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Superconducting nanowire single-photon detectors (SNSPDs) are indispensable in fields such as quantum science and technology, astronomy, and biomedical imaging, where high detection efficiency, low dark count rates and high timing accuracy are required. Recently, helium (He) ion irradiation was shown to be a promising method to enhance SNSPD performance. Here, we study how changes in the underlying superconducting NbTiN film and the SiO2/Si substrate affect device performance. While irradiated and unirradiated NbTiN films show similar crystallinity, we observe He bubble formation below the SiO2/Si interface and an amorphization of the Si substrate. Both reduce the thermal conductance between the superconducting thin film and the substrate from 210 W/m^2/K^4 to 70 W/m^2/K^4 after irradiation with 2000 ions/nm^2. This effect, combined with the lateral straggle of He ions in the substrate, allows the modification of the superconductor-to-substrate thermal conductance of an SNSPD by selectively irradiating the regions around the nanowire. With this approach, we achieved an increased plateau width of saturating intrinsic detection efficiency of 9.8 uA compared to 3.7 uA after full irradiation. Moreover, the critical current remained similar to that of the unirradiated reference device (59 uA versus 60.1 uA), while full irradiation reduced it to 22.4 uA. Our results suggest that the irradiation-induced reduction of the thermal conductance significantly enhances SNSPD sensitivity, offering a novel approach to locally engineer substrate properties for improved detector performance., Comment: 18 pages, 11 figures

Controlling electron dynamics at optical clock rates is a fundamental challenge in lightwave-driven nanoelectronics. Here, we demonstrate ultrafast charge-state manipulation of individual selenium vacancies in monolayer and bilayer tungsten diselenide (WSe$_2$) using picosecond terahertz (THz) source pulses, focused onto the picocavity of a scanning tunneling microscope (STM). Using THz pump--THz probe time-domain sampling of the defect charge population, we capture atomic-scale snapshots of the transient Coulomb blockade, a signature of charge transport via quantized defect states. We identify back tunneling of localized charges to the tip electrode as a key challenge for lightwave-driven STM when probing electronic states with charge-state lifetimes exceeding the pulse duration. However, we show that back tunneling can be mitigated by the Franck-Condon blockade, which limits accessible vibronic transitions and promotes unidirectional charge transport. Our rate equation model accurately reproduces the time-dependent tunneling process across the different coupling regimes. This work builds on recent progress in imaging coherent lattice and quasiparticle dynamics with lightwave-driven STM and opens new avenues for exploring ultrafast charge dynamics in low-dimensional materials, advancing the development of lightwave-driven nanoscale electronics.

Heterostructures made from 2D transition-metal dichalcogenides are known as ideal platforms to explore excitonic phenomena ranging from correlated moir\'e excitons to degenerate interlayer exciton ensembles. So far, it is assumed that the atomic reconstruction appearing in some of the heterostructures gives rise to a dominating localization of the exciton states. We demonstrate that excitonic states in reconstructed MoSe$_2$/WSe$_2$ heterostructures can extend well beyond the moir\'e periodicity of the investigated heterostructures. The results are based on real-space calculations yielding a lateral potential map for interlayer excitons within the strain-relaxed heterostructures and corresponding real-space excitonic wavefunctions. We combine the theoretical results with cryogenic photoluminescence experiments, which support the computed level structure and relaxation characteristics of the interlayer excitons.

The implementation of a monolithic fiber-optically coupled CMOS-based TemCam-XF416 camera into our ultra-high vacuum (UHV) ultrafast reflection high-energy electron diffraction setup is reported. A combination of a pumpable gate valve and a self-built cooling collar allows UHV conditions to be reached without the need to remove the heat-sensitive device. The water-cooled collar is mounted to the camera housing and prevents heating of the detector upon bake-out of the UHV chamber. The TemCam provides an one order of magnitude higher spatial resolution than the previously used microchannel plate (MCP) based detector (Burle Chevron 3040FM) which enables a 30% higher resolution in reciprocal space. The low background intensity and the 4$\times$ lager dynamic range enables analysis of the diffuse intensity of the diffraction pattern like Kikuchi lines and bands. A key advantage over the previous MCP detector is the complete absence of the blooming effect, which enables the quantitative spot profile analysis of the diffraction spots. The inherent light sensitivity in an optical pump experiment can be overcome by using photons with h{\nu} < 1.12 eV, i.e., the indirect band gap of silicon, or by shielding any stray light., Comment: 7 pages, 6 figures. arXiv admin note: text overlap with arXiv:2311.10010

Layered van der Waals (vdW) materials have emerged as a promising platform for nanophotonics due to large refractive indexes and giant optical anisotropy. Unlike conventional dielectrics and semiconductors, the absence of covalent bonds between layers allows for novel degrees of freedom in designing optically resonant nanophotonic structures down to the atomic scale, from the precise stacking of vertical heterostructures to controlling the twist angle between crystallographic axes. Specifically, while transition metal dichalcogenides monolayers exhibit giant second order nonlinear responses, their bulk counterparts with 2H stacking have zero second order response. In this work, we show second harmonic generation (SHG) arising from the interface of WS$_2$/MoS$_2$ hetero-bilayer thin films with an additional SHG enhancement in nanostructured optical antennas mediated by both the excitonic resonances and the anapole condition. When both conditions are met, we observe up to $10^2$ SHG signal enhancement. Our results highlights vdW materials as a platform for designing unique multilayer optical nanostructures and metamaterial, paving the way for advanced applications in nanophotonics and nonlinear optics., Comment: Manuscript + Supplementary (21 pages, 3 Main figures 8 supplementary figures)

