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We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked currents. We show that such a valley splitter is obtained when the barrier varies slowly on the moir\'e scale and induces a Lifshitz transition across the junction, i.e.\ a change in the Fermi surface topology. Furthermore, we show that for a given valley the reflected and transmitted current are transversely deflected, as time-reversal symmetry is effectively broken in each valley separately, resulting in valley-selective transverse focusing at zero magnetic field., Comment: 13 pages, 13 figures

The constituent particles of matter can arrange themselves in various ways, giving rise to emergent phenomena that can be surprisingly rich and often cannot be understood by studying only the individual constituents. Discovering and understanding the emergence of such phenomena in quantum materials-especially those in which multiple degrees of freedom or energy scales are delicately balanced-is of fundamental interest to condensed-matter research1,2. Here we report on the surprising observation of emergent ferroelectricity in graphene-based moire heterostructures. Ferroelectric materials show electrically switchable electric dipoles, which are usually formed by spatial separation between the average centres of positive and negative charge within the unit cell. On this basis, it is difficult to imagine graphene-a material composed of only carbon atoms-exhibiting ferroelectricity3. However, in this work we realize switchable ferroelectricity in Bernal-stacked bilayer graphene sandwiched between two hexagonal boron nitride layers. By introducing a moire superlattice potential (via aligning bilayer graphene with the top and/or bottom boron nitride crystals), we observe prominent and robust hysteretic behaviour of the graphene resistance with an externally applied out-of-plane displacement field. Our systematic transport measurements reveal a rich and striking response as a function of displacement field and electron filling, and beyond the framework of conventional ferroelectrics. We further directly probe the ferroelectric polarization through a non-local monolayer graphene sensor. Our results suggest an unconventional, odd-parity electronic ordering in the bilayer graphene/boron nitride moire system. This emergent moire ferroelectricity may enable ultrafast, programmable and atomically thin carbon-based memory devices.

A scalable tight-binding model is applied for large-scale quantum transport calculations in clean graphene subject to electrostatic superlattice potentials, including two types of graphene superlattices: moir\'e patterns due to the stacking of graphene and hexagonal boron nitride (hBN) lattices, and gate-controllable superlattices using a spatially modulated gate capacitance. In the case of graphene/hBN moir\'e superlattices, consistency between our transport simulation and experiment is satisfactory at zero and low magnetic field, but breaks down at high magnetic field due to the adopted simple model Hamiltonian that does not comprise higher-order terms of effective vector potential and Dirac mass terms. In the case of gate-controllable superlattices, no higher-order terms are involved, and the simulations are expected to be numerically exact. Revisiting a recent experiment on graphene subject to a gated square superlattice with periodicity of 35 nm, our simulations show excellent agreement, revealing the emergence of multiple extra Dirac cones at stronger superlattice modulation., Comment: 9 pages, 6 figures

When two dimensional crystals are atomically close, their finite thickness becomes relevant. Using transport measurements, we investigate the electrostatics of two graphene layers, twisted by θ = 22° such that the layers are decoupled by the huge momentum mismatch between the K and K′ points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance Cm and is therefore suited to extract Cm. We explain the large observed value of Cm by considering the finite dielectric thickness dg of each graphene layer and determine dg ≈ 2.6 Å. In a second experiment, we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi wavelength λ in each layer, showing that the layers are decoupled. Our findings are reproduced using tight-binding calculations., Science Advances, 6 (11), ISSN:2375-2548

We consider graphene superlattice miniband fermions probed by electronic interferometry in magneto-transport experiments. By decoding the observed Fabry-P\'erot interference patterns together with our corresponding quantum transport simulations, we find that the Dirac quasiparticles originating from the superlattice minibands do not undergo conventional cyclotron motion but follow more subtle trajectories. In particular, dynamics at low magnetic fields is characterized by peculiar, straight trajectory segments. Our results provide new insights into superlattice miniband fermions and open up novel possibilities to use periodic potentials in electron optics experiments.

