1. Thermal activation of low-density Ga implanted in Ge
- Author
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Foster, Natalie D., Miller, Andrew J., Hutchins-Delgado, Troy A., Smyth, Christopher M., Wanke, Michael C., Lu, Tzu-Ming, and Luhman, Dwight R.
- Subjects
Condensed Matter - Materials Science - Abstract
The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of rapid thermal anneal temperature and implant density. We show that for our implant conditions the activation is best for anneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of 64% at the highest fluence. Below 400 $^\circ$C, remaining implant damage results in defects that act as superfluous carriers, and above 650 $^\circ$C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 64% as the implant fluence increased from $6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits., Comment: 7 pages, 4 figures
- Published
- 2022
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