In the strong-coupling regime, the interaction between light and matter reaches a hybridization state where the photonic and material components become inseparably linked. Using tailored states of light to break symmetries in such systems can underpin the development of novel non-equilibrium quantum materials. Chiral optical cavities offer a promising way for this, enabling either temporal or spatial symmetry-breaking, both of which are unachievable with conventional mirror cavities. For spatial symmetry-breaking a cavity needs to discriminate the handedness of circularly polarized light, a functionality that can only be achieved with metamaterials. Here, we suggest and demonstrate experimentally a chiral transition metal dichalcogenide (TMDC) metasurface with broken out-of-plane symmetry, allowing for a selective formation of self-hybridized exciton-polaritons with specific chirality. Our metasurface cavity maintains maximum chirality for oblique incidence up to 20{\deg}, significantly outperforming all previously known designs, thereby turning the angle of incidence from a constraint to a new degree of freedom for sub-nanometer precise control of resonance wavelengths. Moreover, we study the chiral strong-coupling regime in nonlinear experiments and show the polariton-driven nature of chiral third-harmonic generation. Our results demonstrate a clear pathway towards novel quantum material engineering with implications in a wide range of photonics research, such as superconductivity and valleytronics., Comment: 34 pages, 4 figures, and 12 supporting figures

Understanding and controlling the photoexcited quasiparticle (QP) dynamics in monolayer transition metal dichalcogenides lays the foundation for exploring the strongly interacting, non-equilibrium 2D quasiparticle and polaritonic states in these quantum materials and for harnessing the properties emerging from these states for optoelectronic applications. In this study, scanning tunneling microscopy/spectroscopy with light illumination at the tunneling junction is performed to investigate the QP dynamics in monolayer MoS$_2$ on an Au(111) substrate with nanoscale corrugations. The corrugations on the surface of the substrate induce nanoscale local strain in the overlaying monolayer MoS$_2$ single crystal, which result in energetically favorable spatial regions where photoexcited QPs, including excitons, trions, and electron-hole plasmas, accumulate. These strained regions exhibit pronounced electronic bandstructure renormalization as a function of the photoexcitation wavelength and intensity as well as the strain gradient, implying strong interplay among nanoscale structures, strain, and photoexcited QPs. In conjunction with the experimental work, we construct a theoretical framework that integrates non-uniform nanoscale strain into the electronic bandstructure of a monolayer MoS$_2$ lattice using a tight-binding approach combined with first-principle calculations. This methodology enables better understanding of the experimental observation of photoexcited QP localization in the nanoscale strain-modulated electronic bandstructure landscape. Our findings illustrate the feasibility of utilizing nanoscale architectures and optical excitations to manipulate the local electronic bandstructure of monolayer TMDs and to enhance the many-body interactions of excitons, which is promising for the development of nanoscale energy-adjustable optoelectronic and photonic technologies., Comment: 36 pages, 29 figures

Coherent Diffraction Imaging (CDI) is an experimental technique to gain images of isolated structures by recording the light scattered off the sample. In principle, the sample density can be recovered from the scattered light field through a straightforward Fourier Transform operation. However, only the amplitude of the field is recorded, while the phase is lost during the measurement process and has to be retrieved by means of suitable, well-established, phase retrieval algorithms. In this work we present SPRING, an analysis framework tailored on X-ray Free Electron Laser (XFEL) diffraction data that implements the Memetic Phase Retrieval method to mitigate the shortcomings of conventional algorithms. We benchmark the approach on experimental data acquired in two experimental campaigns at SwissFEL and European XFEL. Imaging results on isolated nanostructures reveal unprecedented stability and resilience of the algorithm's behavior on the input parameters, as well as the capability of identifying the solution in conditions hardly treatable so far with conventional methods. A user-friendly implementation of SPRING is released as open-source software, aiming at being a reference tool for the coherent diffraction imaging community at XFEL and synchrotron facilities., Comment: 30 pages, 13 figures. Authors list updated

AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Unexpectedly, a phase with negative dR/dT has recently been observed when a large electric displacement field is applied and the charge carrier density is tuned to the vicinity of an ultra-low-density van Hove singularity. This phase exhibits features consistent with Wigner crystallization, including a characteristic temperature dependence and non-linear current bias behavior. However, more direct evidence for the emergence of an electron crystal in AB-stacked bilayer graphene at zero magnetic field remains elusive. Here we explore the low-frequency noise consistent with depinning and sliding of a Wigner crystal lattice. The current bias and frequency dependence of these noise spectra align well with findings from previous experimental and theoretical studies on the quantum electron solids. Our results offer transport signatures consistent with Wigner crystallization in AB-stacked bilayer graphene at zero and finite magnetic fields, paving the way for further substantiating an anomalous Hall crystal in its original form.