We report an efficient technique to induce gate-tunable two-dimensional superlattices in graphene by the combined action of a back gate and a few-layer graphene patterned bottom gate complementary to existing methods. The patterned gates in our approach can be easily fabricated and implemented in van der Waals stacking procedures allowing flexible use of superlattices with arbitrary geometry. In transport measurements on a superlattice with lattice constant $a=40$ nm well pronounced satellite Dirac points and signatures of the Hofstadter butterfly including a non-monotonic quantum Hall response are observed. Furthermore, the experimental results are accurately reproduced in transport simulations and show good agreement with features in the calculated band structure. Overall, we present a comprehensive picture of graphene-based superlattices, featuring a broad range of miniband effects, both in experiment and in theoretical modeling. The presented technique is suitable for studying more advanced geometries which are not accessible by other methods., Comment: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright American Chemical Society after peer review. To access the final edited and published work, as well as the Supporting Information, see the journal reference or DOI below

One-dimensional (1D) graphene superlattices have been predicted to exhibit zero-energy modes a decade ago, but an experimental proof has remained missing. Motivated by a recent experiment that could possibly shed light on this, here we perform quantum transport simulations for 1D graphene superlattices, considering electrostatically simulated potential profiles as realistic as possible. Combined with the analysis on the corresponding miniband structures, we find that the zero modes generated by the 1D superlattice potential can be further cloned to higher energies, which are also accessible by tuning the average density. Our multiterminal transverse magnetic focusing simulations further reveal the modulation-controllable ballistic miniband transport for 1D graphene superlattices. A simple idea for creating a perfectly symmetric periodic potential with strong modulation is proposed at the end of this work, generating well aligned zero modes up to 6 within a reasonable gate strength., 5 pages with 4 figures for the main paper; supplementary material of 4 pages with 4 figures included

The conductance enhancement of QH states propagating far from disordered edges is directly observed. Separate biasing of channels, and gate-controlled transmission to contacts is demonstrated., The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p–n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.

[Image: see text] The specific rotational alignment of two-dimensional lattices results in a moiré superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of such superlattices have been reported for graphene/hBN and graphene/graphene systems. Here we report moiré superlattices in fully hBN encapsulated graphene with both the top and the bottom hBN aligned to the graphene. In the graphene, two different moiré superlattices form with the top and the bottom hBN, respectively. The overlay of the two superlattices can result in a third superlattice with a period larger than the maximum period (14 nm) in the graphene/hBN system, which we explain in a simple model. This new type of band structure engineering allows one to artificially create an even wider spectrum of electronic properties in two-dimensional materials.

We report the experimental observation of commensurability oscillations (COs) in 1D graphene superlattices. The widely tunable periodic potential modulation in hBN encapsulated graphene is generated via the interplay of nanopatterned few layer graphene acting as a local bottom gate and a global Si back gate. The longitudinal magneto-resistance shows pronounced COs, when the sample is tuned into the unipolar transport regime. We observe up to six CO minima, providing evidence for a long mean free path despite the potential modulation. Comparison to existing theories shows that small angle scattering is dominant in hBN/graphene/hBN heterostructures. We observe robust COs persisting to temperature exceeding $T=150$ K. At high temperatures, we find deviations from the predicted $T$-dependence, which we ascribe to electron-electron scattering., 6 pages, 4 figures + Supplemental Material. Accepted by PRL

Nanowires with helical surface states represent key prerequisites for observing and exploiting phase-coherent topological conductance phenomena, such as spin-momentum locked quantum transport or topological superconductivity. We demonstrate in a joint experimental and theoretical study that gated nanowires fabricated from high-mobility strained HgTe, known as a bulk topological insulator, indeed preserve the topological nature of the surface states, that moreover extend phase-coherently across the entire wire geometry. The phase-coherence lengths are enhanced up to 5 $\mu$m when tuning the wires into the bulk gap, so as to single out topological transport. The nanowires exhibit distinct conductance oscillations, both as a function of the flux due to an axial magnetic field, and of a gate voltage. The observed $h/e$-periodic Aharonov-Bohm-type modulations indicate surface-mediated quasi-ballistic transport. Furthermore, an in-depth analysis of the scaling of the observed gate-dependent conductance oscillations reveals the topological nature of these surface states. To this end we combined numerical tight-binding calculations of the quantum magneto-conductance with simulations of the electrostatics, accounting for the gate-induced inhomogenous charge carrier densities around the wires. We find that helical transport prevails even for strongly inhomogenous gating and is governed by flux-sensitive high-angular momentum surface states that extend around the entire wire circumference., Comment: 12 pages, 11 figures

