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VS2 and VSe2 have attracted particular attention among the transition metals dichalcogenides because of their promising physical properties concerning magnetic ordering, charge density wave (CDW), emergent superconductivity, etc., which are very sensitive to stoichiometry and dimensionality reduction. Yanson point contact (PC) spectroscopic study reveals metallic and nonmetallic states in VS2 PCs, as well as a magnetic phase transition was detected below 25 K. Analysis of PC spectra of VS2 testifies the realization of the thermal regime in PCs. At the same time, rare PC spectra, where the magnetic phase transition was not visible, shows a broad maximum of around 20 mV, likely connected with electron-phonon interaction (EPI). On the other hand, PC spectra of VSe2 demonstrate metallic behavior, which allowed us to detect features associated with EPI and CDW transition. The Kondo effect appeared for both compounds, apparently due to interlayer vanadium ions. Besides, the resistive switching was observed in PCs on VSe2 between a low resistive, mainly metallic-type state, and a high resistive nonmetallic-type state by applying bias voltage (about 0.4V). In contrast, reverse switching occurs by applying a voltage of opposite polarity (about 0.4V). The reason may be the alteration of stoichiometry in the PC core due to the displacement of V ions to interlayer under a high electric field. The observed resistive switching characterize VSe2 as a potential material, e.g., for non-volatile resistive RAM, neuromorphic engineering, and for other nanoelectronic applications. At the same time, VSe2 attracts attention as a rare layered van der Waals compound with magnetic transition., Comment: 12 pages, 6 figs. Presented on IV International Workshop on Point-Contact Spectroscopy: http://www.ilt.kharkov.ua/pcs2024/

TiSe2 has received much attention among the transition metals chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, emerging of charge density wave (CDW) state, induced superconductivity etc. Here, we report discovery of new feature of TiSe2, namely, observation of resistive switching in voltage biased point contacts (PCs) based on TiSe2 and its derivatives doped by S and Cu (TiSeS, CuxTiSe2). The switching is taking place between a low resistive mainly metallic-type state and a high resistive semiconducting-type state by applying bias voltage (usually below 0.5V), while reverse switching takes place by applying voltage of opposite polarity (usually below 0.5V). The difference in resistance between these two states can reach up to two orders of magnitude at the room temperature. The origin of the effect can be attributed to the variation of stoichiometry in PC core due to drift/displacement of Se/Ti vacancies under high electric field. Additionally, we demonstrated, that heating takes place in PC core, which can facilitate the electric field induced effect. At the same time, we did not found any evidence for CDW spectral features in our PC spectra for TiSe2. The observed resistive switching allows to propose TiSe2 and their derivatives as the promising materials, e.g., for non-volatile resistive random access memory (ReRAM) engineering., Comment: 11 pages, 6 figures

We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive "metallic-type" state, which is the ground state, and a high resistive "semiconducting-type" state by applying certain bias voltage (<1V), while reverse switching takes place by applying voltage of opposite polarity. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies the crystal structure and controls its polarization. In addition to the discovery of the switching effect in PCs, we also suggest a simple method of material testing before functionalizing them, which offers a great advantage in finding suitable novel substances. The new functionality of studied TMTs arising from switchable domains in submicron hetero-structures that are promising, e.g., for non-volatile resistive random access memory (RRAM) engineering., Comment: 8 pages, 4 figs., supplement with 8 figs. V2 some text revision

We carried out point contact (PC) investigation of WTe2 single crystals. We measured Yanson d2V/dI2 PC spectra of the electron-phonon interaction (EPI) in WTe2. The spectra demonstrate a main phonon peak around 8 meV and a shallow second maximum near 16 meV. Their position is in line with the calculation of the EPI spectra of WTe2 in the literature, albeit phonons with higher energy are not resolved in our PC spectra. An additional contribution to the spectra is present above the phonon energy, what may be connected with the peculiar electronic band structure and need to be clarified. We detected tiny superconducting features in d2V/dI2 close to zero bias, which broadens by increasing temperature and blurs above 6K. Thus, (surface) superconductivity may exist in WTe2 with a topologically nontrivial state. We found a broad maximum in dV/dI at large voltages (>200 mV) indicating change of conductivity from metallic to semiconducting type. The latter might be induced by the high current density (~10^8 A/cm^2) in the PC and/or local heating, thus enabling the manipulation of the quantum electronic states at the interface in the PC core., Comment: 4 figs., 11 pages with supplement, will be presented at APS March Meeting, March 4-8, Boston

