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Silicon doped with Tellurium (Te), a deep level impurity, at concentrations higher than the solid solubility limit (hyperdoping) was prepared by ion-implantation and nanosecond pulsed laser melting. The resulting materials exhibit strong sub-bandgap optical absorption showing potential for room-temperature broadband infrared photodetectors. As a thermodynamically metastable system, an impairment of the optoelectronic properties in hyperdoped Si materials occurs upon subsequent high-temperature thermal treatment. The substitutional Te atoms that cause the sub-bandgap absorption are removed from the substitutional sites to form Te-related complexes. In this work, we explore the phase evolution and the electrical deactivation of Te-hyperdoped Si layers upon furnace annealing through the analysis of optical and microstructural properties as well as positron annihilation lifetime spectroscopy. Particularly, Te-rich clusters are observed in samples thermally annealed at temperature reaching 950 °C and above. Combining the analysis of polarized Raman spectra and transmission electron microscopy, the observed crystalline clusters are suggested to consist of Si2Te3. The defect characterization using positron lifetime spectroscopy suggests the generation of vacancy complexes as a function of temperature, leading to the decrease of sheet carrier concentration.

The realization of fourfold anisotropic magnetoresistance (AMR) in 3d-5d heterostructures has boosted major efforts in antiferromagnetic (AFM) spintronics. However, despite the potential of incorporating strong spinorbit coupling, only small AMR signals have been detected thus far, prompting a search for mechanisms to enhance the signal. In this paper, we demonstrate an extraordinarily elevated fourfold AMR of 70% realized in CaMnO3/CaIrO3 thin film superlattices.We find that the biaxial magnetic anisotropy and the spin-flop transition in a nearly Mott insulating phase form a potent combination, each contributing one order of magnitude to the total signal. Dynamics between these phenomena capture a subtle interaction of pseudospin coupling with the lattice and external magnetic field, an emergent phenomenon creating opportunities to harness its potential in AFM spintronics.

Single quantum dots embedded in the core of freestanding semiconductor nanowires grown directly on Si offer a novel and promising scheme for the realization of on-demand sources of single photons or entangled photon pairs in quantum technology systems. Here, we have investigated the growth mechanism and optical properties of axial quantum dots embedded in GaAs nanowires grown in self-catalyzed vapor-liquid-solid mode while demonstrating the tuneabilty of their emission energy across a wide range of wavelengths with the potential for telecom band access. We have incorporated GaAs complex quantum dots inside GaAs/In(x)Al(1-x)As and GaAs/Al(x)Ga(1-x)As core/shell nanowires grown via our nanowire growth technique called droplet-confined alternate pulsed-epitaxy (DCAPE)[1] (an adaptation of conventional molecular beam epitaxy (MBE)), which grants precise control over the axial growth rate and droplet composition. Using a combination of conventional MBE and DCAPE the growth of highly symmetrical quantum dots, as little as 10 nm in diameter and just a few nanometers in height, were made possible. Strong axial confinement was achieved in the form of a double axial heterostructure by incorporating two Al(x)Ga(1-x)As/Al(y)Ga(1-y)As short-period superlattices separated by a thin GaAs segment (figure 1(a)). The complexity of our quantum dots is derived from the unique possibility of using different ternary alloys for the axial and radial confinement. By introducing a latticed mismatched ternary alloy shell as the radial barrier (In(x)Al(1-x)As), we demonstrated controlled hydrostatic strain induced redshifts of the highly polarized quantum dot emission energy by adjusting the In content of the shell. For 39% In we measured a redshift in the quantum dot emission of 320 meV, from an unstrained quantum dot reference (Al(x)Ga(1-x)As shell), as shown by the photoluminescence measurements in figure 1 (b). To optimize the emission quality, the compositional grading effect of the constituent superlattice materials across the interfaces must be addressed. High-angle annular dark-field scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, and nanowire growth models were utilized to gain an understanding of the compositional grading mechanism at the quantum dot/superlattice interface. We found that interfacial sharpness increases significantly by reducing the superlattice growth temperature and nanowire radius. Notwithstanding, limitations in what can be achieved ensue and possible strategies to overcome them will be presented. [1] Balaghi et al., Nano Lett. 16, 4032 (2016)

We have studied thermally driven magnon spin transport (spin Seebeck e_ect, SSE) in heterostructures of antiferromagnetic Cr2O3 and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector-detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our Cr2O3 films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicates that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport.

