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The discovery of superconductivity in infinite-layer nickelates has attracted much attention due to their association to the high-$T_c$ cuprates. Cuprate superconductivity was first demonstrated in bulk samples and subsequently in thin films. In the nickelates, however, the situation has been reversed: although surging as a bulk phenomenon, nickelate superconductivity has only been reported in thin films so far. At the same time, the specifics of infinite-layer nickelates yield distinct interface and surface effects that determine their bulk vs thin-film behavior. In this paper, we provide an overview on these important aspects., Comment: 6 pages, 2 figures. Front. Phys.

Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data., Comment: 21 pages, 6 figures

Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion., Comment: 20 pages

While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or produce emergent spin-orbit effects, which enable efficient spin-charge interconversion. To harness these unique traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive scanning nanomagnetometer based on a single nitrogen-vacancy (NV) defect in diamond, we demonstrate the first real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film, at room temperature. We image the spin cycloid of a multiferroic BiFeO$_3$ thin film and extract a period of $\sim70$ nm, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO$_3$ to manipulate the cycloid propagation direction by an electric field. Besides highlighting the unique potential of NV magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO$_3$ can be used as a versatile platform for the design of reconfigurable nanoscale spin textures.

Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and manipulated by electric fields through room temperature magnetoelectric coupling. Using piezoresponse force microscopy and scanning NV magnetometry in self-organized ferroelectric patterns of BiFeO3, we reveal how strain stabilizes different types of non-collinear antiferromagnetic states (bulk-like and exotic spin cycloids) as well as collinear antiferromagnetic textures. Beyond these local-scale observations, resonant elastic X-ray scattering confirms the existence of both types of spin cycloids. Finally, we show that electric-field control of the ferroelectric landscape induces transitions either between collinear and non-collinear states or between different cycloids, offering perspectives for the design of reconfigurable antiferromagnetic spin textures on demand.

Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect doping is generally much smaller than expected. Here we study the limiting factors through magneto-transport, scanning transmission electron and piezo-response force microscopy in ferroelectric/superconductor (YBa2Cu3O7-{\delta} /BiFeO3) heterostructures, a model system showing very strong field-effects. Still, we find that they are limited in the first place by an incomplete ferroelectric switching. This can be explained by the existence of a preferential polarization direction set by the atomic terminations at the interface. More importantly, we also find that the field-effect carrier doping is accompanied by a strong modulation of the carrier mobility. Besides making quantification of field-effects via Hall measurements not straightforward, this finding suggests that ferroelectric poling produces structural changes (e.g. charged defects or structural distortions) in the correlated oxide channel. Those findings have important consequences for the understanding of ferroelectric field-effects and for the strategies to further enhance them.

Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenue for its implementation in magnetoelectric data storage devices. Here we show the possibility to locally switch on superferromagnetism in a wedge-shaped polycrystalline Fe thin film deposited on top of a ferroelectric and ferroelastic BaTiO3 substrate. A superparamagnetic to superferromagnetic transition is observed for confined regions for which a voltage applied to the ferroelectric substrate induces a sizable strain. We argue that electric-field-induced changes of magnetic anisotropy lead to an increase of the critical temperature separating the two regimes so that superparamagnetic regions develop collective long-range superferromagnetic behavior., Comment: 9 pages, 6 figures, Supp. Info. available at: http://www.ffn.ub.es/oscar/Articles.html

The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical mapping, surface crystallinity and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented., Comment: 15 pages, 9 figures

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO3 and SrTiO3 has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LaAlO3 thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. In this paper, the chemical, electronic, and transport properties of LaAlO3/SrTiO3 samples capped with different metals grown in a system combining pulsed laser deposition, sputtering, and in situ X-ray photoemission spectroscopy are investigated. The results show that for metals with low work function a q2DES forms at 1-2 uc of LaAlO3 and is accompanied by a partial oxidation of the metal, a phenomenon that affects the q2DES properties and triggers the formation of defects. In contrast, for noble metals, the critical thickness is increased above 4 uc. The results are discussed in terms of a hybrid mechanism that incorporates electrostatic and chemical effects., Comment: Work supported by ERC Consolidator grant MINT (Contract No. 615759)

