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The coating of nuclear fuel kernels with pyrolytic carbon (PyC) is a well-understood practice dating back over half a century. In spite of decades of studies related to these coatings, no s...

The effect of a discrete elastic element on the transverse vibration of a Bernoulli–Euler beam has been well-studied; however, the same cannot be said for a beam with a viscous damper. While the former can be analyzed via separation of variables and the solution of the eigenvalue problem, this article presents a method for computing the resonances of the latter case. The nature of a discrete viscous damper's effect on the fundamental frequency of a beam is revealed as the method is applied to the case of a cantilevered beam. In this process, it is shown that damping has the capacity to increase the fundamental frequency of the beam, and that there exists both a particular location and critical value of damping that maximize this frequency.

The knowledge of tribological properties of silicon is important due to its potential application for micromechanical devices. The present work focuses on the friction and wear studies of single crystal silicon (100) implanted with carbon and nitrogen at 60 keV. These tests were performed using a pin-on-disc (POD) apparatus with a 52100 pin, under contact stress of 225 MPa and at 35% relative humidity. Changes in surface roughness before and after the wear tests were studied using atomic force microscopy (AFM). Transmission electron microscopy (TEM) investigations and ion-channeling measurements revealed amorphous phases for all the implanted species at all doses. Although the surface hardness measurements performed by nano-indentation indicated no improvement in surface hardness for samples implanted with carbon, the tribological studies indicated an improvement in wear and frictional properties. We relate this improved wear behavior to the formation of amorphous SiC.

Carbon films with up to 32 at. % of nitrogen have been prepared with ion beam assisted magnetron, using a N2+/N+ beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. EELS, SXS, XPS, and IR studies show that these a-C: N films are mostly graphitic and have up to 20% sp3 bonding. Nitrogen is mostly combined with carbon in nitrile (C ≡ N) and imine (C=N) groups. It is shown by RBS and NDP that density goes through a maximum as the average damage energy per incoming ion increases. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with average damage energy. These results are consistent with a densification induced by the collisions at low average damage energy values and induced graphitization at higher damage energy values. These results are similar to what is observed for Ar ion assisted deposition of a-C films. The mechanical properties of these films have been studied with a nanoindenter, and it was found that the hardness and Young's modulus go through a maximum as the average damage energy is increased. The maximum of mechanical properties corresponds to the minimum in the void concentration in the film. Tribological studies of the a-C: N show that the friction coefficient obtained against diamond under dynamic loading decreases strongly as the nitrogen composition increases, this effect being more pronounced at low loads.

Epitaxial TiN/V0.3Nb0.7N superlattices with a 1.7% lattice mismatch between the layers were grown by reactive magnetron sputtering on MgO(001) substrates. Superlattice structure, crystalline perfection, composition modulation amplitudes, and coherency strains were studied using transmission electron microscopy and x-ray diffraction. Hardness H and elastic modulus were measured by nanoindentation. H increased rapidly with increasing Λ, peaking at H values ≍75% greater than rule-of-mixtures values at Λ ≍ 6 nm, before decreasing slightly with further increases in Λ. A comparison with previously studied lattice-matched TiN/V0.6Nb0.4N superlattices, which had nearly identical composition modulation amplitudes, showed a similar H variation, but a smaller H enhancement of ≍50%. The results suggest that coherency strains, which were larger for the mismatched TiN/V0.3Nb0.7N superlattices, were responsible for the larger hardness enhancement. The results are discussed in terms of coherency strain theories developed for spinodally decomposed materials. Nanoindenter elastic modulus results showed no significant anomalies.

