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The crystallization by laser of amorphous or microcrystalline silicon films allows to obtain thin, high-quality, polycrystalline Si films, being a very promising method for diminishing costs in the microelectronic and solar cells sectors. During a laser crystallization process, light is partially absorbed in the amorphous silicon film, heating the sample and, if the temperature rises high enough, causing the reorganization of the film structure into a crys- talline one. In this work we show both experimental results on the crystallization of non-hydrogenated silicon thin-films performed by a continuous wave infrared laser are included, as well as a study of the process with a simple finite elements (FEM) numerical model based in the dimensional non-linear heat transfer equation with a steady heat source.

Laser crystallization of amorphous or microcrystalline silicon films to obtain high-quality polycrystalline films is one of the most promising methods for diminishing costs in the microelectronic and solar cells sectors. During a laser crystallization process light is partially absorbed by the amorphous silicon, heating the sample and, if the temperature rises high enough, causing the reorganization of the film structure into a crystalline one. In this work we show results on the crystallization of non-hydrogenated silicon thin-films by a continuous wave infrared laser, as well as a study of the process with a simple finite elements method (FEM) numerical model based in the dimensional non-linear heat transfer equation with a steady heat source.