The transition dynamics of two-state systems with time-dependent energy levels, first considered by Landau, Zener, Majorana, and St\"uckelberg, is one of the basic models in quantum physics and has been used to describe various physical systems. We propose here a generalization of the Landau-Zener (LZ) problem characterized by distinct paths of the instantaneous eigenstates as the system evolves in time, while keeping the instantaneous eigenenergies exactly as in the standard LZ model. We show that these paths play an essential role in the transition probability $P$ between the two states, and can lead to superadiabatic transitions, i.e., to a substantial reduction of $P$. As an instructive extreme case, we identify an unconditionally adiabatic regime with $P=0$ no matter how fast the system evolves in time and regardless of the energy gap between the two levels at the anticrossing point. On the other hand, large $P$ occur even in the absence of any anticrossing point. These phenomena can be explained by observing the rotation of the instantaneous eigenvectors on the Bloch sphere. The superadiabatic LZ model can describe valley transition dynamics during charge and spin shuttling in semiconductor quantum dots., Comment: 6 pages, 3 figures

Photonics has been revolutionized by breakthroughs in optical metasurfaces and layered two-dimensional materials. Yet, integrating these two fields in a singular system has remained challenging. Here, we introduce the concept of van der Waals (vdW) heterostructure metasurfaces, where ultrathin multilayer vdW material stacks are shaped into precisely engineered resonant nanostructures for boosting light-matter interactions. By leveraging quasi-bound states in the continuum to create intrinsic cavities from WS$_2$ monolayers encapsulated in hexagonal boron nitride, we observe room-temperature strong coupling and polaritonic luminescence, which further unveils a saturation of the strong-coupling regime at ultralow fluences <1 nJ/cm2, more than three orders of magnitude smaller than in previous 2D-cavity systems. Our approach, seamlessly merging metasurfaces and vdW materials, unlocks new avenues for ultrathin optical devices with atomic-scale precision and control., Comment: main + supplementary (28 pages, 4 main figures, 9 supplementary figures)

Detecting single photons is essential for applications such as dark matter detection, quantum science and technology, and biomedical imaging. Superconducting nanowire single-photon detectors (SNSPDs) excel in this task due to their near-unity detection efficiency, sub-Hz dark count rates, and picosecond timing jitter. However, a local increase of current density (current crowding) in the bends of meander-shaped SNSPDs limits these performance metrics. By locally irradiating the straight segments of SNSPDs with helium ions while leaving the bends unirradiated, we realize current-crowding-free SNSPDs with simultaneously enhanced sensitivity: after irradiation with 800 ions/nm$\unicode{xB2}$, locally irradiated SNSPDs showed a relative saturation plateau width of 37% while fully irradiated SNSPDs reached only 10%. This larger relative plateau width allows operation at lower relative bias currents, thereby reducing the dark count rate while still detecting single photons efficiently. We achieve an internal detection efficiency of 94% for a wavelength of 780 nm with a dark count rate of 7 mHz near the onset of saturating detection efficiency., Comment: 11 pages, 7 figures

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and third telecom windows with similar performance remains an open challenge. Here, we report an optimized heterostructure design for QDs emitting in the O- and C-bands grown by means of molecular beam epitaxy. The InAs QDs are grown on compositionally graded InGaAs buffers, which act as virtual substrates, and are embedded in mostly relaxed active regions. Reciprocal space maps of the indium profiles and optical absorption spectra are used to optimize In0.22Ga0.78As and In0.30Ga0.70As active regions, accounting for the chosen indium grading profile. This approach results in a tunable QD photoluminescence (PL) emission from 1200 up to 1600 nm. Power and polarization dependent micro-PL measurements performed at 4 K reveal exciton-biexciton complexes from quantum dots emitting in the telecom O- and C-bands. The presented study establishes a flexible platform that can be an essential component for advanced photonic devices based on InAs/GaAs that serve as building blocks for future quantum networks.

The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying the (opto-)electronic properties of nanodevices. Graphene, with its remarkable opto-electronic properties, is an ideal candidate for such applications. Further candidates are 2D polymers, crystalline polymeric materials with customizable structure and electronic properties that can be synthesized in all mathematically possible Bravais lattices. In this study, we investigated the optoelectronic properties of a heterostructure created by pristine graphene and a rectangular 2D polyimide (2DPI) film. This imprints a new superlattice on graphene in conjunction with a direct influence on its electronic properties. Theoretical and experimental analyses reveal that interlayer charge exchange between the 2D polymer and graphene induces hole doping in the graphene layer. We have also observed that the properties of the heterostructure are dependent on the substrate used in experiments, likely due to the porous character of the 2DPI allowing direct interaction of graphene with the support. These findings highlight the unique ability to tailor functionalities in 2D polymers-based heterostructures, allowing the development of optoelectronic devices with precisely engineered properties and stimulating further exploration of the diverse phenomena accessible through tailored designs of the 2D polymers.

Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature sub-gap emission and single-photon response. In this letter, we investigate the layer-dependent charge state lifetime of Se vacancies in WSe$_2$. In one monolayer WSe$_2$, we observe ultrafast charge transfer from the lowest unoccupied orbital of the top Se vacancy to the graphene substrate within (1.0 $\pm$ 0.2) ps measured via the current saturation in scanning tunneling approach curves. For Se vacancies decoupled by TMD multilayers, we find a sub-exponential increase of the charge lifetime from (62 $\pm$ 14) ps in bilayer to few nanoseconds in four-layer WSe$_2$, alongside a reduction of the defect state binding energy. Additionally, we attribute the continuous suppression and energy shift of the dI/dV in-gap defect state resonances at very close tip--sample distances to a current saturation effect. Our results provide a key measure of the layer-dependent charge transfer rate of chalcogen vacancies in TMDs.

