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We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results validate the theoretical predictions that the manipulation of Bi(110) surface atom buckling can control the topological phase transition. Notably, we have observed robust unreconstructed edge states at the edges of both 3-bilayer (BL) and 4-BL Bi(110) films, with the 4-BL film displaying stronger edge state intensity and a smaller degree of atomic buckling. First-principle calculations further substantiate these findings, demonstrating a gradual reduction in buckling as the film thickness increases, with average height differences between two Bi atoms of approximately 0.19 {\AA}, 0.10 {\AA}, 0.05 {\AA}, and 0.00 {\AA} for the 1-BL, 2-BL, 3-BL, and 4-BL Bi(110) films, respectively. When Bi films are larger than 2 layers, the system changes from a trivial to a non-trivial phase. This research sets the stage for the controlled realization of topological superconductors through the superconducting proximity effect, providing a significant platform for investigating Majorana zero modes and fabricating quantum devices.

A two-dimensional quantum spin Hall insulator exhibits one-dimensional gapless spin-filtered edge channels allowing for dissipationless transport of charge and spin. However, the sophisticated fabrication requirement of two-dimensional materials and the low capacity of one-dimensional channels hinder the broadening applications. We introduce a method to manipulate a three-dimensional topological material to host a large number of one-dimensional topological edge channels utilizing surface anisotropy. Taking ZrTe5 as a model system, we realize a highly anisotropic surface due to the synergistic effect of the lattice geometry and Coulomb interaction, and achieve massive one-dimensional topological edge channels -- confirmed by electronic characterization using angle-resolved photoemission spectroscopy, in combination with first-principles calculations. Our work provides a new avenue to engineer the topological properties of three-dimensional materials through nanoscale tunning of surface morphology and opens up a promising prospect for the development of low-power-consumption electronic nano devices based on one-dimensional topological edge channels.

Spin current generation and manipulation remain the key challenge of spintronics, in which relativistic spinorbit coupling (SOC) play a ubiquitous role. In this letter, we demonstrate that hidden Rashba spins in the non-magnetic, centrosymmetric lattice of multilayer SnSe2 can be efficiently activated by spin-orbit scattering introduced by Se vacancies. Via vacancy scattering, conduction electrons with hidden spin-momentum locked polarizations acquire out-of-plane magnetization components, which effectively break the chiral symmetry between the two Se sublattices of an SnSe2 monolayer when electron spins start precession in the strong built-in Rashba SOC field. The resulting spin separations are manifested in quantum transport as vacancy concentrationand temperature-dependent crossovers from weak antilocalization (WAL) to weak localization (WL), with the distinctive spin relaxation mechanism of the Dyakonov-Perel type. Our study shows the great potential of twodimensional systems with hidden-spin textures for spintronics.

Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moire superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer alpha-In2Se3 and bilayer InSe. For bilayer alpha-In2Se3, we show that a twist angle -13.2 degree is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle -1.1 degree. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way towards engineering such flat bands in a large family of 2D materials.

The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored. Here, using angle- and temperature-dependent tunnelling magnetoresistance, we report unprecedented metamagnetic phase transitions in atomically-thin CrOCl, triggered by magnetic easy-axis flipping instead of the conventional spin flop mechanism. Few-layer CrOCl tunnelling devices of various thicknesses consistently show an in-plane antiferromagnetic (AFM) ground state with the easy axis aligned along the Cr-O-Cr direction (b-axis). Strikingly, with the presence of a magnetic field perpendicular to the easy-axis (H||c), magnetization of CrOCl does not follow the prevalent spin rotation and saturation pattern, but rather exhibits an easy-axis flipping from the in-plane to out-of-plane directions. Such magnetic anisotropy controlled metamagnetic phase transitions are manifested by a drastic upturn in tun- nelling current, which shows anomalous shifts towards higher H when temperature increases. By 2D mapping of tunnelling currents as a function of both temperature and H, we determine a unique ferrimagnetic state with a superstructure periodicity of five unit cells after the field-induced metam- agnetic transitions. The feasibility to control 2D magnetism by manipulating magnetic anisotropy may open enormous opportunities in spin-based device applications., Comment: 7 pages, 4 figures

Exciting phenomena may emerge in non-centrosymmetric two-dimensional (2D) electronic systems when spin-orbit coupling (SOC) interplays dynamically with Coulomb interactions, band topology, and external modulating forces, etc. Here, we report illuminating synergetic effects between SOC and Stark in centrosymmetric few-layer black arsenic (BAs), manifested as giant Rashba valley splitting and exotic quantum Hall states (QHS) reversibly controlled by electrostatic gating. The unusual finding is rooted in the puckering square lattice of BAs, in which heavy $4p$ orbitals form highly asymmetric $\Gamma$ valley with the $p_{z}$ symmetry and $D$ valleys of the $p_{x}$ origin, located at the Brillouin zone (BZ) center and near the time reversal invariant momenta of $X$, respectively. When the structure inversion symmetry is broken by perpendicular electric field, giant Rashba SOC is activated for the $p_{x}$ bands to produce strong spin-polarized $D^{+}$ and $D^{-}$ valleys related by time-reversal symmetry, coexisting with weak $\Gamma$ Rashba bands constrained by the $p_{z}$ symmetry. Intriguingly, strong Stark effect shows the same $p_{x}$-orbital selectiveness for $D$, collectively shifting the valence band maximum of $D^{\pm}$ valleys to exceed the $\Gamma$ pockets. Such an orchestrating effect between SOC and Stark allows us to realize gate-tunable spin valley manipulations for 2D hole gas, as revealed by unconventional magnetic field triggered even-to-odd transitions in QHS. For electron doping, the quantization of the $\Gamma$ Rashba bands is characterized by peculiar density-dependent transitions in band topology from two parabolic valleys to a unique inner-outer helical structure when charge carrier concentrations increase., Comment: 9 pages, 4 figures

Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and negative capacitors, making ultralow energy consumption electronic devises possible. With the recent development in low dimensional ferroelectric materials, emerging 2D out-of-plane ferroelectric materials like MoTe2 have great potential for future development. Despite previous phenomenological studies, the underlying microscopic origin of ferroelectricity is still missing. Here, using density functional theory and Wannier function methods, we reveal that the origin of ferroelectricity of these transition metal dichalcogenides comes from the Jahn taller effect and followed by a covalent bonding between transition metal atoms. Moreover, the atypical electronic behavior of these monolayer AB2 (A=Cr, Mo, W; B=S, Se, Te) TMDs compare to traditional improper ferroelectrics hints a strong electronic origin of the polarization, suitable for future industrial applications., Comment: 19 pages, 5 figures

2D materials with nontrivial energy bands are highly desirable for exploring various topological phases of matter, as low dimensionality opens unprecedented opportunities for manipulating the quantum states. Here, it is reported that monolayer (ML) dialkali-metal monoxides, in the well-known 2H-MoS$_2$ type lattice, host multiple symmetry-protected topological phases with emergent fermions, which can be effectively tuned by strain engineering. Based on first-principles calculations, it is found that in the equilibrium state, ML Na$_2$O is a 2D double Weyl semimetal, while ML K$_2$O is a 2D pseudospin-1 metal. These exotic topological states exhibit a range of fascinating effects, including universal optical absorbance, super Klein tunneling, and super collimation effect. By introducing biaxial or uniaxial strain, a series of quantum phase transitions between 2D double Weyl semimetal, 2D Dirac semimetal, 2D pseudospin-1 metal, and semiconductor phases can be realized. The results suggest monolayer dialkali-metal monoxides as a promising platform to explore fascinating physical phenomena associated with novel 2D emergent fermions., Comment: 7 pages, 4 figures

The discovery of archetypal two-dimensional (2D) materials provides enormous opportunities in both fundamental breakthroughs and device applications, as evident by the research booming in graphene, atomically thin transition-metal chalcogenides, and few-layer black phosphorous in the past decade. Here, we report a new, large family of semiconducting dialkali-metal monochalcogenides (DMMCs) with an inherent A$_{2}$X monolayer structure, in which two alkali sub-monolayers form hexagonal close packing and sandwich the triangular chalcogen atomic plane. Such unique lattice structure leads to extraordinary physical properties, such as good dynamical and thermal stability, visible to near-infrared light energy gap, high electron mobility (e.g. $1.87\times10^{4}$ cm$^{2}$V$^{-1}$S$^{-1}$ in K$_{2}$O). Most strikingly, DMMC monolayers (MLs) host extended van Hove singularities near the valence band (VB) edge, which can be readily accessed by moderate hole doping of $\sim1.0\times10^{13}$ cm$^{-2}$. Once the critical points are reached, DMMC MLs undergo spontaneous ferromagnetic transition when the top VBs become fully spin-polarized by strong exchange interactions. Such gate tunable magnetism in DMMC MLs are promising for exploring novel device concepts in spintronics, electronics and optoelectronics., Comment: 18 pages, 4 figures, and 1 table

A nodal loop is formed by band crossing along a one-dimensional closed manifold, with each point on the loop a linear nodal point in the transverse dimensions and can be classified as type-I or type-II depending on the band dispersion. Here, we propose a class of nodal loops composed of both type-I and type-II points, which are hence termed as hybrid nodal loops. Based on firstprinciples calculations, we predict the realization of such loops in the existing electride material Ca2As. For a hybrid loop, the Fermi surface consists of coexisting electron and hole pockets that touch at isolated points for an extended range of Fermi energies, without the need for fine-tuning. This leads to unconventional magnetic responses, including the zero-field magnetic breakdown and the momentum space Klein tunneling observable in the magnetic quantum oscillations, as well as the peculiar anisotropy in the cyclotron resonance., Comment: 5 pages, 4 figures

Effective gravity and gauge fields are emergent properties intrinsic for low-energy quasiparticles in topological semimetals. Here, taking two Dirac semimetals as examples, we demonstrate that applied lattice strain can generate warped spacetime, with fascinating analogues in astrophysics. Particularly, we study the possibility of simulating black-hole/white-hole event horizons and gravitational lensing effect. Furthermore, we discover strain-induced topological phase transitions, both in the bulk materials and in their thin films. Especially in thin films, the transition between the quantum spin Hall and the trivial insulating phases can be achieved by a small strain, naturally leading to the proposition of a novel piezo-topological transistor device. Possible experimental realizations and analogue of Hawking radiation effect are discussed. Our result bridges multiple disciplines, revealing topological semimetals as a unique table-top platform for exploring interesting phenomena in astrophysics and general relativity; it also suggests realistic materials and methods to achieve controlled topological phase transitions with great potential for device applications., Comment: 29 pages,6 figures