We show that in gapped bilayer graphene, quasiparticle tunneling and the corresponding Berry phase can be controlled such that it exhibits features of single layer graphene such as Klein tunneling. The Berry phase is detected by a high-quality Fabry-P\'{e}rot interferometer based on bilayer graphene. By raising the Fermi energy of the charge carriers, we find that the Berry phase can be continuously tuned from $2\pi$ down to $0.68\pi$ in gapped bilayer graphene, in contrast to the constant Berry phase of $2\pi$ in pristine bilayer graphene. Particularly, we observe a Berry phase of $\pi$, the standard value for single layer graphene. As the Berry phase decreases, the corresponding transmission probability of charge carriers at normal incidence clearly demonstrates a transition from anti-Klein tunneling to nearly perfect Klein tunneling., Comment: 19 pages, 12 figures

While Fabry-Perot (FP) resonances and Moire superlattices are intensively studied in graphene on hexagonal boron nitride (hBN), the two effects have not been discussed in their coexistence. Here we investigate the FP oscillations in a ballistic pnp-junctions in the presence and absence of a Moire superlattice. First, we address the effect of the smoothness of the confining potential on the visibility of the FP resonances and carefully map the evolution of the FP cavity size as a function of densities inside and outside the cavity in the absence of a superlattice, when the cavity is bound by regular pn-junctions. Using a sample with a Moire superlattice, we next show that an FP cavity can also be formed by interfaces that mimic a pn-junction but are defined through a satellite Dirac point due to the superlattice. We carefully analyze the FP resonances, which can provide insight into the band-reconstruction due to the superlattice.

At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations., Comment: 5 pages, 4 figures

Effective control of the domain wall (DW) motion along the magnetic nanowires is of great importance for fundamental research and potential application in spintronic devices. In this work, a series of permalloy nanowires with an asymmetric notch in the middle were fabricated with only varying the width (d) of the right arm from 200 nm to 1000 nm. The detailed pinning and depinning processes of DWs in these nanowires have been studied by using focused magneto-optic Kerr effect (FMOKE) magnetometer, magnetic force microscopy (MFM) and micromagnetic simulation. The experimental results unambiguously exhibit the presence of a DW pinned at the notch in a typical sample with d equal to 500 nm. At a certain range of 200 nm d d dependences, which may be originated from different potential well/barrier generated by the asymmetric notch with varying d.

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real graphene can be captured by simulations using "theoretical artificial graphene." To prove this, we first derive a simple condition, along with its restrictions, to achieve band structure invariance for a scalable graphene lattice. We then present transport measurements for an ultraclean suspended single-layer graphene pn junction device, where ballistic transport features from complex Fabry-P\'erot interference (at zero magnetic field) to the quantum Hall effect (at unusually low field) are observed and are well reproduced by transport simulations based on properly scaled single-particle tight-binding models. Our findings indicate that transport simulations for graphene can be efficiently performed with a strongly reduced number of atomic sites, allowing for reliable predictions for electric properties of complex graphene devices. We demonstrate the capability of the model by applying it to predict so-far unexplored gate-defined conductance quantization in single-layer graphene., Comment: published version, with supplemental material

Chirality is one of the key features governing the electronic properties of single- and bilayer graphene: the basics of this concept and its consequences on transport are presented in this review. By breaking the inversion symmetry, a band gap can be opened in the band structures of both systems at the K-point. This leads to interesting consequences for the pseudospin and, therefore, for the chirality. These consequences can be accessed by investigating the evolution of the Berry phase in such systems. Experimental observations of Fabry-Perot interference in a dual-gated bilayer graphene device are finally presented and are used to illustrate the role played by the band gap on the evolution of the pseudospin. The presented results can be attributed to the breaking of the chirality in the energy range close to the gap., Comment: To be published in Physica Status Solidi (RRL) - Rapid Research Letters