The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be significantly lower than in the bulk, with appealing implications for field-controlled spintronic and magnonic devices., Comment: Work supported by ERC Consolidator grant MINT (Contract No. 615759)

The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab-initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects., Comment: Work supported by ERC Consolidator grant MINT (Contract No. 615759)

The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology - a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitaxial strain engineering to tune the optical response of BiFeO3 thin films, and find a very large variation of the optical index with strain, corresponding to an effective elasto-optic coefficient larger than that of quartz. We observe a concomitant strain-driven variation in light absorption - reminiscent of piezochromism - which we show can be manipulated by an electric field. This constitutes an electrochromic effect that is reversible, remanent and not driven by defects. These findings broaden the potential of multiferroics towards photonics and thin film acousto-optic devices, and suggest exciting device opportunities arising from the coupling of ferroic, piezoelectric and optical responses., Comment: Work supported by ERC Consolidator grant MINT (Contract No. 615759)

The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES., Comment: Final version just published in Nature Materials. Contact author for a reprint

The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements indicate that the Rashba coupling constant increases linearly with electrostatic doping. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.

We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm predicted by continuous medium theory whereas the tetragonal distortion does not change. We resolve this apparent contradiction using first-principles-based effective Hamiltonian calculations. In ultra thin films the energetics of near open circuit electrical boundary conditions, i.e. unscreened depolarizing field, drive the system through a phase transition from single out-of-plane polarization to a nanoscale stripe domains, giving rise to an average remnant polarization close to zero as measured by the electron microscopy whilst maintaining the relatively large tetragonal distortion imposed by the non-zero polarization state of each individual domain., Comment: main article: 5 pages, 6 figures; supplementary materials: 6 pages, 6 figures. Published in Phys. Rev. Lett

In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and transitions from antiferromagnetic to paramagnetic at 360+/-20 K. These coupled ferroic transitions just above room temperature hold promises of giant piezoelectric, magnetoelectric and piezomagnetic responses, with potential in many applications fields.

To face the challenges lying beyond current CMOS-based technology, new paradigms for information processing are required. Magnonics proposes to use spin waves to carry and process information, in analogy with photonics that relies on light waves, with several advantageous features such as potential operation in the THz range and excellent coupling to spintronics. Several magnonic analog and digital logic devices have been proposed, and some demonstrated. Just as for spintronics, a key issue for magnonics is the large power required to control/write information (conventionally achieved through magnetic fields applied by strip lines, or by spin transfer from large spin-polarized currents). Here we show that in BiFeO3, a room-temperature magnetoelectric material, the spin wave frequency (>600 GHz) can be tuned electrically by over 30%, in a non-volatile way and with virtually no power dissipation. Theoretical calculations indicate that this effect originates from a linear magnetoelectric effect related to spin-orbit coupling induced by the applied electric field. We argue that these properties make BiFeO3 a promising medium for spin wave generation, conversion and control in future magnonics architectures., Comment: 3 figures

Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs) remains elusive, although its determination is crucial to understand their remarkable properties. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3, independent of bulk carrier densities over more than seven decades, including the undoped insulating material. This 2DEG is confined within a region of ~5 unit cells with a sheet carrier density of ~0.35 electrons per a^2 (a is the cubic lattice parameter). We unveil a remarkable electronic structure consisting on multiple subbands of heavy and light electrons. The similarity of this 2DEG with those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices, and a novel route to generate 2DEGs at surfaces of transition-metal oxides., Comment: 28 pages, 9 figures

With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi1-xNbxO3 and therefore suggestive of polaronic correlations of the confined carriers. We also determined the vertical density profile which has a strongly asymmetric shape with a rapid initial decay over the first 2 nm and a pronounced tail that extends to about 11 nm., Comment: 4 pages, 3 figures, 1 EPAPS file (3 figures)

Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like'' and ``bubble-like'' polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning probe microscope tip, we observe reversal of both out-of-plane and in-plane components of the polarization, with the final domain state depending on the tip sweeping direction. In ``bubble-like'' samples, complete control of the polarization is achieved, with in-plane polarization change mediated and stabilized by out-of-plane polarization reversal. In ``stripe-like'' samples the intrinsic domain structure influences polarization switching and in-plane reversal may occur without out-of-plane change. The observed switching behaviour can be well correlated with the radial and vertical components of the highly inhomogeneous electric field applied by the tip., Comment: 5 pages, 3 figures

