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Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers intriguing phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO3, EuTiO3 and SrTiO3 band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3dxz/3dyz orbital character in the EuTiO3 layer and at the interface with SrTiO3 induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f7 magnetic moments. The results explain the observation of the carrier density-dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of emerging electronic phases and serve as a guide for the materials design of advanced electronic applications.

We have used grazing-angle infrared spectroscopy to detect the Berreman effect (BE) in the quasi-two-dimensional electron system (q-2DES) which forms spontaneously at the interface between SrTiO$_{3}$ (STO) and a thin film of LaAlO$_3$ (LAO). From the BE, which allows one to study longitudinal optical excitations in ultrathin films like the q-2DES, we have extracted at different temperatures its thickness, the charge density and mobility of the carriers under crystalline LAO (sample A), and the charge density under amorphous LAO (sample B). This quantity turns out to be higher than in sample A, but a comparison with Hall measurements shows that under amorphous LAO the charges are partly localized at low $T$ with a low activation energy (about 190 K in $k_B$ units), and are thermally activated according to a model for large polarons. The thickness of the q-2DES extracted from our spectra turns out to be 4 $\pm 1$ nm for crystalline LAO, 7 $\pm 2$ nm for amorphous LAO., Comment: 21 pages, 7 figures

We have prepared a LaMn0.5Ga0.5O3 thin film deposited by Pulsed Laser Deposition on a LSAT subst rate and we have measured its transmittance in the visible and near UV range, from 300 to 10 K. The aim was to shed light on the orgin of the electronic bands in the LMO family through a comparison with the corresponding spectra collected previously on the parent compound. Two out of the four bands detected have been assigned to the intersite d-d transitions between Mn +3 ions. The other ones were ascribed to the p-d Mn-O charge-transfer transitions. We are thus led to a ”mixed” interpretation where both a Mott-Hubbard and a charge-transfer approach concur to interpret the electronic spectrum of those manganites.

We present various concepts and experimental procedures to fabricate biepitaxial YBa 2Cu 3O 7-x grain boundary Josephson junctions. Different types of structures can be realized including "π-loops" in which one of the junctions is intrinsically π-phase shifted. Due to its versatility the biepitaxial technique offers the possibility to investigate basic aspects of the physics of grain boundary Josephson junctions, and also the influence of intrinsic and extrinsic d-wave induced effects in transport properties. Further, we discuss the possibility to produce circuits in which "0-" and "π-loops" are controllably located on the same chip, and intrinsic d-wave effects can be exploited.

The discovery of 2D conductivity at the LaAlO3/SrTiO3 interface has been linking, for over a decade, two of the major current research fields in materials science: correlated transition-metal-oxide systems and low-dimensional systems. Notably, despite the 2D nature of the interfacial electron gas, the samples are 3D objects with thickness in the mm range. This prevented researchers so far from adopting strategies that are only viable for fully 2D materials, or from effectively exploiting degrees of freedom related to strain, strain gradient and curvature. Here a method based on pure strain engineering for obtaining freestanding LaAlO3/SrTiO3 membranes with micrometer lateral dimensions is demonstrated. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each layer showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. The samples exhibit metallic conductivity and electrostatic field effect like 2D-electron systems in bulk heterostructures. The results open a new path for adding oxide functionalities into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.