We calculate the influence of diffusive and ballistic transport on ultrafast magnetization in thick metallic films. When only diffusive transport is present, gradients of magnetization in the material remain up to picosecond timescales. In contrast, in the extreme superdiffusive limit where ballistic transport dominates, the magnetization changes homogeneously in space. We calculate the measurable magneto-optical responses for a $\SI{40}{\nano\meter}$ Nickel film. Although the resulting Kerr rotation dynamics are found to be very similar in the two limits of transport, our simulations reveal a clear signature of magnetization gradients in the Kerr ellipticity dynamics, namely a strong probe-angle dependence for the case when diffusive transport allows gradients to persist. We then perform probe-angle dependent complex magneto-optical Kerr effect (CMOKE) measurements on an excited \SI{40}{\nano\meter} Nickel film. The angle dependence of the measured Kerr signals closely matches the simulated response with diffusive transport. Therefore we conclude that the influence of ballistic transport on ultrafast magnetization dynamics in such films is negligible.

In the field of superconducting electronics, the on-chip generation of AC radiation is essential for further advancements. Although a Josephson junction can emit AC radiation from a purely DC voltage bias, the coherence of this radiation is significantly limited by Johnson-Nyquist noise. We relate this limitation to the thermodynamic uncertainty relation (TUR) in the field of stochastic thermodynamics. Recent findings indicate that the thermodynamic uncertainty relation can be broken by a classical pendulum clock. We demonstrate how the violation of the TUR can be used as a design principle for radiation sources by showing that a superconducting clock circuit emits coherent AC radiation from a DC bias., Comment: 19 pages, 5 figures, Submission to SciPost

Strong charge-photon coupling allows the coherent coupling of a charge qubit, realized by a single charge carrier (either an electron or a hole) in a double quantum dot, to photons of a microwave resonator. Here, we theoretically demonstrate that, in the dispersive regime, the photons can mediate both an $i\mathrm{SWAP}$ gate as well as a $\sqrt{i\mathrm{SWAP}}$ gate between two distant charge qubits. We provide a thorough discussion of the impact of the dominant noise sources, resonator damping and charge qubit dephasing on the average gate fidelity. Assuming a state-of-the art resonator decay rate and charge qubit dephasing rate, the predicted average gate fidelities are below 90\%. However, a decrease of the charge qubit dephasing rate by one order of magnitude is conjectured to result in gate fidelities surpassing 95\%., Comment: 6+8 pages, 3 figures

We describe a compact ultra-high vacuum (UHV) scanning tunneling microscope (STM) system that does not need any external supply of cooling liquids. It achieves temperatures down to 1.5 K and a z-noise down to 300 fmRMS for the frequency range of 0.1 Hz - 5 kHz (feedback loop off). It employs a pulse tube cryocooler (PTC) and a Joule-Thomson (JT) stage inducing only small temperature oscillations at the STM with amplitude below 1 mK. The challenge to combine an effective vibrational decoupling from the PTC with sufficient thermal conduction is tackled by a multipartite approach. We realize a minimal stiffness of the UHV bellows that connect the PTC and the STM chamber. Fine Copper wires mechanically decouple the PTC stages from cooling plates that carry the thermal shields, the JT stage and the STM. Soft springs decouple the STM from the JT stage. Finally, the STM body has an optimized conical shape and is made of the light and stiff material Shapal Hi MSoft such that a strong reduction of low frequency vibrations results for the tunnel junction. The voltage noise in the tunnel junction is 0.12 mV and an RF antenna close to the tunnel junction provides radio frequency excitations up to 40 GHz with amplitudes up to 10 mV., Comment: 12 pages, 8 figures

The two stable surfaces of GdRu2Si2 are studied using spin-polarized scanning tunneling microscopy (SP-STM). Depending on the applied magnetic field different magnetic phases have been found and the presented measurements are in agreement with the respective previously proposed multi-Q spin textures. In particular the multi-Q nature of the zero magnetic field state, for which previous experiments could not rule out the coexistence of single-Q states, can be confirmed by our spin-resolved measurements on the Si-terminated surface. The surfaces of GdRu2Si2 exhibit strong magnetism-induced modulations of the spin-averaged density of states. We find that while the magnetic contribution to the tunnel signal can be clearly identified for the Si-terminated surface this proves to be much more difficult for the Gd-terminated surface. However, the magnetic field dependent spatial modulations on the Gd-terminated surface demonstrate that additional magnetic phase transitions occur for the surface layer compared to those identified for bulk GdRu2Si2 and possible spin textures are presented., Comment: 7 pages, 5 figures

We demonstrate evidence of correlated magnetism for exciton-polaritons in a MoSe$_{2}$/WS$_{2}$ moir\'e heterostructure with near-parallel alignment subject to electron doping. In our experiments, interactions between electrons and moir\'e excitons are controlled electrostatically by field-effect doping, and the polaritonic regime of strong light-matter coupling is established in an open cryogenic microcavity. Remarkably, at filling fractions around one electron per moir\'e cell, we observe drastic and nonlinear enhancement of the effective polariton Land\'e factor as a hallmark of correlated magnetism, which is cavity-controlled via resonance tuning of light and matter polariton constituents. Our work establishes moir\'e van der Waals heterostructures as an outstanding platform for studies of correlated phenomena in the presence of strong light-matter coupling and many-body phases of lattice-ordered excitons, charges and spins.

