Search

International audience; Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy techniques. We reveal a factor of 4 shorter characteristic propagation lengths of the spin current at THz frequencies (~ 0.5 nm) as compared to the GHz regime (~ 2 nm) which may be attributed to the ballistic and diffusive nature of electronic spin transport, respectively. The conclusion is supported by an extraction of sub-picosecond temporal dynamics of the THz spin current. We also report on a significant impact of the S2C originating from the IrMn/non-magnetic metal interface which is much more pronounced in the THz regime and opens the door for optimization of the spin control at ultrafast time scales.

We report an alternative mechanism for the physical origin of the temperature-dependent ferromagnetic relaxation of Permalloy (NiFe) thin films. Through spin-pumping experiments, we demonstrate that the peak in the temperature-dependence of NiFe damping can be understood in terms of enhanced spin angular momentum absorption at the magnetic phase transition in antiferromagnetic surface-oxidized layers. These results suggest new avenues for the investigation of an incompletely-understood phenomenon in physics.

The spin–orbit coupling relating the electron spin and momentum allows for spin generation, detection and manipulation. It thus fulfils the three basic functions of the spin field-effect transistor. However, the spin Hall effect in bulk germanium is too weak to produce spin currents, whereas large Rashba effect at Ge(111) surfaces covered with heavy metals could generate spin-polarized currents. The Rashba spin splitting can actually be as large as hundreds of meV. Here we show a giant spin-to-charge conversion in metallic states at the Fe/Ge(111) interface due to the Rashba coupling. We generate very large charge currents by direct spin pumping into the interface states from 20 K to room temperature. The presence of these metallic states at the Fe/Ge(111) interface is demonstrated by first-principles electronic structure calculations. By this, we demonstrate how to take advantage of the spin–orbit coupling for the development of the spin field-effect transistor.

We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) {\alpha}-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of {\alpha}-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into {\alpha}-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it., Comment: 14 pages, 5 figures

We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) ��-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of ��-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into ��-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it., 14 pages, 5 figures

This work provides new developments of the field of spin dynamics in mesoscopic systems. We first discuss, by a few examples, how environmental degrees of freedom affect tunneling and subsequent slow quantum relaxation of large molecule spins (such as Mn 12-AC) or rare-earth (RE) spins (such as Ho diluted in YLiF 4) showing two different facets of the spin bath model. The case of low molecule spins (V 15) is also considered. Then we discuss AC-susceptibility experiments performed on YLiF 4:Ho 3+ allowing to clarify the roles played by the phonon and the spin baths on single-ion and two-ion electro-nuclear tunneling. In the last part, we extend these quantum dynamical studies to the case of Er diluted in CaWO 4 where the spin and phonon baths are weak enough to allow fast and coherent quantum dynamics with the observation of Rabi oscillations. The angular momentum and magnetic moment of Er, J=15/2and 9 μ B, are comparable to those of large molecule spins, implying easy manipulations of potential RE solid-state qubits. © 2006 Elsevier B.V. All rights reserved.