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Considering the interband correlation, we present a generalized multiple-scattering approach of Green's function to investigate the effects of electron-impurity scattering on the density of states in silicene. The reduction of energy gaps in the case of relatively high chemical potential and the transformation of split-off impurity bands into band tails for low chemical potential are found. The dependency of optical conductivity on the impurity concentration is also discussed for frequency within the terahertz regime., Comment: 10 pages, 8 figures, submitted to PRB

Considering finite-temperature screened electron-impurity scattering, we present a kinetic equation approach to investigate transport properties of two-dimensional massive fermions in silicene. We find that the longitudinal conductivity is always nonvanishing when chemical potential lies within the energy gap. This residual conductivity arises from interband correlation and strongly depends on strength of electron-impurity scattering. We also clarify that the electron-impurity interaction makes substantial contributions to the spin- and valley-Hall conductivities, which, however, are almost independent of impurity density. The dependencies of longitudinal conductivity as well as of spin- and valley-Hall conductivities on chemical potential, on temperature, and on gap energy are analyzed., Comment: Minor correction, accepted for publication in PRB

The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. It is found that the pristine silicene is not stable in air because the oxygen molecule can be easily adsorbed and dissociated into two O atoms without overcoming any energy barrier on pristine silicene surface. In addition, dissociated oxygen atoms are relatively difficult to migrate on or desorbed from pristine silicene surface, leading to poor mobility of oxygen atom. As a result, silicene would be changed into Si-O compounds in air. The work will be helpful to reveal the detail of the interaction between oxygen molecules and pristine silicene surface, especially helpful to understand the stability of silicene in air.

We examine the effect of changing the linear polarization angle $\theta$ of incident microwaves with respect to the dc current on radiation-induced magnetoresistance oscillations in a two-dimensional (2D) system within the balance-equation formulation of the photon-assisted magnetotransport model, considering the radiative decay as the sole damping mechanism. At an extremum the amplitude of oscillatory magnetoresistance $R_{xx}$ exhibits a sinusoidal, up to a factor of 5, magnitude variation with rotating the polarization angle $\theta$. The maximal amplitude shows up generally at a nonzero $\theta$, which is dependent upon the extremum in question, the 2D electron setup, the radiation frequency and the magnetic field orientation. These results provide a natural explanation for the experimental observations by Mani {\it et al.} [Phys. Rev. B {\bf 84}, 085308 (2011)], and Ramanayaka {\it et al.} [Phys. Rev. B {\bf 85}, 205315 (2012)]., Comment: 5 pages, two figures

Considering screeening of electron scattering interactions in terms of the finite-temperature STLS theory and solving the linearized Boltzmann equation (with no appeal to a relaxation time approximation), we present a theoretical analysis of the low-temperature Seebeck effect in two-dimensional semiconductors with dilute electron densities. We find that the temperature ($T$) dependencies of the diffusion and phonon-drag thermoelectric powers ($S_d$ and $S_g$) can no longer be described by the conventional simple power-laws. As temperature increases, $|S_d|/T$ decreases when $T\gtrsim 0.1 \epsilon_F$ ($\epsilon_F$ is the Fermi energy), while $|S_g|$ first increases and then falls, resulting a peak located at a temperature between Bloch-Gr\"uneisen temperature and $\epsilon_F$., Comment: 12 pages, 5 figures

We examine the current-induced magnetoresistance oscillations in high-mobility two-dimensional electron systems using the balance-equation scheme for nonlinear magnetotransort. The reported analytical expressions for differential magnetoresistivity at high filling factors in the overlapping Landau-level regime, which show good agreement with the experimental observation and the numerical calculation, may be helpful in extracting physical information from experiments., Comment: 4 pages, 2 figures

We present a kinetic equation approach to investigate dc transport properties of graphene in the diffusive regime considering long-range electron-impurity scattering. In our study, the effects of interband correlation (or polarization) on conductivity are taken into account. We find that the conductivity contains not only the usual term inversely proportional to impurity density $N_i$, but also an anomalous term that is linear in $N_i$. This leads to a minimum in the density dependence of conductivity when the electron density $N_{\rm e}$ is equal to a critical value, $N_c$. For $N_{\rm e}>N_c$ the conductivity varies almost linearly with the electron density, while it is approximately inversely proportional to $N_{\rm e}$ when $N_{\rm e}

