1. Theory of the effects of image potentials on tunnelling rates in the field-ion microscope
- Author
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R.J. Needs and S.C. Lam
- Subjects
Surface (mathematics) ,Microscope ,Chemistry ,business.industry ,Surfaces and Interfaces ,Electron ,Function (mathematics) ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Surfaces, Coatings and Films ,law.invention ,Optics ,law ,Atom ,Materials Chemistry ,Ionization energy ,Atomic physics ,business ,Field ion microscope ,Quantum tunnelling - Abstract
We explore the effects of image potentials on calculated tunnelling rates in field-ion microscopes (FIM's). We introduce a new tunnelling potential for the FIM which includes explicitly the effects of the image potentials. In addition we calculate the change in the effective ionisation energy of the gas atom due to the presence of the image potentials. Calculations of tunnelling rates are then performed using a three-dimensional JWKB method for both flat and curved metal surfaces. The image potentials make the tunnelling potential more repulsive which tends to produce a minimum in the tunnelling rate as a function of the distance of the atom from the atom from the surface. This effect is opposed by the decrease in the effective ionisation energy of the gas atom due to the image interactions, which raises the energy of the tunnelling electron and increases the tunnelling rate. When both effects of the image potentials are included the tunnelling rate is generally a decreasing function of the distance of the gas atom from the surface. We also investigate the effects of the image potentials on the widths of the spatial and energy distributions of ionised atoms.
- Published
- 1992
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