The method of microcontact spectroscopy is used to study alloys with magnetic impurities CuMn and CuFe in the range of concentrations 0.01-1 at.%. Minima or maxima (so-called zero-bias anomalies) were observed in the microcontact spectra of these alloys at voltages ~ 1 mV. The Lande g-factor for the Mn impurity in a Cu matrix was determined from the splitting of the minimum of the zero-bias anomaly in a magnetic field. The quantitative calculations carried out agree well with theory and permit determining both the important geometric contact parameter i.e., the averaged geometric form factor, and the characteristics of the alloy itself, for example, J/E_F, i.e., the ratio of the magnitude of the exchange interaction energy between an electron and the magnetic impurity to the Fermi energy, from the microcontact spectra., Comment: One of the first observation of the Kondo efect by point-contact spectroscopy (4 two column pages, 4 figures)

Investigation of the electron-phonon interaction (EPI) in LaCuSb2 and La(Cu0.8Ag0.2)Sb2 compounds by Yanson point-contact spectroscopy (PCS) has been carried out. Point-contact spectra display a pronounced broad maximum in the range of 10{\div}20 mV caused by EPI. Variation of the position of this maximum is likely connected with anisotropic phonon spectrum in these layered compounds. The absence of phonon features after the main maximum allows the assessment of the Debye energy of about 40 meV. The EPI constant for the LaCuSb2 compound was estimated to be {\lambda}=0.2+/-0.03. A zero-bias minimum in differential resistance for the latter compound is observed for some point contacts, which vanishes at about 6 K, pointing to the formation of superconducting phase under point contact, while superconducting critical temperature of the bulk sample is only 1K., Comment: 4 two-column pages, 5 figures, published in the "Proceedings of the 2017 IEEE 7-th International Conference on Nanomaterials: Applications & Properties", September 10-15, 2017, Zatoka, Ukraine

Nonlinear current-voltage characteristics and magnetoresistance of point contacts between a normal metal (N) and films of amorphous ferromagnet (F) Co40Fe40B20 of different thickness, exchange-biased by antiferromagnetic Mn80Ir20 are studied. A surface spin valve effect in the conductance of such F-N contacts is observed. The effect of exchange bias is found to be inversely proportional to the Co40Fe40B20 film thickness. This behavior as well as other magneto-transport effects we observe on single exchange-pinned ferromagnetic films are similar in nature to those found in conventional three-layer spin-valves., Comment: 11 pages, 6 figs, accepted to journal "Low Temperature Physics" (Fizika Nizkikh Temperatur) and will be presented at III International Workshop on Point-Contact Spectroscopy (8-11 sept. 2014, Kharkiv)

An asymmetry as a function of the direction of current flow is observed in the current-voltage characteristic (CVC) and its first and second derivatives for point heterocontacts between pure metals {Cu, Ni, Fe) as well as between these metals and dilute alloys (CuFe, CuMn). It is shown that the observed asymmetry is caused by thermoelectrical phenomena (Seebeck, Peltier, and Thompson effects), observed when the temperature inside the contact differs from the temperature of the bath. In the low energy range (less than or of the order of the Debye energy) the asymmetry of the CVC is affected mainly by the Seebeck effect, while at high energies and for larger contacts (lower resistance) the contributions of all noted effects are of the same order of magnitude. A technique is proposed for determining the temperature of a heterocontact by measuring the CVC in two polarities. It is established that in the intermediate (between the diffusion and ballistic) state of flight of the electrons through the constriction the temperature of the heterocontact increases linearly with the voltage on it, and all the more rapidly the larger the contact and the more impurity in it., Comment: 5 pages, 8 figs. It is shown that even in the spectroscopic regime (ballistic or diffusion) temperature in point contact rises with a voltage

