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Tailoring the losses of optical systems within the frame of non-Hermitian physics has appeared very fruitful in the last few years. In particular, the description of exceptional points (EPs) with coupled resonators have become widespread. The on-chip realization of these functionalities is highly significant for integrated nanophotonics, but requires fine control techniques of the nanodevice properties. Here, we demonstrate pump-controlled directional emission of two coupled nanolasers that distantly interact via an integrated waveguide. This coupling scheme unusually enables both frequency- and loss-couplings between two cavities, which can be advantageously exploited to reach EPs by either detuning the cavities or controlling the gain of nanolasers. The system can be readily reconfigured from bidirectional to unidirectional emission by adjusting the pump power.

The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes for distances much longer than their wavelength. Here we present experimental evidence that optical nonlinearities in doped semiconductors are due to free-electron and their efficiency could exceed by several orders of magnitude that of conventional dielectric nonlinearities. Our experimental findings are supported by comprehensive computational results based on the hydrodynamic modeling, which naturally includes nonlocal effects, of the free-electron dynamics in heavily doped semiconductors. By studying third-harmonic generation from plasmonic nanoantenna arrays made out of heavily n-doped InGaAs with increasing levels of free-carrier density, we discriminate between hydrodynamic and dielectric nonlinearities. As a result, the value of maximum nonlinear efficiency as well as its spectral location can now be controlled by tuning the doping level. Having employed the common material platform InGaAs/InP that supports integrated waveguides, our findings pave the way for future exploitation of plasmonic nonlinearities in all-semiconductor photonic integrated circuits.

Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrate bi-directional on-chip conversion between microwave and optical frequencies, realized by piezoelectric actuation of a Gigahertz-frequency optomechanical resonator. The large optomechanical coupling and the suppression of two-photon absorption in the material allows us to operate the device at optomechanical cooperativities greatly exceeding one. Alternatively, when using a pulsed upconversion pump, we demonstrate that we induce less than one thermal noise phonon. We include a high-impedance on-chip matching resonator to mediate the mechanical load with the 50-Ohm source. Our results establish gallium phosphide as a versatile platform for ultra-low-noise conversion of photons between microwave and optical frequencies.

Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric optomechanical devices, that are then coupled to microwave circuits. Optical absorption, low quality factors and other challenges have up to now prevented operation in the quantum regime, however. Here, we design and characterize such a piezoelectric optomechanical device fabricated from gallium phosphide in which a 2.9~GHz mechanical mode is coupled to a high quality factor optical resonator in the telecom band. The large electronic bandgap and the resulting low optical absorption of this new material, on par with devices fabricated from silicon, allows us to demonstrate quantum behavior of the structure. This not only opens the way for realizing noise-free quantum transduction between microwaves and optics, but in principle also from various color centers with optical transitions in the near visible to the telecom band., Comment: 8 pages, 5 figures

Single photon superradiance is a strong enhancement of spontaneous emission appearing when a single excitation is shared between a large number of two-level systems. This enhanced rate can be accompanied by a shift of the emission frequency, the cooperative Lamb shift, issued from the exchange of virtual photons between the emitters. In this work we present a semiconductor optoelectronic device allowing the observation of these two phenomena at room temperature. We demonstrate experimentally and theoretically that plasma oscillations in spatially separated quantum wells interact through real and virtual photon exchange. This gives rise to a superradiant mode displaying a large cooperative Lamb shift.

We study the incandescence of a semiconductor system characterized by a radiatively broadened material excitation. We show that the shape of the emission spectrum and the peak emissivity value are determined by the ratio between radiative and non-radiative relaxation rates of the material mode. Our system is a heavily doped quantum well, exhibiting a collective bright electronic excitation in the mid-infrared. The spontaneous emission rate of this collective mode strongly depends on the emission direction and, uncommonly for a solid-state system, can dominate non-radiative scattering processes. Consequently the incandescence spectrum undergoes strong modifications when the detection angle is varied. Incandescence is modelled solving quantum Langevin equations, including a microscopic description of the collective excitations, decaying into electronic and photonic baths. We demonstrate that the emissivity reaches unity value for a well-defined direction and presents an angular radiative pattern which is very different from that of an oscillating dipole.

Multi-cavity photonic systems, known as photonic molecules (PMs), are ideal multi-well potential building blocks for advanced quantum and nonlinear optics. A key phenomenon arising in double well potentials is the spontaneous breaking of the inversion symmetry, i.e. a transition from a delocalized to two localized states in the wells, which are mirror images of each other. Although few theoretical studies have addressed mirror-symmetry breaking in micro and nanophotonic systems, no experimental evidence has been reported to date. Thanks to the potential barrier engineering implemented here, we demonstrate spontaneous mirror-symmetry breaking through a pitchfork bifurcation in a PM composed of two coupled photonic crystal nanolasers. Coexistence of localized states is shown by switching them with short pulses. This offers exciting prospects for the realization of ultra-compact, integrated, scalable optical flip-flops based on spontaneous symmetry breaking. Furthermore, we predict such transitions with few intracavity photons for future devices with strong quantum correlations.

In this work we investigate a low dimensional semiconductor system, in which the light-matter interaction is enhanced by the cooperative behavior of a large number of dipolar oscillators, at different frequencies, mutually phase locked by Coulomb interaction. We experimentally and theoretically demonstrate that, owing to this phenomenon, the optical response of a semiconductor quantum well with several occupied subbands is a single sharp resonance, associated to the excitation of a bright multisubband plasmon. This effect illustrates how the whole oscillator strength of a two-dimensional system can be concentrated into a single resonance independently from the shape of the confining potential. When this cooperative excitation is tuned in resonance with a cavity mode, their coupling strength can be increased monotonically with the electronic density, allowing the achievement of the ultra-strong coupling regime up to room temperature.