Snake states are trajectories of charge carriers curving back and forth along an interface. There are two types of snake states, formed by either inverting the magnetic field direction or the charge carrier type at an interface. The former has been demonstrated in GaAs–AlGaAs heterostructures, whereas the latter has become conceivable only with the advance of ballistic graphene where a gap-less p–n interface governed by Klein tunnelling can be formed. Such snake states were hidden in previous experiments due to limited sample quality. Here we report on magneto-conductance oscillations due to snake states in a ballistic suspended graphene p–n junction, which occur already at a very small magnetic field of 20 mT. The visibility of 30% is enabled by Klein collimation. Our finding is firmly supported by quantum transport simulations. We demonstrate the high tunability of the device and operate it in different magnetic field regimes., Snake states describe electron trajectories that curve along an interface where the charge is inverted. Here, the authors investigate electronic transport in a ballistic graphene p–n junction and observe striking conductance oscillations that are a signature of these unusual states.

In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample., Comment: Including supporting information

We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge carrier density disparities, enabling the investigation of transport properties either in the unipolar (nn') or the bipolar (np') regime. In the latter pronounced single- and multibarrier Fabry-Perot (FP) resonances occur. We present measurements of different devices with different numbers of top gate stripes and spacings. The data are highly consistent with a phase coherent ballistic tight binding calculation and quantum capacitance model, whereas a superlattice effect and modification of band structure can be excluded., Comment: revised version

We report on the analysis of quantum transport through an Aharonov-Bohm ring with embedded double quantum dots. The normal metal leads are assumed to be weakly coupled to the two quantum dots. In the quantum dot region, Rashba spin-orbit coupling and electron-electron interaction are considered. The quantum transport is analyzed based on the Keldysh nonequilibrium Green's function formalism. A spin-polarized current emerges in this device due to the combined effect of a magnetic flux, threading through the AB ring, and the Rashba spin-orbit coupling. An interesting switching property of the spin polarization by turning on and off the gate within small voltage window is observed. This feature, however, does not exist in the Aharonov-Bohm ring structure with single quantum dot. We therefore propose a theoretical idea of a bipolar spin polarization switch

Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation similar to photons. Taking advantage of this optics-like electron dynamics, generic optical elements like lenses, beam splitters and wave guides have been proposed for electrons in engineered ballistic graphene. Tuning of these elements relies on the ability to adjust the carrier concentration in defined areas, including the possibility to create bipolar regions of opposite charge (p-n regions). However, the combination of ballistic transport and complex electrostatic gating remains challenging. Here, we report on the fabrication and characterization of fully suspended graphene p-n junctions. By local electro-static gating, resonant cavities can be defined, leading to complex Fabry-Perot interference patterns in the unipolar and the bipolar regime. The amplitude of the observed conductance oscillations accounts for quantum interference of electrons that propagate ballistically over long distances exceeding 1 micron. We also demonstrate that the visibility of the interference pattern is enhanced by Klein collimation at the p-n interface. This finding paves the way to more complex gate-controlled ballistic graphene devices and brings electron optics in graphene closer to reality., 15 pages, 5 figures

We investigate spin transport in diffusive graphene nanoribbons with both clean and rough zigzag edges, and long-range potential fluctuations. The long-range fields along the ribbon edges cause the local doping to come close to the charge neutrality point forming $p$-$n$ junctions with localized magnetic moments, similar to the predicted magnetic edge of clean zigzag graphene nanoribbons. The resulting random edge magnetization polarizes charge currents and causes sample-to-sample fluctuations of the spin currents obeying universal predictions. We show furthermore that, although the average spin conductance vanishes, an applied transverse in-plane electric field can generate a finite spin conductance. A similar effect can also be achieved by aligning the edge magnetic moments through an external magnetic field., Comment: 5 pages, 5 figures, RevTex

The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the graphene itself taken into account. The exact solution is demonstrated to be equivalent to the self-consistent Poisson-Dirac iteration method by showing an illustrative example, where multiple gates with irregular shapes and a nonuniform dopant concentration are considered. The solution therefore provides a fast and accurate way to compute spatially varying carrier density, on-site electric potential energy, as well as quantum capacitance for bulk graphene, allowing for any kind of gating geometry with any number of gates and any types of intrinsic doping., Comment: 4 pages, 3 figures