We present a study of the influence of an external magnetic field H and an electric current I on the spin-valve (SV) effect between a ferromagnetic thin film (F) and a sharp tip of a nonmagnetic metal (N). To explain our observations, we propose a model of a local surface SV which is formed in such a N/F contact. In this model, a ferromagnetic cluster at the N/F interface plays the role of the free layer in this SV. This cluster exhibits a larger coercive field than the bulk of the ferromagnetic film, presumably due to its nanoscale nature. Finally, we construct a magnetic state diagram of the surface SV as a function of I and H., Comment: 7 pages and 5 figs. in pdf file, final version is published in Fiz. Nizk. Temp. with free access after registration: http://fnte.ilt.kharkov.ua/main.php?page=10

Point contacts between high anisotropy ferromagnetic SmCo5 and normal metal Cu are used to achieve a strong spin-population inversion in the contact core. Subjected to microwave irradiation in resonance with the Zeeman splitting in Cu, the inverted spin-population relaxes through stimulated spin-flip photon emission, detected as peaks in the point contact resistance. Resonant spin-flip photon absorption is detected as resistance minima, corresponding to sourcing the photon field energy into the electrical circuit. These results demonstrate fundamental mechanisms that are potentially useful for designing metallic spin-based lasers., Comment: 11 pages, 5 figs

We propose to use a point contact between a ferromagnetic and a normal metal in the presence of a magnetic field for creating a large inverted spin-population of hot electrons in the contact core. The key point of the proposal is that when these hot electrons relax by flipping their spin, microwave photons are emitted, with a frequency tunable by the applied magnetic field. While point contacts is an established technology their use as a photon source is a new and potentially very useful application. We show that this photon emission process can be detected by means of transport spectroscopy and demonstrate stimulated emission of radiation in the 10-100 GHz range for a model point contact system using a minority-spin ferromagnetic injector. These results can potentially lead to new types of lasers based on spin injection in metals., Comment: 6 pages, 3 figures, accepted for publication in New Journal of Physics, accepted for oral presentation at OPTO SPIE Photonics West Conference, 22-27 January 2011. San Francisco, USA

Hysteretic magneto-resistance of point contacts formed between non-magnetic tips and single ferromagnetic films exchange-pinned by antiferromagnetic films is investigated. The analysis of the measured current driven and field driven hysteresis agrees with the recently proposed model of the surface spin-valve, where the spin orientation at the interface can be different from that in the bulk of the film. The switching in magneto-resistance at low fields is observed to depend significantly on the direction of the exchange pinning, which allows identifying this transition as a reversal of interior spins of the pinned ferromagnetic films. The switching at higher fields is thus due to a spin reversal in the point contact core, at the top surface of the ferromagnet, and does not exhibit any clear field offset when the exchange-pinning direction or the magnetic field direction is varied. This magnitude of the switching field of the surface spins varies substantially from contact to contact and sometimes from sweep to sweep, which suggests that the surface coercivity can change under very high current densities and/or due to the particular microstructure of the point contact. In contrast, no changes in the effect of the exchange biasing on the interior spins are observed at high currents, possibly due to the rapid drop in the current density away from nanometer sized point contact cores., Comment: 3 pages, 3 figs, presented on 11th Joint MMM-Intermag Conference, Jan. 18-22, 2010, Washington, USA

Point contacts between normal and ferromagnetic metals are investigated using magneto-resistance and transport spectroscopy measurements combined with micromagnetic simulations. Pronounced hysteresis in the point-contact resistance versus both bias current and external magnetic field are observed. It is found that such hysteretic resistance can exhibit, in addition to bi-stable resistance states found in ordinary spin valves, tri-stable resistance states with a middle resistance level. We interpret these observation in terms of surface spin-valve and spin-vortex states, originating from a substantially modified spin structure at the ferromagnetic interface in contact core. We argue that these surface spin states, subject to a weakened exchange interaction, dominate the effects of spin transfer torques on the nanometer scale., Comment: 4 pages, 5 Figs. accepted for publ. in J. Phys.: Cond. Mat., for additional exp. data see also: arXiv:0907.2027

