulting in the enhanced ferroelectric properties for the decreased grain sizes and the reduced oxygen vacancies.

The sequential resonant tunneling in La0.5Sr0.5CoO3−δ (LSCO) semiconductor quantum dots (QDs) arrays were observed by current-voltage measurements under room temperature. A series of spikelike current peaks are found, which are resulted from the accumulation and depletion of electrons tunneling through the QDs embedded in insulated barriers. Temperature dependent onset-voltage blueshift and number variation in current peaks are also observed. These results confirm the size-induced metal-to-semiconductor transition in LSCO.