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We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.

n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights., Comment: 5 pages, 5 figures

We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the overall back gate capacitive coupling. Most interestingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the lateral graphene side gates, giving rise to an unconventional negative quantum capacitance. The emerging non-linear capacitive couplings are investigated in detail. The experimentally relevant relative lever arm, the ratio between the coupling of the different gate structures, is discussed., Comment: 8 pages, 6 figures

Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse thermoelectrics can achieve arbitrarily large temperature differences in a single leg even with inferior ZT by being geometrically tapered. We introduce a band-engineered transverse thermoelectric with p-type Seebeck in one direction and n-type orthogonal, resulting in off-diagonal terms that drive heat flow transverse to electrical current. Such materials are advantageous for microscale devices and cryogenic temperatures -- exactly the regimes where standard longitudinal thermoelectrics fail. InAs/GaSb type II superlattices are shown to have the appropriate band structure for use as a transverse thermoelectric., Comment: 5 pages, 3 figures

This paper details a complete formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for the AlAs quantum well case. A standardized rotation matrix is defined to transform from the conventional- cubic-cell basis to the quantum-well-transport basis whereby effective mass tensors, valley vectors, strain matrices, anisotropic strain ratios, and scattering vectors are all defined in their respective bases. The specific cases of (001)-, (110)-, and (111)-oriented aluminum arsenide (AlAs) quantum wells are examined, as is the unconventional (411) facet, which is of particular importance in AlAs literature. Calculations of electron confinement and strain in the (001), (110), and (411) facets determine the critical well width for crossover from double- to single-valley degeneracy in each system. The notation is generalized to include miscut angles, and can be adapted to other multi-valley systems. To help classify anisotropic inter-valley scattering events, a new primitive unit cell is defined in momentum space which allows one to distinguish purely in-plane inter-valley scattering events from those that requires an out-of-plane momentum scattering component., Comment: 17 pages, 4 figures, 2 tables

We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 \AA wide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths $W$ greater than 53 \AA. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X-valley of AlAs.