Heterostructures from complex oxides allow one to combine various electronic and magnetic orders as to induce new quantum states. A prominent example is the coupling between superconducting and magnetic orders in multilayers from high-Tc cuprates and manganites. A key role is played here by the interfacial CuO2 layer whose distinct properties remain to be fully understood. Here, we study with resonant inelastic X-ray scattering (RIXS) the magnon excitations of this interfacial CuO2 layer. In particular, we show that the underlying antiferromagnetic exchange interaction at the interface is strongly suppressed to J ~ 70 meV, as compared to J ~ 130 meV for the CuO2 layers away from the interface. Moreover, we observe an anomalous momentum dependence of the intensity of the interfacial magnon mode and show that it suggests that the antiferromagnetic order is accompanied by a particular kind of orbital order that yields a so-called altermagnetic state. Such a two-dimensional altermagnet has recently been predicted to enable new spintronic applications and superconducting proximity effects.

Semiconductor quantum dot arrays are a leading architecture for the development of quantum technologies. Over the years, the constant capacitance model has served as a fundamental framework for simulating, understanding, and navigating the charge stability diagrams of small quantum dot arrays. However, while the size of the arrays keeps growing, solving the constant capacitance model becomes computationally prohibitive. This paper presents an open-source software package able to compute a $100 \times 100$ pixels charge stability diagram of a 16-dot array in less than a second. Smaller arrays can be simulated in milliseconds - faster than they could be measured experimentally, enabling the creation of diverse datasets for training machine learning models and the creation of digital twins that can interface with quantum dot devices in real-time. Our software package implements its core functionalities in the systems programming language Rust and the high-performance numerical computing library JAX. The Rust implementation benefits from advanced optimisations and parallelisation, enabling the users to take full advantage of multi-core processors. The JAX implementation allows for GPU acceleration.

We prove that the magnetization is equal to the edge current in the thermodynamic limit for a large class of models of lattice fermions with finite-range interactions satisfying local indistinguishability of the Gibbs state, a condition known to hold for sufficiently high temperatures. Our result implies that edge currents in such systems are determined by bulk properties and are therefore stable against large perturbations near the boundaries. Moreover, the equality persists also after taking the derivative with respect to the chemical potential. We show that this form of bulk-edge correspondence is essentially a consequence of homogeneity in the bulk and locality of the Gibbs state. An important intermediate result is a new version of Bloch's theorem for two-dimensional systems, stating that persistent currents vanish in the bulk., Comment: 37 pages, 5 figures; v2: extended explanation of (21), corrected typos; v3: added Theorem IV and proof in Section 3.5, improved presentation, corrected typos

Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution.

The intrinsic valley degree of freedom makes bilayer graphene a unique platform for emerging types of semiconducting qubits. The single-carrier quantum dot ground state exhibits a two-fold degeneracy where the two states have opposite spin and valley quantum numbers. By breaking the time-reversal symmetry of this ground state with an out-of-plane magnetic field, a novel type of qubit (Kramers qubit), encoded in the two-dimensional spin-valley subspace, becomes accessible. The Kramers qubit is robust against known spin- and valley-mixing mechanisms, as it requires a simultaneous change of both quantum numbers, potentially resulting in long relaxation and coherence times. We measure the relaxation time of a single carrier in the excited states of a bilayer graphene quantum dot at small ($\sim \mathrm{mT}$) and zero magnetic fields. We demonstrate ultra-long spin-valley relaxation times of the Kramers qubit exceeding $30~\mathrm{s}$, which is about two orders of magnitude longer than the spin relaxation time of $400~\mathrm{ms}$. The demonstrated high-fidelity single-shot readout and long relaxation times are the foundation for novel, long-lived semiconductor qubits.

Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and coherence time - even though the speed and coherence of various qubits can differ by up to 8 orders of magnitude. This is the qubit speed-coherence dilemma: qubits are either coherent but slow or fast but short-lived. Here, we demonstrate a qubit for which we can triple the speed while simultaneously quadrupling the Hahn-echo coherence time when tuning a local electric field. In this way, the qubit speed and coherence scale together without compromise on either quantity, boosting the Q-factor by over an order of magnitude. Our qubit is a hole spin in a Ge/Si core/shell nanowire providing strong 1D confinement, resulting in the direct Rashba spin-orbit interaction. Due to Heavy-hole light-hole mixing a maximum of the spin-orbit strength is reached at finite electrical field. At the local maximum, charge fluctuations are decoupled from the qubit and coherence is enhanced, yet the drive speed becomes maximal. Our proof-of-concept experiment shows that a properly engineered qubit can be made faster and simultaneously more coherent, removing an important roadblock. Further, it demonstrates that through all-electrical control a qubit can be sped up, without coupling more strongly to the electrical noise environment. As charge fluctuators are unavoidable in semiconductors and all-electrical control is highly scalable, our results improve the prospects for quantum computing in Si and Ge., Comment: Main: 6 pages with 3 display items plus 2 pages for references and methods Supplementary: 12 pages with 7 display items

Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces. This presents a real 'needle in the haystack' problem, which, until now, has resisted complete automation due to device variability and fabrication imperfections. In this study, we present the first fully autonomous tuning of a semiconductor qubit, from a grounded device to Rabi oscillations, a clear indication of successful qubit operation. We demonstrate this automation, achieved without human intervention, in a Ge/Si core/shell nanowire device. Our approach integrates deep learning, Bayesian optimization, and computer vision techniques. We expect this automation algorithm to apply to a wide range of semiconductor qubit devices, allowing for statistical studies of qubit quality metrics. As a demonstration of the potential of full automation, we characterise how the Rabi frequency and g-factor depend on barrier gate voltages for one of the qubits found by the algorithm. Twenty years after the initial demonstrations of spin qubit operation, this significant advancement is poised to finally catalyze the operation of large, previously unexplored quantum circuits.

Measurement-based entanglement is a method for entangling quantum systems through the state projection that accompanies a parity measurement. We derive a stochastic master equation describing measurement-based entanglement of a pair of silicon double-dot flopping-mode spin qubits, develop numerical simulations to model this process, and explore what modifications could enable an experimental implementation of such a protocol. With device parameters corresponding to current qubit and cavity designs, we predict an entanglement fidelity $F_e \approx$ 61%. By increasing the cavity outcoupling rate by a factor of ten, we are able to obtain a simulated $F_e \approx$ 81% while maintaining a yield of 33%.

Chiral oligopeptide monolayers were adsorbed on a ferromagnetic surface and their magnetoresistance was measured as a function of the angle between the magnetization of the ferromagnet and the surface normal. These measurements were conducted as a function of temperature for both enantiomers. The angle dependence was found to follow the cosine square function. Quantum simulations revealed that the angular distribution could be obtained only if the monolayer has significant effective spin orbit coupling (SOC), that includes contribution from the vibrations. The model shows that SOC only in the leads cannot reproduce the observed angular dependence. The simulation can reproduce the experiments only if it included electron-phonon interactions and dissipation.

We use a single-channel scattering formalism to derive general expressions for the Andreev bound-state energies and resulting current--phase relationship in a one-dimensional semiconductor-based SNS-junction, including arbitrarily oriented effective spin--orbit and Zeeman fields and taking into account disorder in the junction in by including a single scatterer with transmission probability $0 \leq T^2 \leq 1$, arbitrarily located in the normal region. We first corroborate our results by comparing them to the known analytic limiting-case expressions. Then we simplify our general result in several additional limits, including the case of the scatterer being at a specific location and the cases of small and large spin--orbit fields compared to the Zeeman splitting, assuming low transparency ($T\ll 1$). We believe that our results could be helpful for disentangling the main spin-mixing processes in experiments on low-dimensional semiconductor-based SNS-junctions.

Bias triangles represent features in stability diagrams of Quantum Dot (QD) devices, whose occurrence and property analysis are crucial indicators for spin physics. Nevertheless, challenges associated with quality and availability of data as well as the subtlety of physical phenomena of interest have hindered an automatic and bespoke analysis framework, often still relying (in part) on human labelling and verification. We introduce a feature extraction framework for bias triangles, built from unsupervised, segmentation-based computer vision methods, which facilitates the direct identification and quantification of physical properties of the former. Thereby, the need for human input or large training datasets to inform supervised learning approaches is circumvented, while additionally enabling the automation of pixelwise shape and feature labeling. In particular, we demonstrate that Pauli Spin Blockade (PSB) detection can be conducted effectively, efficiently and without any training data as a direct result of this approach.

We measured the spectrum of a single-carrier bilayer graphene quantum dot as a function of both parallel and perpendicular magnetic fields, using a time-resolved charge detection technique that gives access to individual tunnel events. Thanks to our unprecedented energy resolution of 4$\mu~$eV, we could distinguish all four levels of the dot's first orbital, in particular in the range of magnetic fields where the first and second excited states cross ($B_\perp\lesssim 100~$mT). We thereby experimentally establish, the hitherto extrapolated, single-charge carrier spectrum picture and provide a new upper bound for the inter-valley mixing, equal to our energy resolution.

Clusters supported by solid substrates are prime candidates for heterogeneous catalysis and can be prepared in various ways. While mass-selected soft-landing methods are often used for the generation of monodisperse particles, self-assembly typically leads to a range of different cluster sizes. Here we show by scanning tunneling microscopy measurements that in the initial stages of growth Mn forms trimers on a close-packed hexagonal Ir surface, providing a route for self-organized monodisperse cluster formation on an isotropic metallic surface. For an increasing amount of Mn, first a phase with reconstructed monolayer islands is formed, until at full coverage a pseudomorphic Mn phase evolves which is the most densely packed one of the three different observed Mn phases on Ir(111). The magnetic state of both the reconstructed islands and the pseudomorphic film is found to be the prototypical antiferromagnetic N\'eel state with 120{\deg} spin rotation between all nearest neighbors in the hexagonal layer., Comment: Founded by Marie Sk{\l}odowska-Curie Actions; SPEAR project, with grant number 955671