The quantum transport formalism based on tight-binding models is known to be powerful in dealing with a wide range of open physical systems subject to external driving forces but is, at the same time, limited by the memory requirement's increasing with the number of atomic sites in the scattering region. Here we demonstrate how to achieve an accurate simulation of quantum transport feasible for experimentally sized bulk graphene heterojunctions at a strongly reduced computational cost. Without free tuning parameters, we show excellent agreement with a recent experiment on Klein backscattering [A. F. Young and P. Kim, Nature Phys. 5, 222 (2009)]., 5 pages, 3 figures

Within an effective Dirac theory the low-energy dispersions of monolayer graphene in the presence of Rashba spin-orbit coupling and spin-degenerate bilayer graphene are described by formally identical expressions. We explore implications of this correspondence for transport by choosing chiral tunneling through pn and pnp junctions as a concrete example. A real-space Green's function formalism based on a tight-binding model is adopted to perform the ballistic transport calculations, which cover and confirm previous theoretical results based on the Dirac theory. Chiral tunneling in monolayer graphene in the presence of Rashba coupling is shown to indeed behave like in bilayer graphene. Combined effects of a forbidden normal transmission and spin separation are observed within the single-band n to p transmission regime. The former comes from real-spin conservation, in analogy with pseudospin conservation in bilayer graphene, while the latter arises from the intrinsic spin-Hall mechanism of the Rashba coupling., Comment: 10 pages, 10 figures

We consider plane junctions with graphene electrodes, which are formed by a single-level system ("molecule") placed between the edges of two single-layer graphene half planes. We calculate the edge Green functions of the electrodes and the corresponding lead self-energies for the molecular levels in the cases of semi-infinite single-layer electrodes with armchair and zigzag edges. We show two main effects: first, a peculiar energy-dependent level broadening, reflecting at low energies the linear energy dependence of the bulk density of states in graphene, and, second, the shift and splitting of the molecular level energy, especially pronounced in the case of the zigzag edges due to the influence of the edge states. These effects give rise to peculiar conductance features at finite bias and gate voltages., 8 pages, 8 figures, submitted to PRB

The incorporation of the InAs layer as the blocking layer into the GaSb side of the GaSb/AlSb/InAs single‐barrier interband tunneling structure resulting in a GaSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structure has been proven to greatly enhance negative differential resistance peak‐to‐valley current ratios and peak current density. The role of the InAs layer induced electron and light hole coupling related to the device performance is then investigated. A three‐band model, incorporating the coupling effect of the spin‐orbit split‐off hole band, is employed to probe the effect of the InAs layer thickness on the peak current densities and the subband properties of the GaSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures. The calculated peak current densities are in reasonable agreement with the experimental data reported previously. The transmission coefficients based on the three‐band calculation can be used to interpret the variations of the peak current densities well. In addition, the ‘‘repulsion’’ of the conduction subbands in the InAs well and light‐hole subbands in the GaSb well is observed for larger InAs layer thickness. A ‘‘transition energy region’’ resulting from the crossing of the respective subbands in the InAs and GaSb wells is also observed. The effect of the InAs layer induced subband properties related to the carrier transport in the peak current of the GaSb/InAs/GaSb/AlSb/InAs structure is also discussed.

A general form of the Hamiltonian for electrons confined to a curved one-dimensional (1D) channel with spin-orbit coupling (SOC) linear in momentum is rederived and is applied to a U-shaped channel. Discretizing the derived continuous 1D Hamiltonian to a tight-binding version, the Landauer-Keldysh formalism (LKF) for nonequilibrium transport can be applied. Spin transport through the U-channel based on the LKF is compared with previous quantum mechanical approaches. The role of a curvature-induced geometric potential which was previously neglected in the literature of the ring issue is also revisited. Transport regimes between nonadiabatic, corresponding to weak SOC or sharp turn, and adiabatic, corresponding to strong SOC or smooth turn, is discussed. Based on the LKF, interesting charge and spin transport properties are further revealed. For the charge transport, the interplay between the Rashba and the linear Dresselhaus (001) SOCs leads to an additional modulation to the local charge density in the half-ring part of the U-channel, which is shown to originate from the angle-dependent spin-orbit potential. For the spin transport, theoretically predicted eigenstates of the Rashba rings, Dresselhaus rings, and the persistent spin-helix state are numerically tested by the present quantum transport calculation., Comment: 16 pages, 7 figures