Point-contacts (PC) offer a simple way to create high current densities, 10^9 A/cm^2 and beyond, without substantial Joule heating. We have shown recently (Nano Letters, 7 (2007) 927) that conductivity of nanosized PCs between a normal and ferromagnetic metals exhibits bi-stable hysteretic states versus both bias current and external magnetic field - the effect typical for spin-valve structures. Here we report that apart from the bi-stable state a third intermediate-resistance state is occasionally observed. We interpret this state as due to a spin-vortex in the PC, nucleated either by Oersted field of the bias current and/or by the circular geometry of PC. The observed three-level-states in the PC conductivity testify that the interface spins are both weakly coupled to the spins in the bulk and have depressed exchange interaction within the surface layer., Comment: 4 pgs., 4 figs. submitted to ICM-09 (July 26-21, Karlsruhe) V2: corrected typos, accepted for publication in J. Phys.: Conf. Series

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic., Comment: 14 pages

We report an observation of spin-valve like hysteresis within a few atomic layers at a ferromagnetic interface. We use phonon spectroscopy of nanometer sized point contacts as an in-situ probe to study the mechanism of the effect. Distinct in energy phonon peaks for contacts with dissimilar nonmagnetic outer electrodes allow to localize the observed spin switching to the top or bottom interfaces for nanometer thin ferromagnetic layers. The mechanism consistent with our data is energetically distinct atomically thin surface spin layers that can form current or field driven surface spin-valves within a single ferromagnetic film., Comment: 5 pages, 4 figs, to be published in Nano Letters

Phonon spectroscopy is used to investigate the mechanism of current-induced spin torques in nonmagnetic/ferromagnetic (N/F) point contacts. Magnetization excitations observed in the magneto-conductance of the point contacts are pronounced for diffusive and thermal contacts, where the electrons experience significant scattering in the contact region. We find no magnetic excitations in highly ballistic contacts. Our results show that impurity scattering at the N/F interface is the origin of the new single-interface spin torque effect., Comment: 4 pages, 5 figs., accepted for publication in PRL

We have observed at low temperatures (<8K) hysteretic I(V) characteristics for sub-mkm (~200nm) metallic break-junctions based on the heavy-fermion compound UPd2Al3. Degrading the quality of the contacts by in situ increasing the local residual resistivity or temperature rise reduces the hysteresis. We demonstrate that those hysteretic I(V) curves can be reproduced theoretically by assuming the constriction to be in the thermal regime. Our calculations show that such anomalous I(V) curves are due to the sharp increase of \rho(T) of UPd2Al3 near the Neel temperature T_N ~ 14K. From this point of view each metal with similar \rho(T) should produce similar hysteretic I(V) curves. As example we show calculations for the rare-earth manganite La{0.75}Sr{0.25}MnO3, a system with colossal magnetoresistance. In this way we demonstrate that nano-sized point contacts can be non-linear devices with N-shaped I(V) characteristics, i. e. with negative differential resistance, that could serve like Esaki tunnel diodes or Gunn diodes as amplifiers, generators, and switching units. Their characteristic response time is estimated to be less than 1ns for the investigated contacts., Comment: 4 pages, 2 figs, presented on NATO ARW “Nanoscale Devices – Fundamentals and Applications” (18-22 Sept. 2004, Kishinev, Moldova)

We have investigated metallic break junctions of the heavy-fermion compound UPd2Al3 at low temperatures between 0.1K and 9K and in magnetic fields up to 8T. Both the current-voltage I(V) characteristics and the dV/dI (V) spectra clearly showed the superconducting ($T_{\rm c}\simeq$ 1.8K) as well as the antiferromagnetic ($T_{\rm N}\simeq$14K) transition at low temperatures when the bias voltage is raised. The junctions with lateral size of order 200nm had huge critical current densities around $5\times 10^{10} A/m^2 at the antiferromagnetic transition and hysteretic I(V) characteristics. Degrading the quality of the contacts by in situ increasing the local residual resistivity reduced the hysteresis. We show that those hysteretic I(V) curves can be reproduced theoretically by assuming the constriction to be in the thermal regime. It turns out that these point contacts represent non-linear devices with N-shaped I(V) characteristics that have a negative differential resistance like an Esaki tunnel diode., Comment: 12 pages, 7 figs