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Two-dimensional (2D) multiferroic materials with coexisting ferroelectricity and ferromagnetism have garnered substantial attention for their intriguing physical properties and diverse promising applications in spintronics. For example, multiferroic materials with electronically controlled broken central symmetry provide a versatile platform for designing and manipulating topological skyrmions and diverse spintronic applications. Here, we investigate the complex magnetic properties of room-temerature multiferroic material MoPtGe2S6 and its electrical control of topological skyrmions using first-principles calculations and atomistic micromagnetic simulations. A sizable Dzyaloshinskii-Moriya interaction (DMI) (2.1 meV) is found in the multiferroic material MoPtGe2S6 with an electrically polarized ground state. The magnetic skyrmions can be stabilized in monolayer MoPtGe2S6 under zero magnetic field, and the chirality of skyrmions can be reversed with electric field-induced flipping of electrical polarization due to the reversed chirality of the DMI. Furthermore, an external magnetic fielc can reverse the magnetization direction and topological charge of the skyrmions as well as tune the size of skyrmions. These results demonstrate that the monolayer MoPtGe2S6 can enrich the 2D skyrmion community and pave the way for electronically controlled spintronic devices., Comment: 24 pages, 7 figures

Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated at the contamination-free interface between Co and VSe2. Via interfacial hybridization with Co atomic overlayer, a magnetic moment of about 0.4 uB per V atom in ML VSe2 is revealed, approaching values predicted by previous theoretical calculations. Promotion of the ferromagnetism in ML VSe2 is accompanied by its antiferromagnetic coupling to Co and a reduction in the spin moment of Co. In comparison to the absence of this interface-induced ferromagnetism at the Fe/MLMoSe2 interface, these findings at the Co/ML-VSe2 interface provide clear proof that the ML VSe2, initially with magnetic disorder, is on the verge of magnetic transition.

Shrinking the size of a bulk metal into nanoscale leads to the discreteness of electronic energy levels, the so-called Kubo gap. Renormalization of the electronic properties with a tunable and size-dependent Kubo gap renders fascinating photon emission and electron tunneling. In contrast with usual three-dimensional (3D) metal clusters, here we demonstrate that Kubo gap can be achieved with a two-dimensional (2D) metallic transition metal dichalcogenide (i.e., 1T'-phase MoTe2) nanocluster embedded in a semiconducting polymorph (i.e., 1H-phase MoTe2). Such a 1T'-1H MoTe2 nanodomain resembles a 3D metallic droplet squeezed in a 2D space which shows a strong polarization catastrophe while simultaneously maintains its bond integrity which is absent in traditional delta-gapped 3D clusters. The weak screening of the host 2D MoTe2 leads to photon emission of such pseudo-metallic systems and a ballistic injection of carriers in the 1T'-1H-1T' homojunctions which may find applications in sensors and 2D reconfigurable devices.

The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As) family are direct band-gap semiconductors with protected valley states and that circularly polarized infrared light can induce valley-selective inter-band transitions. Our optovalleytronic device demonstrates a close to 100% valley- and spin-polarized current under in-plane bias and circularly polarized infrared light, which can be exploited to encode, process, and store information., Comment: 6 figures

The physics of flat band is novel and rich but difficult to access. In this regard, recently twisting of bilayer van der Waals (vdW)-bounded two-dimensional (2D) materials has attracted much attention, because the reduction of Brillouin zone will eventually lead to a diminishing kinetic energy. Alternatively, one may start with a 2D Kagome lattice, which already possesses flat bands at the Fermi level, but unfortunately these bands connect quadratically to other (dispersive) bands, leading to undesirable effects. Here, we propose, by first-principles calculation and tight-binding modeling, that the same bilayer twisting approach can be used to isolate the Kagome flat bands. As the starting kinetic energy is already vanishingly small, the interlayer vdW potential is always sufficiently large irrespective of the twisting angle. As such the electronic states in the (connected) flat bands become unstable against a spontaneous Wigner crystallization, which is expected to have interesting interplays with other flat-band phenomena such as novel superconductivity and anomalous quantum Hall effect.

We study the origin of the strong spin Hall effect (SHE) in a recently discovered family of Weyl semimetals, LaAl$X$ ($X$=Si, Ge) via a first-principles approach with maximally localized Wannier functions. We show that the strong intrinsic SHE in LaAl$X$ originates from the multiple slight anticrossings of nodal lines and points near $E_F$ due to their high mirror symmetry and large spin-orbit interaction. It is further found that both electrical and thermal means can enhance the spin Hall conductivity ($\sigma_{SH}$). However, the former also increases the electrical conductivity ($\sigma_{c}$), while the latter decreases it. As a result, the independent tuning of $\sigma_{SH}$ and $\sigma_{c}$ by thermal means can enhance the spin Hall angle (proportional to $\frac{\sigma_{SH}}{\sigma_{c}}$), a figure of merit of charge-to-spin current interconversion of spin-orbit torque devices. The underlying physics of such independent changes of the spin Hall and electrical conductivity by thermal means is revealed through the band-resolved and $k$-resolved spin Berry curvature. Our finding offers a new way in the search of high SHA materials for room-temperature spin-orbitronics applications., Comment: 21 pages, 6 figures

Despite the crucial role of interfacial perpendicular magnetic anisotropy in Co(Fe)/MgO based magnetic tunnel junction, the underlying mechanism is still being debated. Here, we report an anatomical study of oxygen and Mg effect on Pt/Co bilayers through repeated in-situ anomalous Hall effect measurements, controlled oxygen exposure and Mg deposition in an ultrahigh vacuum system. We found that chemisorbed oxygen not only quenches the effective magnetic moment of the Co surface layer, but also softens its magnetic anisotropy. However, a subsequent Mg dusting on the oxygen pre-exposed Pt/Co surface can recover the magnetic anisotropy. The ab initio calculations on the exchange splitting and orbital hybridization near the Fermi level give a clear physical explanation of the experimental observations. Our results suggest that Co(Fe)-O-M bond plays a more important role than the widely perceived Co(Fe)-O bond does in realizing interfacial perpendicular magnetic anisotropy in Co(Fe)/MgO heterostructures.