We employ a helicity-basis kinetic equation approach to investigate the anomalous Hall effect in two-dimensional narrow-band semiconductors considering both Rashba and extrinsic spin-orbit (SO) couplings, as well as a SO coupling directly induced by an external driving electric field. Taking account of long-range electron-impurity scattering up to the second Born approximation, we find that the various components of the anomalous Hall current fit into two classes: (a) side-jump and (b) skew scattering anomalous Hall currents. The side-jump anomalous Hall current involves contributions not only from the extrinsic SO coupling but also from the SO coupling due to the driving electric field. It also contains a component which arises from the Rashba SO coupling and relates to the off-diagonal elements of the helicity-basis distribution function. The skew scattering anomalous Hall effect arises from the anisotropy of the diagonal elements of the distribution function and it is a result of both the Rashba and extrinsic SO interactions. Further, we perform a numerical calculation to study the anomalous Hall effect in a typical InSb/AlInSb quantum well. The dependencies of the side-jump and skew scattering anomalous Hall conductivities on magnetization and on the Rashba SO coupling constant are examined., Comment: 16 pages, 4 figures, accepted for publication in PRB

Motivated by a recent experiment[Nature {\bf 442}, 176 (2006)], we present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Our theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering, while its spatial variation is determined by the intrinsic spin-orbit coupling., Comment: 5 pages, 3 figures

A nonequilibrium Green's function approach is employed to investigate the spin-Hall effect in diffusive two-dimensional electron systems with Rashba spin-orbit interaction. Considering a long-range electron-impurity scattering potential in the self-consistent Born approximation, we find that the spin-Hall effect arises from two distinct interband polarizations in helicity basis: a disorder-unrelated polarization directly induced by the electric field and a polarization mediated by electron-impurity scattering. The disorder-unrelated polarization is associated with all electron states below the Fermi surface and produces the original intrinsic spin-Hall current, while the disorder-mediated polarization emerges with contribution from the electron states near the Fermi surface and gives rise to an additional contribution to the spin-Hall current. Within the diffusive regime, the total spin-Hall conductivity vanishes in {\it infinitely large} samples, independently of temperature, of the spin-orbit coupling constant, of the impurity density, and of the specific form of the electron-impurity scattering potential. However, in a {\it finite-size} Rashba two-dimensional semiconductor, the spin-Hall conductivity no longer always vanishes. Depending on the sample size in the micrometer range, it can be positive, zero or negative with a maximum absolute value reaching as large as $e/8\pi$ order of magnitude at low temperatures. As the sample size increases, the total spin-Hall conductivity oscillates with a decreasing amplitude. We also discuss the temperature dependence of the spin-Hall conductivity for different sample sizes., Comment: 9 pages, 3 figures, extended version of cond-mat/0411629

Employing a nonequilibrium Green's function approach, we examine the effects of long-range hole-impurity scattering on spin-Hall current in $p$-type bulk semiconductors within the framework of the self-consistent Born approximation. We find that, contrary to the null effect of short-range scattering on spin-Hall current, long-range collisions do produce a nonvanishing contribution to the spin-Hall current, which is independent of impurity density in the diffusive regime and relates only to hole states near the Fermi surface. The sign of this contribution is opposite to that of the previously predicted disorder-independent spin-Hall current, leading to a sign change of the total spin-Hall current as hole density varies. Furthermore, we also make clear that the disorder-independent spin-Hall effect is a result of an interband polarization directly induced by the dc electric field with contributions from all hole states in the Fermi sea., Comment: 9 pages, 1 figure

We present a quantum Boltzmann equation analysis of the spin-Hall effect in a diffusive Rashba two-dimensional electron system. Within the framework of the self-consistent Born approximation, we consider the roles of disorder-induced quasiclassical relaxation, collisional broadening of the quasiparticles, and the intracollisional field effect in regard to spin-Hall dynamics. We present an analytical proof that the spin-Hall current vanishes, independently of the coupling strength, of the quasiparticle broadening, of temperature and of the specific form of the isotropic scattering potential. A sum relation of the collision terms in a helicity basis is also examined., Comment: final version, 11 pages, no figure