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality., Comment: Accepted for publication in Physical Review Letters

We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with the CoFeB. In view of these results we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3., Comment: submitted to Phys. Rev. Lett

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system., Comment: This updated version contains new experimental data

We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in shape, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the domain size appears not to scale as the square root of the film thickness. A model is proposed in which the observed domain size as a function of film thickness can be directly linked to the fractal dimension of the domains., Comment: 4 pages, 3 figures

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics., Comment: 4 pages, 4 figures. Accepted for publication in Phys. Rev. Lett

A previous study of the growth conditions has shown that single-phase BiFeO3 thin films can only be obtained in a narrow pressure-temperature window and that these films display a weak magnetic moment. Here we study in more detail the structure and the magnetism of single-phase BiFeO3 films by means of reciprocal space mapping, Raman spectroscopy and neutron diffraction. X-ray and Raman data suggest that the BiFeO3 structure is tetragonal for 70 nm-thick films and changes to monoclinic for 240 nm-thick films, thus remaining different from that of the bulk (rhombohedral) structure. In the 240 nm monoclinically distorted film neutron diffraction experiments allow the observation of a G-type antiferromagnetic order as in bulk single crystals. However, the satellite peaks associated with the long-wavelength cycloid present in bulk BiFeO3 are not observed. The relevance of these findings for the exploitation of the magnetoelectric properties of BiFeO3 is discussed., Comment: To appear in Philos. Mag. Lett. In particular, we provide a direct evidence for the spin-cycloid destruction in a BiFeO3 thin film

We have measured the contribution of magnetic domain walls (DWs) to the electric resistance in epitaxial manganite films patterned by electron-beam lithography into a track containing a set of notches. We find a DW resistance-area (RA) product of ~2.5 10^(-13) Ohm/m^2 at low temperature and bias, which is several orders of magnitude larger than the values reported for 3d ferromagnets. However, the current-voltage characteristics are highly linear which indicates that the DWs are not phase separated but metallic. The DWRA is found to increase upon increasing the injected current, presumably reflecting some deformation of the wall by spin-transfer. When increasing temperature, the DWRA vanishes at ~225K which is likely related to the temperature dependence of the film anisotropy.

We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe) exchange bias on a ferromagnetic film of CoFeB, at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training., Comment: 15 pages, 4 figures

LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the doping of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices., Comment: 17 pages, 3 figures

We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as 10000 cm2/Vs at T = 10 K. At high enough applied fields and low enough temperatures (H < 60 kOe, T < 4 K) Shubnikov-de Haas oscillations are also observed. We present an extensive analysis of these quantum oscillations and relate them with the electronic properties of STO, for which we find large scattering rates up to ~ 10 ps. Thus, this work opens up the possibility to inject a spin-polarized current from a high-Curie temperature diluted oxide into an isostructural system with high-mobility and a large spin diffusion length., Comment: to appear in Phys. Rev. B

We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromagnetic with a Curie temperature of ~330K, while the BFO films shows ferroelectricity down to very low thicknesses (5 nm). Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal.

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies., Comment: To appear in Physical Review Letters

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.

We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/STO/Co junctions. We discuss possible reasons for this behaviour., Comment: 14 pages, 3 figures

We report on experiments of spin filtering through ultra-thin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counter-electrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3 K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin filtering effciency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar and 580C. In non-optimal conditions, X-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behaviour, while single-phase films have a low bulk-like magnetic moment. Conductive-tip atomic force microscopy mappings also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures., Comment: sumbitted to Appl. Phys. Lett

We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 / La2/3Sr1/3MnO3 magnetic tunnel junctions. A magnetoresistance ratio of more than 1800 % is obtained at 4K, from which we infer an electrode spin polarization of at least 95 %. This result strongly underscores the half-metallic nature of mixed-valence manganites and demonstrates its capability as a spin analyzer. The magnetoresistance extends up to temperatures of more than 270K. We argue that these improvements over most previous works may result from optimizing the patterning process for oxide heterostructures., Comment: to appear in Applied Physics Letters