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The possibility of switching the direction of the dipole toroidal moment in ferroelectrics provides exciting opportunities for development of novel nanoscale memory and logic devices. However, a practical control of vortex chirality is rather challenging at present stage, not to mention via mechanical methods. In this paper, we performed the phase-field simulations to show that mechanical switching of vortex chirality can be achieved in ferroelectric nanoplatelet via defect engineering. After introducing a void defect in the nanoplatelet, relative stability of single-vortex state and multi-vortices state is found to be altered. Importantly, during stress-induced vortex multiplication process, the void is a favored nucleation core of new vortex; meanwhile, vortices tend to annihilate away from the void during a vortex annihilation process. As the favored regions of vortex nucleation and annihilation are not the same, a deterministic mechanical switching of vortex chirality can be achieved. The effects of temperature, shape of the nanoplatelet, void size, as well as void position, on the defect-mediated vortex switching behaviors are systematically revealed. Our study demonstrates the feasibility of vortex switching by mechanical loads and provides a route to control and develop electromechanical devices based on ferroic vortices.

Ferroelectric nanostructures have recently attracted considerable research interests for the discovery of novel topological dipole states. However, currently the preparation of high-quality nanodot arrays remains challenging, precluding the clear characterization of the dipole states in the nanodots. Combining pulsed laser deposition method with circular anodic aluminum oxide template, we reported an unexpected growth of high crystalline quality $\mathrm{PbZ}{\mathrm{r}}_{0.52}\mathrm{T}{\mathrm{i}}_{0.48}{\mathrm{O}}_{3}$ nanodot array in quadrilateral shape with size being \ensuremath{\sim}80 nm. Piezoresponse force microscopy measurement on various regions of the sample shows that the nanodots form rather diverse in-plane domain patterns, with the appearance of abundant topological domain defects including flux-closure vortices, center-divergent vortices, center-convergent vortices, and antivortices. A deterministic control of the domain structure of the nanodots via applying an electric field is further achieved. The nanodots were found to favor a center-divergent vortex pattern under negative tip bias, although the domain patterns of the nanodots at the as-grown state are different. Phase field simulations were performed to reproduce the experimental observation, and our results indicate that the screening condition of the nanodots is far from the ideal ones assumed in previous theoretical modellings. The nanodots are potentially useful in developing multi-state and reconfigurable electronic devices.

Recent experiments have demonstrated the existence of vortex or flux-closure domains in ferroelectric nanostructures, which are attractive to develop high-density data storage and novel configurable electronic devices. However, it remains challenging to stabilize in-plane vortex or flux-closure domains in ferroelectric film for the absence of a lateral geometry confinement. Based on a 3D phase field model, here we show that stabilization of isolated or interacting in-plane vortices in ferroelectric film can be achieved via applying a mechanical tip-force. The formation of such dipole vortices is caused by a conjoint effect of the tip-force-induced depolarization effect and in-plane strain. The effects of factors like film thickness, misfit strain, tip force and temperature on the vortex formation are systematically revealed and summarized as phase diagrams. The interaction between tip-induced vortices is also investigated. It is found that as the two tips get closer than the critical distance, the two initially isolated vortices become coupled, with identical or opposite chirality, depending on the distance between the two tips. A maximum data storage density of isolated in-plane vortices in ferroelectric thin film is estimated to be ~1 Tb in-2. Our work thus demonstrates a mechanical strategy to stabilize dipole vortices, and provides a comprehensive insight into the characteristics of ferroelectric film under a mechanical tip force.

Here we propose a method to detect the degenerated tetragonal vortex states (i.e., the toroidal axis is along the x-, y- or z-axis) in ferroelectric nanodots by applying a controllable surface charge (CSC) condition. Electrodes are placed at two parallel surfaces of the nanodot to form a short circuit. Surface charges with a controllable density are then applied to another two parallel surfaces of the nanodot. Under this CSC condition, a characteristic short-circuit current vs. time (I–t) curve related with the evolution of domain structure in a nanodot can be detected. The evolution paths and the characteristic short-circuit I–t curves of the degenerated vortex states in ferroelectric nanodots have been systematically revealed by our phase field simulations by solving the time-dependent Ginzburg–Landau (TDGL) equations. It is found that the degenerated vortex states exhibit distinct evolution features under the CSC condition. In the stages of placing electrodes and increasing surface charges, one, two, and zero short-circuit I–t peak(s) are observed in the nanodots with 〈100〉, 〈010〉 and 〈001〉 vortex states, respectively. Therefore, the unknown vortex states of a nanodot can be distinguished. We further investigate the effects of temperature and nanodot size on the characteristic I–t curves of the vortex states. The results show that the vortex states can be nondestructively distinguished by applying the CSC condition if the nanodot size is within a moderate range (i.e., 8–12 nm). Our study provides an alternative way of detecting the degenerated tetragonal vortex states in ferroelectric nanodots without the use of a scanning probe microscope, and also sheds light on the application of ferroelectric vortex domain structures in novel devices such as memories, sensors and actuators.

