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The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant., Comment: 19 pages, 3 figures. arXiv admin note: substantial text overlap with arXiv:2302.13734

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies., Comment: 54 pages, 16 figures, 4 tables

Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy (STM) measurements. Moreover, we demonstrate that its spatial extension increases substantially in magnetic field., Comment: 11 pages, 7 figures