Anomalous spin Hall effects that belong to the intrinsic type in Dresselhaus (110) quantum wells are discussed. For the out-of-plane spin component, antisymmetric current-induced spin polarization induces opposite spin Hall accumulation, even though there is no spin-orbit force due to Dresselhaus (110) coupling. A surprising feature of this spin Hall induction is that the spin accumulation sign does not change upon bias reversal. Contribution to the spin Hall accumulation from the spin Hall induction and the spin deviation due to intrinsic spin-orbit force as well as extrinsic spin scattering, can be straightforwardly distinguished simply by reversing the bias. For the inplane component, inclusion of a weak Rashba coupling leads to a new type of $S_y$ intrinsic spin Hall effect solely due to spin-orbit-force-driven spin separation., Comment: 6 pages, 5 figures

The well-known experimentally observed \textit{sp}-derived Au(111) Shockley surface states with Rashba spin splitting are perfectly fit by an effective tight-binding model, considering a two-dimensional hexagonal lattice with $p_{z}$-orbital and nearest neighbor hopping only. The extracted realistic band parameters are then imported to perform the Landauer-Keldysh formalism to calculate nonequilibrium spin transport in a two-terminal setup sandwiching a Au(111) surface channel. Obtained results show strong spin density on the Au(111) surface and demonstrate (i) intrinsic spin-Hall effect, (ii) current-induced spin polarization, and (iii) Rashba spin precession, all of which have been experimentally observed in semiconductor heterostructures, but not in metallic surface states. We therefore urge experiments in the latter for these spin phenomena., 5 pages, 3 figures, to be published in Phys. Rev. B

The spin-Hall effect in the two-dimensional electron gas (2DEG) generates symmetric out-of-plane spin Sz accumulation about the current axis in the absence of external magnetic field. Here we employ the real space Landauer-Keldysh formalism [B. K. Nikolic et al., Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 73, 075303 (2006)] by considering a four-terminal setup to investigate the circumstances in which this symmetry is broken. For the absence of Dresselhaus interaction, starting from the applied out-of-plane B corresponding to Zeeman splitting energy 0 - 0.5 times the Rashba hopping energy tR, the breaking process is clearly seen. The influence of the Rashba interaction on the magnetization of the 2DEG is studied herein. For coexisted Rashba tR and Dresselhaus tD spin-orbit couplings in the absence of B, interchanging tR and tD reverses the entire accumulation pattern., Comment: 3 pages, 2 figures, appears in the proceedings of 10th MMM/INTERMAG conference

The intrinsic spin-Hall effect in hexagon-shaped samples is investigated. To take into account the spin-orbit couplings and to fit the hexagon edges, we derive the triangular version of the tight-binding model for the linear Rashba [Sov. Phys. Solid State 2, 1109 (1960)] and Dresselhaus [Phys. Rev. 100, 580 (1955)] [001] Hamiltonians, which allow direct application of the Landauer-Keldysh non-equilibrium Green function formalism to calculating the local spin density within the hexagonal sample. Focusing on the out-of-plane component of spin, we obtain the geometry-dependent spin-Hall accumulation patterns, which are sensitive to not only the sample size, the spin-orbit coupling strength, the bias strength, but also the lead configurations. Contrary to the rectangular samples, the accumulation pattern can be very different in our hexagonal samples. Our present work provides a fundamental description of the geometry effect on the intrinsic spin-Hall effect, taking the hexagon as the specific case. Moreover, broken spin-Hall symmetry due to the coexistence of the Rashba and Dresselhaus couplings is also discussed. Upon exchanging the two coupling strengths, the accumulation pattern is reversed, confirming the earlier predicted sign change in spin-Hall conductivity., 7 pages, 4 figures