Shrt abstract: Using our nanowire growth technique called droplet-confined alternate pulsed-epitaxy, which provides precise control over the axial growth rate and droplet composition, the growth mechanism of self-catalyzed GaAs epitaxial nanowires containing AlxGa1-xAs/AlyGa1-yAs axial short-period superlattices, was systematically examined. Significant increases in interfacial abruptness were confirmed by reducing the nanowire diameter and superlattice growth temperature. Additionally, we found that an unstable droplet contact angle impacts the superlattice growth rate considerably. The unique versatility of our short-period superlattices was tested by using them as axial barriers for GaAs quantum dot heterostructures embedded in nanowires. Furthermore, encapsulating the nanowire in lattice-mismatched shells operating as radial barriers, we demonstrated the tuneabilty of the quantum dot emission energy via strain engineering. Long abstract Short-period superlattices have diverse functionality in electronic and optoelectronic devices. Implementing such systems as axial heterostructures in freestanding semiconducting nanowires further broadens the scope of potential applications, for example: distributed Bragg reflectors, high-efficiency light-emitting diodes, and quantum dot heterostructures. The challenge, however, lies in reducing the compositional grading effect of the constituent superlattice materials across the interfaces in nanowires grown in self-catalyzed vapor-liquid-solid mode. Here, our previously developed nanowire growth technique called droplet-confined alternate pulsed-epitaxy[1] (an adaptation of conventional molecular beam epitaxy), which grants precise control over the axial growth rate and droplet composition, was employed to grow Al(x)Ga(1-x)As/Al(y)Ga(1-y)As axial superlattices in self-catalyzed GaAs nanowires with diameters as thin as 20 nm. High-angle annular dark-field scanning transmission electron microscopy (figure 1(a)), energy-dispersive X-ray spectroscopy, and growth models were utilized to gain an understanding of the compositional grading mechanism. By varying several growth parameters involving growth temperature, nanowire diameter, and droplet contact angle, the link between them and the superlattice characteristics was explored. We found that interfacial abruptness increases significantly by reducing the superlattice growth temperature and nanowire radius. Moreover, we studied the impact of an unstable contact angle on the superlattice growth rate, showing good agreement with analytical growth models and demonstrating the importance of growth rate stability in obtaining reproducible Al contents across successive superlattice periods. We confirmed with monolayer resolution, controlled Al contents in a wide compositional range and superlattice period widths of just a few monolayers (figure 1 (b)). The quality of our short-period superlattices was successfully tested via their employment as axial barriers in quantum dot nanowire heterostructures (figure 1 (c)). Additionally, by introducing a lattice-mismatched ternary alloy shell as the radial barrier (In(x)Al(1-x)As in this case), we demonstrated controlled strain-induced redshifts of the quantum dot emission energy by adjusting the In content of the shell. For 39% In, we measured a redshift in the quantum dot emission of 180 meV as shown by the photoluminescence measurements in figure 1 (d). Notwithstanding, limitations in what can be accomplished are present and possible strategies to overcome them will be presented. [1] Balaghi et al., Nano Lett. 16, 4032 (2016)

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology., 20 pages, 6 figures

Single quantum dots in the core of freestanding semiconductor nanowires is a promising scheme for the realization of on-demand sources of single photons or entangled photon pairs in quantum technology systems. Here, we demonstrate that complex quantum-dots can be grown in self-catalyzed III-As nanowires and their emission can be tuned in a wide range of wavelengths. The quantum dots are formed inside self-catalyzed GaAs nanowires (grown on Si substrates by molecular beam epitaxy) by first growing an axial AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructure in pulsed mode . The AlxGa1-xAs segments are grown as digital alloys with a precise control of the composition, the thickness, and the crystal structure (absence of stacking faults). Then, the nanowires are overgrown all-around with an InxAl1-xAs layer in a core/shell fashion. Owing to the large lattice-mismatch with the shell, the thin core develops tensile hydrostatic strain and the emission from the dot is strongly red-shifted. Furthermore, distinct exciton-biexciton features are identified in photoluminescence measurements.

