1. MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
- Author
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H. Clement Wann, Kai Chen, Chenming Hu, Ping Keung Ko, Makoto Yoshida, and Jon Dunster
- Subjects
Physics ,Mobility model ,Electron mobility ,Condensed matter physics ,business.industry ,Induced high electron mobility transistor ,Electrical engineering ,Electron ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Gate oxide ,MOSFET ,Materials Chemistry ,Electrical and Electronic Engineering ,business ,AND gate ,Voltage - Abstract
The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field E eff = (ηQ inv + Q b ) ϵ Si has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of Tox, Vt and Vg explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary.
- Published
- 1996
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