Using x-ray magnetic circular dichroism and ab-initio calculations, we explore the La1-xSrxMnO3/LaAlO3/SrTiO3 (001) heterostructure as a mean to induce transfer of spin polarized carriers from ferromagnetic La1-xSrxMnO3 layer into the 2DEG (two-dimensional electron gas) at the LaAlO3/SrTiO3 interface. By out-of-plane transport measurements, the tunneling across the LaAlO3 barrier is also analyzed. Our results suggest small or vanishing spin-polarization for the 2DEG: magnetic dichroism does not reveal a neat signal on Ti atoms, while calculations predict, for the pristine stoichiometric interface, a small spin-resolved mobile charge of 2.5 x 10(13) cm(-2) corresponding to a magnetic moment of 0.038 mu(B) per Ti atom, tightly confined within the single SrTiO3 layer adjacent to LaAlO3. Such a small magnetization is hard to be detected experimentally and perhaps not robust enough to survive to structural disorder, native doping, or La1-xSrxMnO3 dead-layer effects. Our analysis suggests that, while some spin-diffusion cannot be completely ruled out, the use of ferromagnetic La1-xSrxMnO3 epilayers grown on-top of LaAlO3/SrTiO3 is not effective enough to induce robust spin-transport properties in the 2DEG. The examined heterostructure is nevertheless an excellent test-case to understand some fundamental aspects of the spin-polarized charge transfer in 2D wells.

Advances in growth technology of oxide materials allow single atomic layer control of heterostructures. In particular delta doping, a key materials' engineering tool in today's semiconductor technology, is now also available for oxides. Here we show that a fully electric-field-tunable spin-polarized and superconducting quasi-2D electron system (q2DES) can be artificially created by inserting a few unit cells of delta doping EuTiO3 at the interface between LaAlO3 and SrTiO3 oxides(1,2). Spin polarization emerges below the ferromagnetic transition temperature of the EuTiO3 layer (T-FM = 6-8 K) and is due to the exchange interaction between the magnetic moments of Eu-4f and of Ti-3d electrons. Moreover, in a large region of the phase diagram, superconductivity sets in from a ferromagnetic normal state. The occurrence of magnetic interactions, superconductivity and spin-orbit coupling in the same q2DES makes the LaAlO3/EuTiO3/SrTiO3 system an intriguing platform for the emergence of novel quantum phases in low-dimensional materials.

We measured high resolution Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS) of the undoped cuprates La$_2$CuO$_4$, Sr$_2$CuO$_2$Cl$_2$, CaCuO$_2$ and NdBa$_2$Cu$_3$O$_6$. The dominant spectral features were assigned to $dd$ excitations and we extensively studied their polarization and scattering geometry dependence. In a pure ionic picture, we calculated the theoretical cross sections for those excitations and used them to fit the experimental data with excellent agreement. By doing so, we were able to determine the energy and symmetry of Cu-3$d$ states for the four systems with unprecedented accuracy and confidence. The values of the effective parameters could be obtained for the single ion crystal field model but not for a simple two-dimensional cluster model. The firm experimental assessment of $dd$ excitation energies carries important consequences for the physics of high $T_c$ superconductors. On one hand, having found that the minimum energy of orbital excitation is always $\geq 1.4$ eV, i.e., well above the mid-infrared spectral range, leaves to magnetic excitations (up to 300 meV) a major role in Cooper pairing in cuprates. On the other hand, it has become possible to study quantitatively the effective influence of $dd$ excitations on the superconducting gap in cuprates., 22 pages, 11 figures, 1 table

We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on non-orthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, and Eu0.7Sr0.3MnO3 films on SrTiO3. Compiling the results from various material systems reveals a general strain dependence in which compressive strain strongly favors a-a+c- and a+a-c- rotation patterns and tensile strain weakly favors a-a-c+ structures. In contrast, EuFeO3 films grown on Pbnm-type GdScO3 under 2.3% tensile strain take on a uniform a-a+c- rotation pattern imprinted from the substrate, despite strain energy considerations that favor the a-a-c+ pattern. These results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A-site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures., Comment: submitted to PRB, comments welcomed

We investigated the role of strain on the magnetic properties of La0.7Sr0.3MnO3 epitaxial films grown on substrates with different crystallographic orientation. The magnetic characterization confirms the large magnetostriction due to the tensile stress applied by the SrTiO3 substrates. The data demonstrate that the easy direction of magnetization is aligned to the elongated, in-plane axis both in (110)- and (001)-oriented films. The in-plane anisotropy of (110) films is interpreted in the frame of a simple structural model. We provide evidence of a spatial separation between a conducting ferromagnetic and an insulating paramagnetic phase at the Curie temperature. The possible effect of such phase separation on the coercitive field and on the magnetization versus temperature is discussed. (c) 2006 Elsevier B.V. All rights reserved.