The critical current density {ital J}{sub {ital c}} in Y{sub 0.9}Gd{sub 0.1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} was found to increase relative to the unirradiated value following neutron irradiations in a mixed-spectrum reactor (total neutron fluences ranged between 1{times}10{sup 17} and 2{times}10{sup 18} {ital n}/cm{sup 2}). Additional neutron irradiations of structurally similar GdBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} were carried out in either a highly thermalized or a pure fast-neutron environment (in the same reactor). This was done to determine whether enhancements in {ital J}{sub {ital c}} are to be attributed to defects arising from interactions with thermal neutrons ({ital E}{sub {ital n}}{similar to}0.025 eV) or with fast neutrons ({ital E}{sub {ital n}}{gt}0.1 MeV). Magnetic-hysteresis measurements on these samples indicate that flux pinning (and thereby {ital J}{sub {ital c}}) is enhanced by fast-neutron irradition, but not by thermal-neutron irradiation. On the other hand, the critical temperature {ital T}{sub {ital c}} is significantly altered by exposure both to thermal and fast neutrons. It is proposed that thermal neutrons induce the formation of Frenkel pair defects on the rare-earth sublattice, but that these point defects do not serve as effective flux-pinning centers.

A hybrid process, aerosol-assisted chemical vapor deposotion (AACVD), is described for reproducible preparation of superconducting thin films of YBa 2 Cu 3 O 7−χ . The process consists of atomizing a toluene solution of the Y, Ba, and Cu tetramethylheptanedionato complexes using an aerosol generator. The aerosol is transported into a CVD reactor where solvent and precursor evaporation and deposition occur at atmospheric pressure on heated substrates. The process provides stable evaporation rates for all three precursors, yielding constant film stoichiometry throughout the deposition period and from film to film. Superconducting films may be deposited in-situ at substrate heater temperatures above 825°C, or may be formed at lower temperatures by deposition followed by post-deposition annealing at higher temperatures. The microstructure and quality of films are highly dependent on the conditions employed in deposition and in the case of films deposited below 825°C, the post-deposition annealing conditions. Superconducting films prepared by the AACVD/post-annealing process have a metallic normal state resistivity signature with a zero resistance temperature typically above 88K, and are highly c -axis oriented. Transport critical current densities measured at 75 K on polycrystalline films prepared by the AACVD process are 220 000 A/cm 2 and 84 000 A/cm 2 at self-field and 0.1 T, respectively.

A nonplanar X-band cavity amenable to coating with high-temperature superconducting films by conventional physical vapor deposition processes has been designed, fabricated, and tested. The cavity geometry resembles a symmetric clamshell configuration. It consists of two truncated cones joined at their bases. The specific dimensions of the cavity were calculated using the SUPERFISH computer code. Cavities were constructed using a silver-based alloy, Consil 995. The separate cavity sections were coated with Tl-based high-temperature superconducting material using a two-step deposition and annealing process. The unloaded Q values for this coated clamshell cavity are 66,000 and 105,000 at 77 and 20 K, respectively.

A multi-step process is used to fabricate Tl2Ba2Ca1Cu2O8 films on (100) LaA103 substrates. Submicron thick precursor films of Ba-Ca-Cu-O are rf magnetron sputter deposited from a single target. Film stoichiometry is measured by ion beam backscattering spectroscopy. Deficiencies of the alkaline earths that are found in the precursor films are then compensated for by the addition of appropriate CaF2 and/or BaF2 films onto the surface of the precursor film. Post deposition annealing of the films is then done in an atmosphere of thallium oxide and oxygen in order to form the superconducting phases. The annealed films are examined using x-ray diffraction (XRD), an ac inductance technique, and critical current in an external magnetic field. XRD shows the c-axis length of the superconducting phase to increase as the overall film stoichiometry approaches 2212. The transition widths measured by inductive coupling weakly correlate with 77 K critical current measurements. Our best critical current results are 1.5*106 amps/ cm2 for a film measured at 4 K in an 8 T magnetic field (parallel to the films' c-axis).

Secondary-ion emission has been observed for the liquid phase Ga-In eutectic alloy, and from pure Ga and In targets, under Ne + , Ar + , Kr + , and Xe + bombardment in the energy range of 25–250 keV. The fraction of low-energy sputtered ions originating from beneath the first atomic layer is independent of projectile energy, as expected from the collision-cascade theory of sputtering, but decreases slightly with increasing projectile mass. The relative dimer ion yield from each target is nearly independent of projectile energy and mass. A published statistical recombination theory of neutral dimer formation predicts a proportionality to the sputtering yield, but the discrepancy may be explained if dimers are primarily formed when a single recoil atom causes the correlated ejection of several atoms from a localized region of the surface.