Transition-metal oxides have fascinating characteristics, and have been exploited for various applications, such as Mott transistors, optical switches and strain sensors, etc. Vanadium dioxide is a special and important transition-metal oxide, and exhibits the significant behavior of metal-insulator transition. In this work, single crystalline VO2(A) nanowires have been synthesized by a facile hydrothermal method. Due to the size and surface effects, the nanowires with different widths show great disparities in their hysteresis loops, phase transition temperatures and electrical conductivities. Our results show that the phase transition temperature is linearly dependent on the inverse of the nanowire widths, and a similar relationship between the electrical conductivity and the width of the nanowires has also been found. More interestingly, the first-order phase transition of the nanowire even coverts into high-order continuous phase transition when the width is below a critical size. To explore the intrinsic influence of the size and surface effects, the analysis of the transmission electron microscopy measurements showed that the rough surface structure of the nanowire is very different to the internal structure, and the thickness of this rough surface structure almost remains unchanged as the with of the nanowire decreases. Our results indicated that the surface structure has a remarkable effect on the phase transition characteristics decreasing nanowire width, and the suitable heterogeneous nucleation originating from the rough surface structure should play a crucial role in properties of the VO2(A) nanowires. Size-dependent phase transition features of the VO2(A) nanowires also suggest that the size and surface effects must be taken into consideration when designing VO2 nanodevices.

Dynamical phase field simulation is performed to reveal the dynamic characteristics of the tip-force-induced polarization switching in ferroelectric thin films. We demonstrate nontrivial influences of kinetic coefficient μ related to the second-order time derivative term in the dynamic equation of polarization on the mechanical switching behavior. It is found that such a term causes an oscillation feature of the switching process. Two characteristic switching times, i.e., the time when the inversed polarization begins to appear (denoted as τS1) and the time when the fraction of switched (c−) domain is largest during the loading process (denoted as τS2), can be defined to describe the tip-force-induced switching behavior. Both τS1 and τS2 are found to be affected by factors like misfit strain, temperature, and film thickness. Remarkably, the mechanical switching of polarization can be rather fast, with the switching time comparable to that of electrical switching. Due to the nontrivial dynamical effects, other important phenomena are observed: (a) the size and the pattern of switched domain (i.e., cylinder vs ring) in a single-point switching event strongly depend on the loading time, (b) the critical force of mechanical switching may be largely decreased by choosing a proper loading time, and (c) a large and stable domain pattern can still be written by a sweeping tip despite that the switched domain is not stable in the single-point switching event. Our study should provide new insights into the ultrafast phenomena in ferroelectric polarization switching under mechanical stimuli.

Single crystalline VO2(A) nanowires were synthesized by a facile hydrothermal method. The structural transition and temperature-driven conductivity switching of the VO2(A) nanowires were investigated. Our experimental results show that VO2(A) nanowires exhibit a distinct structural transition accompanied with an order of magnitude change in resistance, and a clear temperature-dependent current switching hysteresis. In order to analyze experimental results, theoretically, the electrical conductivity behavior was found to be consistent with Mott's small polaron model, the first-principles calculations also indicated that the apical V–O bond changes were mainly responsible for the band gap evolution and hence led to the conductivity switching.

This work reports a large controllability of domain evolution in BaTiO3 ferroelectric nanodot by isotropic surface charge screening (SCS). The phase field simulations show that the nanodot can exhibit fruitful domain patterns and evolution paths as functions of temperature and screening factor and changing direction of these two variables. Four typical types of experimental processes have been simulated, including the cooling-down and heating-up processes under fixed SCS conditions, and the processes of increasing and decreasing SCS under fixed temperatures. During these processes, the nanodot exhibits up to 13 different kinds of domain patterns, among which some are either polar or toroidal and some are both polar and toroidal. We summarized the phase diagrams as functions of temperature and charge screening factor, and also analyzed the typical domain evolution paths.

Correction for ‘Phase transition characteristics in the conductivity of VO2(A) nanowires: size and surface effects’ by C. Q. Wang et al., Phys. Chem. Chem. Phys., 2016, 18, 10262–10269.

This work aims to give a comprehensive view of magnetic state stability and transformations in PZT-film/FeGa-dot multiferroic composite systems due to the combining effects of size, shape and interfacial coupling strain. It is found that the stable magnetic state of the FeGa nanodots is not only a function of the size and shape of the nanodot but also strongly sensitive to the interfacial coupling strain modified by the polarization state of PZT film. In particular, due to the large magnetostriction of FeGa, the phase boundaries between different magnetic states (i.e., in-plane/out-of-plane polar states, and single-/multi-vortex states) of FeGa nanodots can be effectively tuned by the polarization-mediated strain. Fruitful strain-mediated transformation paths of magnetic states including those between states with different orderings (i.e., one is polar and the other is vortex), as well as those between states with the same ordering (i.e., both are polar or both are vortex) have been revealed in a comprehensive view. Our result sheds light on the potential of utilizing electric field to induce fruitful magnetic state transformation paths in multiferroic film-dot systems towards a development of novel magnetic random access memories.

Phase field simulations are performed to investigate the domain structures of soft ferromagnetic nanodots. It is found that the stability of the domain state is sensitive to its lateral dimensions. As the lateral dimensions increase, the stable domain state gradually changes from polar to vortex, with a transitional region where both the two ordered states are stable. Interestingly, the phase diagram is also a strong function of mechanical loads. By appropriately choosing the lateral dimensions, transformations between polar and vortex states can be induced or controlled by mechanical loads. The study provides instructive information for the applications of ferromagnetic nanostructures.