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This article presents an ultra-wideband (UWB). RF receiver that includes a low noise amplifier (LNA) and a single-balanced mixer (SBM). The LNA uses an RC shunt feedback technique for broadening the bandwidth. Besides, an inductor is used as an interstage match at the cascode LNA that efficiently improves the flatness of the cascode LNA. The RC shunt feedback is also applied to the gm stage of mixer for the input impedance match. The low-pass IF load is used to improve the LO/IF isolation of the SBM. The measured results of the UWB RF receiver are a conversion gain of 17.5–19.5 dB, a double side-band noise figure of 5.25–6.89 dB at 100 MHz IF frequency under an LO power of 2 dBm, a minimal 1-dB compression point (P1dB) of −31 dBm, an input third order intercept point of −12 dBm, the isolations among all ports of better than −40 dB. The total power consumption is 29.1 mW. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 232–236, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24879

A simple transformer-coupled injection technique is proposed for a V-band divide-by-three injection-locked frequency divider (ILFD) in 0.18 μm CMOS technology. This technique provides an effective current injection and results in wide locking range of ILFD. The measured frequency range of the ILFD is from 56.5 to 66.4 GHz while varying the tuning voltage Vtune is from 0 to 1.8 V under an injection power of 5 dBm. The DC power dissipation of the core circuit only consumes a current of 3 mA with a single 1 V power supply. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 3169–3172, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23922

A 5.4-mW ultra-low dc power low-noise amplifier (LNA) at 5.5 GHz, based on 0.35-μm BiCMOS technology, is presented. The trade-off between the NF and linearity for LNA circuit design has been investigated. Furthermore, the use of the HBT-cascade-MOS methodology simultaneously satisfies the trade-off between the noise figure (NF) and linearity of the LNA. This amplifier achieves a gain/NF × PDC ratio figure of merit of 0.774 (1/mW), which is the best reported at the 5–6-GHz band, and is suitable for wireless LAN applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 65–68, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21083

We report on a 5.4-mW ultra-low dc-power MOS LNA at 5.2 GHz, which is implemented based on 0.35-μm BiCMOS technology. The small-signal substrate resistance effect on the drain node of the common-source amplifiers is investigated. Also, the use of the floating method improves both the power gain and noise figure (NF) of MOS LNA. This amplifier achieves a Gain/NF × PDC ratio figure of merit of 0.402 (l/mW), which is the best reported at the 5-GHz band and is suitable for 5.2-GHz wireless LAN applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 363–367, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20824

An intrinsic-tuned, 68 GHz voltage controlled oscillator (VCO) without an extra on-chip accumulation-mode metal oxide semiconductor (MOS)-varactor is demonstrated in a standard, 0.13 mum CMOS technology. This VCO exhibits phase noises of -98.4 dBc/Hz and -115.2 dBc/Hz at 1 and 10 MHz offset, respectively, along with a tuning range of 4.5 % even under a small power consumption of 4.32 mW. Besides, the highest figure-of-merit (taking frequency tuning range into account) of -182 dBc/Hz under the 1 MHz offset condition is achieved among all previously reported >60 GHz CMOS-based VCOs, which is attributed to the proposed intrinsic tuning mechanism.