We present a two-band kinetic equation method to investigate the anomalous Hall effect in a Rashba two-dimensional electron system subjected to a homogeneous magnetization. The electron-impurity scattering is taken into account in the self-consistent Born approximation. It is demonstrated that the impurity-density-free anomalous Hall conductivity arises from an intrinsic and a disorder-mediated mechanisms, associated respectively with the electron states under and near the Fermi surface. The intrinsic mechanism relates to a dc-field-induced transition process, or in other words, a linear stationary Rabi process. The disorder-mediated one corresponds to a scattering between impurities and the electrons participating in longitudinal transport. Numerically, the dependencies of the anomalous Hall conductivity on the spin-orbit coupling constants and the strength of the magnetization are demonstrated for both the short- and long-range collisions., Comment: 10 pages, 3 figures

We investigate the spin-Hall effect in a two-dimensional heavy-hole system with Rashba spin-orbit coupling using a nonequilibrium Green's function approach. Both the short- and long-range disorder scatterings are considered in the self-consistent Born approximation. We find that, in the case of long-range collisions, the disorder-mediated process leads to an enhancement of the spin-Hall current at high heavy-hole density, whereas for short-range scatterings it gives a vanishing contribution. This result suggests that the recently observed spin-Hall effect in experiment is a result of the sum of the intrinsic and disorder-mediated contributions. We have also calculated the temperature dependence of spin-Hall conductivity, which reveals a decrease with increasing the temperature., Comment: 5 pages, 2 figures, Typos in the values of hole density corrected

We propose a nonequilibrium Green's function approach to study the spin-Hall effect in a two-dimensional electron system with both the Rashba and Dresselhaus spin-orbit couplings. By taking into account the long-range electron-impurity scattering, the derived kinetic equations are solved numerically. It is found the vanishing of the total zero-temperature dissipationless spin-Hall effect, contributing from the intrinsic and disorder-mediated processes. This result has been examined in the wide ranges of spin-orbit coupling constants and electron density., Comment: 5 pages, 1 figure

A nonequilibrium Green's functions approach to spin-Hall effect is developed in a diffusive two-dimensional electron system with Rashba spin-orbit interaction. In the presence of long-range impurities, the coupled quantum kinetic equations are solved analytically in the self-consistent Born approximation. It is shown that the intrinsic spin-Hall effect stems from the dc-field-induced perturbation of the density of states. In addition, there is an additional disorder-mediated process, which involves the transition of nonequilibrium electrons between two spin-orbit-coupled bands. It results in an additional collision-independent spin-Hall conductivity and leads to the vanishing of the total spin-Hall current even at nonzero temperature., Comment: mistakes in references and formulas corrected

We consider a quantum dot coupled to two BCS superconductors with same gap energies $\Delta$. The transport properties are investigated by means of infinite-$U$ noncrossing approximation. In equilibrium density of states, Kondo effect shows up as two sharp peaks around the gap bounds. Application of a finite voltage bias leads these peaks to split, leaving suppressed peaks near the edges of energy gap of each lead. The clearest signatures of the Kondo effect in transport are three peaks in the nonlinear differential conductance: one around zero bias, another two at biases $\pm 2\Delta$. This result is consistent with recent experiment. We also predict that with decreasing temperature, the differential conductances at biases $\pm 2\Delta$ anomalously increase, while the linear conductance descends., Comment: replaced with revised version

Momentum and energy balance equations are developed for steady-state electron transport and optical absorption under the influence of a dc electric field, an intense ac electric field of terahertz (THz) frequency in a two-dimensional (2D) semiconductor in the presence of a strong magnetic field perpendicular to the 2D plane. These equations are applied to study the intensity-dependent cyclotron resonance (CR) in far-infrared transmission and THz-radiation-induced photoconductivity of GaAs heterostructures in Faraday geometry. We find that the CR peaks and line shapes of the transmittance exhibit different intensity dependence when the intensity of THz field increases in the range above or below a certain critical value. The CR in photoresistivity, however, always enhances with increasing the intensity of the THz field. These results qualitatively agree with the experimental observations. We have clarified that the CR in photoconductivity is not only the result of the electron heating, but also comes from photon-assisted scattering enhancement, especially at high temperatures. The effects of an intense THz field on Faraday angle and ellipticity of magnetically-biased 2D semiconductors have also been demonstrated., Comment: 13 pages, 6 figures. submitted to Physical Review B (August 28, 2002)