A persistent spin helix (PSH) in spin-orbit-coupled two-dimensional electron systems was recently predicted to exist in two cases: [001] quantum wells (QWs) with equal coupling strengths of the Rashba and the Dresselhaus interactions (RD), and Dresselhaus-only [110] QWs. Here we present supporting results and further investigations, using our previous results [Phys. Rev. B 72, 153305 (2005)]. Refined PSH patterns for both RD [001] and Dresselhaus [110] QWs are shown, such that the feature of the helix is clearly seen. We also discuss the time dependence of spin to reexamine the origin of the predicted persistence of the PSH. For the RD [001] case, we further take into account the random Rashba effect, which is much more realistic than the constant Rashba model. The distorted PSH pattern thus obtained suggests that such a PSH may be more observable in the Dresselhaus [110] QWs, if the dopants cannot be regularly enough distributed., Comment: 6 pages, 4 figures

Electron spin precession in nonuniform Rashba-Dresselhaus two-dimensional electron systems along arbitrary continuous paths is investigated. We derive an analytical formula to describe the spin vectors (expectation values of the injected spin) in such conditions using a contour-integral method. The obtained formalism is capable of dealing with the nonuniformity of the Rashba spin-orbit field due to the inherent random distribution of the ionized dopants, and can be applied to curved one-dimensional quantum wires. Interesting examples are given, and the modification to the spin precession pattern in a Rashba-Dresselhaus channel when taking the random Rashba field into account is shown., Comment: 6 pages, 4 figures; derivations elaborated; to appear in Phys. Rev. B

We analyze the spin expectation values for injected spin-polarized electrons (spin vectors) in a [001]-grown Rashba-Dresselhaus two-dimensional electron gas (2DEG). We generalize the calculation for point spin injection in semi-infinite 2DEGs to finite-size spin injection in bounded 2DEGs. Using the obtained spin vector formula, significance of the channel direction for the Datta-Das transistor is illustrated. Numerical results indicate that the influence due to the finite-size injection is moderate, while the channel boundary reflection may bring unexpected changes. Both effects are concluded to decrease when the spin-orbit coupling strength is strong. Hence [110] is a robust channel direction and is therefore the best candidate for the design of the Datta-Das transistor., 5 pages, 4 figures, accepted for publication in Physical Review B

We present a theoretical method to calculate the expectation value of spin in an inversion-asymmetric two-dimensional (2D) system with respect to an arbitrarily spin-polarized electron state, injected via an ideal point contact. The 2D system is confined in a [001]-grown quantum well, where both the Rashba and the Dresselhaus spin-orbit couplings are taken into account. The obtained analytical results allow more concrete description of the spatial behaviors of the spin precession caused by individually the Rashba and the Dresselhaus terms. Applying the calculation on the Datta-Das spin-FET, whose original design considers only the Rashba effect inside the channel, we investigate the possible influence due to the Dresselhaus spin-orbit coupling. Concluded solution is the choice of +-[1+-10], in particular [110], as the channel direction., Comment: 4 pages, 2 figures, to be appeared in Journal of Magnetism and Magnetic Materials

We present the analytical result of the expectation value of spin resulting from an injected spin polarized electron into a semi-infinitely extended 2DEG plane with [001] growth geometry via ideal quantum point contact. Both the Rashba and Dresselhaus spin-orbit couplings are taken into account. A pictorial interpretation of the spin precession along certain transport directions is given. The spin precession due to the Rashba term is found to be especially interesting since it behaves simply like a windshield wiper which is very different from the ordinary precession while that due to the Dresselhaus term is shown to be crystallographic-direction-dependent. Some crystallographic directions with interesting and handleable behavior of spin precession are found and may imply certain applicability in spintronic devices., Comment: 5 pages, 2 figures, submitted to Phys. Rev. B

We investigate the properties of local spin current and local spin density in a tubular two-dimensional electron gas system with Rashba spin-orbit coupling. To evaluate the spatial distribution of the spin-related quantities in both equilibrium and nonequilibrium cases, we derive the tubular version of tight-binding model and then employ the Landauer–Keldysh formalism. Our work reveals that the tubular geometry effect can cause spin-orbit-induced phenomena very different from those in a planar sample. In particular, a persistent spin current circulating in the tubular system is found to be robust against the disorder, thus suggesting its observability. In spite of the absence of spin accumulation, the spin Hall current can still arise and even circulate in the tubular sample. Moreover, a spin-independent impurity will induce distinctive spin accumulation patterns around the impurity, which may serve as a novel mechanism to control electron spins by arranging the impurities for spintronic devices.