Concepts and experimental procedures to obtain different types of YBa 2 Cu 3 O 7 grain boundaries Josephson junction through the biepitaxial technique have been developed. Various seed layers (MgO, CeO 2 and SrTiO 3) and substrates (MgO, SrTiO 3) have been used providing, for the biepitaxial technique, additional flexibility in circuit design. A detailed investigation on transport properties evidenced good performances for both junctions and superconducting quantum interference devices. Experimental evidence is given of a conventional magnetic field behavior in 45° tilt Artificial Grain Boundary (AGB) for which no π-loops are predicted along the interface.

(110) and (103) YBa 2 Cu 3 O 7 films have been grown onto exact and vicinal (110) SrTiO 3 substrates, and on vicinal (110) MgO substrates with a SrTiO 3 buffer layer. The samples are carefully characterised by reciprocal space mapping with x-ray diffraction, in order to investigate the features of the typical double domain of (110) and (103) YBa 2 Cu 3 O 7 structure. It is demonstrated that vicinal cut substrates allow to select one film/substrate epitaxial relation. The growth properties of these thin films deposited on vicinal surfaces are discussed.

The authors have performed experiments on current-induced domain wall (DW) displacement in La0.7Sr0.3MnO3 nanostructures patterned by gallium (Ga) focused-ion-beam milling. A dc current is found to assist or hinder, according to polarity, an external magnetic field in the depinning of a DW trapped in a nanoconstriction. For large enough currents, the DW depinning occurs in the absence of external magnetic field. The depinning current depends on the transverse anisotropy constant of the region toward which the DW is displaced.

We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO) thin films grown on (001) (110) and (111) oriented SrTiO3 (STO) substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

YBa/sub 2/Cu/sub 3/O/sub 7/-/sub x/ junctions and dc SQUIDs have been realized by employing 45/spl deg/ a-axis tilt grain boundaries through a fabrication procedure based on the biepitaxial technique. YBa/sub 2/Cu3O/sub 7-x/ grows mainly oriented [103] on SrTiO/sub 3/ and [001] on the MgO seed layer. A wide characterization of the tilt junctions and SQUID properties has been carried out. High values of the I/sub C/R/sub N/ quality factor and of the magnetic flux-to-voltage transfer parameter have been obtained, The observed phenomenology confirms differences from the one typical of 45/spl deg/ c-axis tilt grain boundary junctions and gives important information on the nature of the current steps appearing at finite voltages in the current-voltage characteristics. These devices could also have some impact on experiments designed to study the symmetry of the order parameter, exploiting their microstructure and anisotropic properties. A maximum speed of Josephson vortices as calculated from the voltage step values, of the order of 2 10/sup 6/ m/sec is obtained, which encourages high frequency applications.

YBa2Cu3O7-x artificial grain boundary Josephson junctions have been fabricated, employing a recently implemented biepitaxial technique. The grain boundaries can be obtained by controlling the orientation of the MgO seed layer and are characterized by a misalignment of the c-axes (45 degrees a-axis tilt or 45 degrees a-axis twist). These types of grain boundaries are still mostly unexplored. We carried out a complete characterization of their transport properties and microstructure. Junctions and de SQUIDs associated with these grain boundaries exhibit an excellent Josephson phenomenology and high values of the ICRN product and of the magnetic flux-to-voltage transfer parameter respectively. Remarkable differences in the transport parameters of tilt and twist junctions have been observed, which can be of interest for several applications. A maximum speed of Josephson vortices as calculated from the voltage step values of the order of 2 x 10(6) m s(-1) is obtained. These devices could also have some impact on experiments designed to study the symmetry of the order parameter, exploiting their microstructure and anisotropic properties. High-resolution electron microscopy showed the presence of perfect basal plane faced boundaries in the cross sections of tilt boundaries.