A combination of a pumpable gate valve and a self-built cooling collar permits bake-out of an ultra-high vacuum chamber without having to dismount sensitive equipment. A small pump port on the closed gate valve maintains ultra-high vacuum conditions for a TVIPS TemCam-XF416 imaging electron detector in the case of venting the main chamber. The water-cooled collar mounted to the detector housing prevents heating of the detector upon bake-out of the ultra-high vacuum chamber., Comment: 3 pages, 2 figures

The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this work we investigate the VS of a SiGe/Si/SiGe heterostructure as a function of the size and location of the silicon quantum dot. We use the effective mass approach to describe a realistic system, which takes into account concentration fluctuations at the Si/SiGe interfaces and also the interface roughness. We predict that the size of the quantum dot is an important parameter for the enhancement of the VS and it can also induce a transition between the disorder-dominated to deterministic-enhanced regimes. Analyzing how the VS changes when we move the quantum dot in a specific direction, we obtain that the size of the quantum dot can be used to reduce the variability of the VS, which is relevant for charge/spin shuttling.

We study a mechanism to induce superconductivity in atomically thin semiconductors where excitons mediate an effective attraction between electrons. Our model includes interaction effects beyond the paradigm of phonon-mediated superconductivity and connects to the well-established limits of Bose and Fermi polarons. By accounting for the strong-coupling physics of trions, we find that the effective electron-exciton interaction develops a strong frequency and momentum dependence accompanied by the system undergoing an emerging BCS-BEC crossover from weakly bound $s$-wave Cooper pairs to a superfluid of bipolarons. Even at strong-coupling the bipolarons remain relatively light, resulting in critical temperatures of up to 10\% of the Fermi temperature. This renders heterostructures of two-dimensional materials a promising candidate to realize superconductivity at high critical temperatures set by electron doping and trion binding energies., Comment: 9+9 pages, 4+5 figures

The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state.

We consider the effects of quasiperiodic spatial modulation on the quantum Hall plateau transition, by analyzing the Chalker-Coddington network model for the integer quantum Hall transition with quasiperiodically modulated link phases. In the conventional case (uncorrelated random phases), there is a critical point separating topologically distinct integer quantum Hall insulators. Surprisingly, the quasiperiodic version of the model supports an extended critical phase for some angles of modulation. We characterize this critical phase and the transitions between critical and insulating phases. For quasiperiodic potentials with two incommensurate wavelengths, the transitions we find are in a different universality class from the random transition. Upon adding more wavelengths they undergo a crossover to the uncorrelated random case. We expect our results to be relevant to the quantum Hall phases of twisted bilayer graphene or other Moir\'e systems with large unit cells., Comment: 11 pages, 9 figures

The generation and evolution of entanglement in quantum many-body systems is an active area of research that spans multiple fields, from quantum information science to the simulation of quantum many-body systems encountered in condensed matter, subatomic physics, and quantum chemistry. Motivated by recent experiments exploring quantum information processing systems with electrons trapped above the surface of cryogenic noble gas substrates, we theoretically investigate the generation of \emph{motional} entanglement between two electrons via their unscreened Coulomb interaction. The model system consists of two electrons confined in separate electrostatic traps which establish microwave frequency quantized states of their motion. We compute the motional energy spectra of the electrons, as well as their entanglement, by diagonalizing the model Hamiltonian with respect to a single-particle Hartree product basis. This computational procedure can in turn be employed for device design and guidance of experimental implementations. In particular, the theoretical tools developed here can be used for fine tuning and optimization of control parameters in future experiments with electrons trapped above the surface of superfluid helium or solid neon., Comment: Revised figures and discussions

Temperature-dependent nitrogen-vacancy (NV)-center relaxometry is an established tool to characterize paramagnetic molecules near to a sensing diamond, gaining momentum in different fields of science. However, recent results indicate that conversion between NV-center charge states impedes these measurements and influences the results for the $T_1$ time. While the temperature dependence of NV centers' $T_1$ time is well-studied, additional contributions from temperature-dependent charge conversion during the dark time may further affect the measurement results. We combine temperature-dependent relaxometry and fluorescence spectroscopy at varying laser powers to unravel the temperature dependence of charge conversion in nanodiamond for biologically relevant temperatures. While we observe a decrease of the $T_1$ time with increasing temperatures, charge conversion remains unaffected by the temperature change. These results allow the temperature dependent performance of $T_1$ relaxometry without further consideration of temperature dependence of charge conversion., Comment: 8 pages, 7 figures

We consider as a model of Weyl semimetal thermoelectric transport a $(3+1)$-dimensional charged, relativistic and relaxed fluid with a $U(1)_{V} \times U(1)_{A}$ chiral anomaly. We take into account all possible mixed energy, momentum, electric and chiral charge relaxations, and discover which are compatible with electric charge conservation, Onsager reciprocity and a finite DC conductivity. We find that all relaxations respecting these constraints necessarily render the system open and violate the second law of thermodynamics. We then demonstrate how the relaxations we have found arise from kinetic theory and a modified relaxation time approximation. Our results lead to DC conductivities that differ from those found in the literature opening the path to experimental verification., Comment: 26 pages, no figures; v3, acknowledgment added

