1. The spin-dependent transport and optoelectronic properties of the 6,6,12-graphyne-based magnetic tunnel junction devices
- Author
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Ruiping Liu, Mao-Yun Di, Lu-Yao Hao, Jin Li, Li-Chun Xu, Zhi Yang, Hui-Fang Bai, and Xuguang Liu
- Subjects
Materials science ,Magnetoresistance ,Spins ,business.industry ,02 engineering and technology ,General Chemistry ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Biomaterials ,Graphyne ,Tunnel magnetoresistance ,Magnetization ,0103 physical sciences ,Electrode ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,010306 general physics ,0210 nano-technology ,business ,Antiparallel (electronics) ,Quantum tunnelling - Abstract
Using density functional theory and nonequilibrium Green's function method, we investigated the spin-dependent transport and spin-polarized optoelectronic properties of the 6,6,12-graphyne-based magnetic tunnel junction (MTJ) devices. The results show that the MTJ devices have prominent dual spin-filtering effect and large tunneling magnetoresistance (TMR); the TMR values of the MTJ devices are as high as 105%. In addition, we found that the spin-polarized photocurrents of the MTJ devices are dependent on the polarization direction of light and the magnetization directions of the electrodes. Two spin-polarized photocurrents can be realized in the MTJ devices and, if the magnetization directions of the two electrodes are antiparallel, the two light-generated spins flow in opposite directions. These interesting phenomena indicate that the 6,6,12-graphyne-based MTJ devices could be used as optoelectronic or opto-spintronic devices.
- Published
- 2018