The two-dimensional paramagnetic-impurity-embedded electron gas with Rashba spin–orbit interaction in a four-terminal Landauer setup is studied. The mean-field-assisted Landauer–Keldysh formalism is employed to investigate the electron and impurity magnetizations (spin polarizations). A mirror symmetry is identified to characterize both electron and impurity magnetizations when the impurities are symmetrically (with respect to this mirror) positioned and when pinning fields are absent. In the equilibrium Landauer setup where electrodes remain at the same chemical potentials, the adopted formalism is justified by recovering the conventional (without spin–orbit interactions) Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange by applying a pinning field to the impurity. In the same setup, when further the Rashba spin–orbit interaction is turned on, the exchange between two impurities with one of the spins being pinned is comprehended as a consequence of the interplay between spin precession and the exchange oscillation. We find that in such an equilibrium system, at most two components of the spins can show up. For biased (non-equilibrium) setup, on the other hand, three components of the impurity spins can all be non-vanishing, which is distinguishable from the equilibrium case.

The spin accumulation and the out-of-plane spin current in two-dimensional x-y plane electron gas with the Rashba spin-orbit interaction are examined. Employing the real-space Landauer–Keldysh Green’s function formalism and considering the two-terminal Landauer setup with leads locally contacting the sample, we show that the accumulation patterns for the three components of the spins can be identified from their unique symmetries. With increasing lateral sample length, the out-of-plane spin accumulation oscillates by generating bubbles with alternating signs on the lateral edges. The out-of-plane spin currents are patterned by global vortices, and within the locally biased region of the sample, the direction of the current flow also oscillates as a function of the lateral sample length. © 2008 American Institute of Physics. DOI: 10.1063/1.2831799 Generating numerous applications in devices, which take advantage of the mechanism of electron spins, the emerging science, spintronics, has attracted considerable attention. In particular, experimental breakthroughs 1 have made one of the related issues in this field, the spin-Hall effect 2–5 SHE, an intensively investigated topic. In this effect, the moving along the +x direction electrons with spin-up +z and spin

We demonstrate that in an inversion-asymmetric two-dimensional electron system 2DES with both Rashba and Dresselhaus spin-orbit couplings taken into account, certain transport directions on which no spin precession occurs can be found when the injected spin is properly polarized. By analyzing the expectation value of spin with respect to the injected electron state on each space point in the 2DES, we further show that the adjacent regions with technically reachable widths along these directions exhibit nearly conserved spin. Hence a possible application in semiconductor spintronics, namely, precessionless spin transport wire, is proposed., 3 pages, 4 figures, to be appeared in Journal of Applied Physics, Proceedings of the 50th MMM Conference

Snake states and Aharonov-Bohm interferences are examples of magnetoconductance oscillations that can be observed in a graphene p-n junction. Even though they have already been reported in suspended and encapsulated devices including different geometries, a direct comparison remains challenging as they were observed in separate measurements. Due to the similar experimental signatures of these effects a consistent assignment is difficult, leaving us with an incomplete picture. Here we present measurements on p-n junctions in encapsulated graphene revealing several sets of magnetoconductance oscillations allowing for their direct comparison. We analysed them with respect to their charge carrier density, magnetic field, temperature and bias dependence in order to assign them to either snake states or Aharonov-Bohm oscillations. Furthermore we were able to consistently assign the various Aharonov-Bohm interferences to the corresponding area which the edge states enclose. Surprisingly, we find that snake states and Aharonov-Bohm interferences can co-exist within a limited parameter range., Comment: Main article and Supporting Information