We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations originate from ballistic transport along the ring arms. The oscillations can therefore be attributed to topological surface states, which can maintain a quasi-ballistic transport regime in the presence of disorder. Further insight on the phase coherence is gained by comparing with similar Aharonov-Bohm-type oscillations in topological insulator nanoribbons exposed to an axial magnetic field. Here, quasi-ballistic phase-coherent transport is confirmed for closed-loop topological surface states in transverse direction enclosing the cross-section of the nanoribbon. In contrast, the appearance of universal conductance fluctuations indicates phase-coherent transport in the diffuse regime, which is attributed to bulk carrier transport. Thus, it appears that even in the presence of diffusive $p$-type charge carriers in Aharonov-Bohm ring structures, phase-coherent quasi-ballistic transport of topologically protected surface states is maintained over long distances., Comment: 11 pages (including Supplementary Material), 5 figures, 4 supplementary figures

The topology of the electronic band structure of solids can be described by its Berry curvature distribution across the Brillouin zone. We theoretically introduce and experimentally demonstrate a general methodology based on the measurement of energy- and momentum-resolved optical transition rates, allowing to reveal signatures of Berry curvature texture in reciprocal space. By performing time- and angle-resolved photoemission spectroscopy of atomically thin WSe$_2$ using polarization-modulated excitations, we demonstrate that excitons become an asset in extracting the quantum geometrical properties of solids. We also investigate the resilience of our measurement protocol against ultrafast scattering processes following direct chiroptical transitions., Comment: 11 pages, 4 figures + supplementary materials

The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS$_2$ by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). By substrate chemical gating different charge states of sulfur vacancies (Vac$_\text{S}$) and substitutional rhenium dopants (Re$_\text{Mo}$) can be stabilized. Vac$_\text{S}^{-1}$ as well as Re$_\text{Mo}^{0}$ and Re$_\text{Mo}^{-1}$ exhibit local lattice distortions and symmetry-broken defect orbitals attributed to a Jahn-Teller effect (JTE) and pseudo-JTE, respectively. By mapping the electronic and geometric structure of single point defects, we disentangle the effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking.

We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS$_2$ devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, $E_D$, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The $E_D$ value increases with the decreasing 1T-TaS$_2$ film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that depinning is absent in the commensurate phase. It is induced by the electric field but facilitated by local heating. The measured trends for $E_D$ of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials., Comment: 25 pages; 7 figures

Moir\'{e} interference effects have profound impact on the optoelectronic properties of vertical van der Waals structures. Here we establish secondary electron imaging in a scanning electron microscope as a powerful technique for visualizing registry-specific domains in vertical bilayers of transition metal dichalcogenides with common moir\'e phenomena. With optimal parameters for contrast-maximizing imaging of high-symmetry registries, we identify distinct crystal realizations of WSe$_2$ homobilayers and MoSe$_2$-WSe$_2$ heterobilayers synthesized by chemical vapor deposition, and demonstrate ubiquitous lattice reconstruction in stacking-assembled bilayers with near parallel and antiparallel alignment. Our results have immediate implications for the optical properties of registry-specific excitons in layered stacks of transition metal dichalcogenides, and demonstrate the general potential of secondary electron imaging for van der Waals twistronics., Comment: 8 pages, 5 figures

Interlayer exciton diffusion is studied in atomically-reconstructed MoSe2/WSe2 heterobilayers with suppressed disorder. Local atomic registry is confirmed by characteristic optical absorption, circularly-polarized photoluminescence, and g-factor measurements. Using transient microscopy we observe propagation properties of interlayer excitons that are independent from trapping at moir\'e- or disorder-induced local potentials. Confirmed by characteristic temperature dependence for free particles, linear diffusion coefficients of interlayer excitons at liquid helium temperature and low excitation densities are almost 1000 times higher than in previous observations. We further show that exciton-exciton repulsion and annihilation contribute nearly equally to non-linear propagation by disentangling the two processes in the experiment and simulations. Finally, we demonstrate effective shrinking of the light-emission over time across several 100's of picoseconds at the transition from exciton- to the plasma-dominated regimes. Supported by microscopic calculations for bandgap renormalization to identify Mott threshold, this indicates transient crossing between rapidly expanding, short-lived electron-hole plasma and slower, long-lived exciton populations.

Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances leveraging quasi-bound states in the continuum (qBICs). Coupling between spin defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth facilitated by Q factors exceeding $10^2$. Our findings demonstrate a new class of spin based metasurfaces and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission., Comment: accepted version

The role and impact of spatial heterogeneity in two-dimensional quantum materials represents one of the major research quests regarding the future application of these materials in optoelectronics and quantum information science. In the case of transition-metal dichalcogenide heterostructures, in particular, direct access to heterogeneities in the dark-exciton landscape with nanometer spatial and ultrafast time resolution is highly desired, but remains largely elusive. Here, we introduce ultrafast dark field momentum microscopy to spatio-temporally resolve dark exciton formation dynamics in a twisted WSe$_2$/MoS$_2$ heterostructure with 55 femtosecond time- and 500~nm spatial resolution. This allows us to directly map spatial heterogeneity in the electronic and excitonic structure, and to correlate these with the dark exciton formation and relaxation dynamics. The benefits of simultaneous ultrafast nanoscale dark-field momentum microscopy and spectroscopy is groundbreaking for the present study, and opens the door to new types of experiments with unprecedented spectroscopic and spatiotemporal capabilities., Comment: 39 pages, 4 main figures, 8 supplemental figures