We report a strong shift of the plasma resonance in highly doped GaAs/InGaAs core/shell nanowires for intense infrared excitation observed by scattering-type scanning near-field infrared microscopy. The studied nanowires show a sharp plasma resonance at a photon energy of about 125 meV in the case of continuous-wave excitation by a CO₂ laser. Probing the same nanowires with the pulsed free-electron laser with peak electric field strengths up to several 10 kV/cm reveals a power-dependent redshift to about 95 meV and broadening of the plasmonic resonance. We assign this effect to a substantial heating of the electrons in the conduction band and subsequent increase of the effective mass in the nonparabolic Γ-valley.

Free-standing nanowires are promising platforms for hosting three-dimensional heterostructures such as single quantum dots for quantum photonics, modulation doped heterostructures for gate-all-around high mobility transistors, etc. The peculiarity of heteroepitaxy in nanowires is the existence of multiple growth interfaces with different crystallographic orientations (usually one top- and six side-facets), where the growth can take place in different modes (e.g. vapor-liquid-solid on the top- and vapor-solid on the side-facets) and can be controlled independently. Furthermore, strained epilayers in nanowires can relax elastically both at the lateral free surface and by stretching the substrate, which in this case are the thin nanowires. All these features open up new possibilities for complex three-dimensional heterostructures with loose strain restrictions. Here, we have investigated the growth of radial and axial heterostructures, as well as combinations of the two, within III-As nanowires. The radial ones consist of thin GaAs nanowires overgrown all-around with an InxAl1-xAs layer in a core/shell fashion. In agreement with theory, the small volume of the core allows for strain engineering both in the core and the shell, and for realization of highly-mismatched/strained heterostructures (with misfits up to 4%) without dislocations. The manipulation of the growth kinetics is necessary in order to suppress strain-driven phenomena, such as the preferential shell-growth and In-incorporation on one side of the core. The axial heterostructures consist of single or multiple GaAs/AlxGa1-xAs quantum dots. The width and the thickness of these dots can be controlled independently. The AlxGa1-xAs segments were grown as digital alloys using pulsed epitaxy in order to achieve sharper interfaces and to avoid the formation of stacking faults. Finally, we realized complex heterostructures with single GaAs/AlxGa1-xAs quantum dots inside the core of core/shell nanowires, aiming at engineering the electronic properties of the dots depending on the composition and thickness of the shell. Besides MBE experiments, our investigations involved transmission electron microscopy (HR-TEM, STEM, EDX, STEM tomography), X-ray diffraction, Raman scattering spectroscopy, and photoluminescence spectroscopy.

We present an approach to mitigate the ion beam induced damage inflicted on semiconductor nano-structures during ion beam irradiation. Nanopillars (with diameter a of 35 nm and height of 70 nm) have been irradiated with both, a 50 keV Si+ broad beam and a 25 keV focused Ne+ beam from a helium ion microscope (HIM). Upon irradiation of the nanopillars at room temperature with a medium fluence (2e16 ions/cm2), strong plastic deformation has been observed which hinders further device integration. This differs from predictions made by the Monte-Carlo based simulations using the TRI3DYN. However, irradiation at elevated temperatures with the same fluence would preserve the shape of the nanopillars. It is well known that a critical temperature exists for silicon above which it will recrystallize during ion beam irradiation. This prevents the amorphization of the target material independent of the applied fluence. At high enough temperatures and not for too high flux this prevents the ion beam hammering and viscous flow of the nano-structures. These two effects are responsible for the shape change observed at low temperature. This has been observed previously mainly for swift heavy ions and energies higher than 100 keV. We used HIM and transmission electron microscopy to follow the morphological evolution of the pillars and their crystallinity. While irradiation at room temperature results in amorphization and the related destruction of the nanopillars, irradiation above 650 K preserves the crystalline nature of the pillars and prevents viscous flow. This effect has been observed previously mainly for swift heavy ions and energies higher than 100 keV. Such high-temperature irradiation, when carried out on a nanopillar with Si/SiO2/Si layer stack, would induce ion beam mixing without suffering from the plastic deformation of the nanostructure. Due to a limited mixing volume, single Si-NCs would form in a subsequent rapid thermal annealing process via Oswald ripening and serve as a basic structure of a gate-all-around single electron transistor device. This work is supported by the European Union’s H-2020 research project ‘IONS4SET’ under Grant Agreement No. 688072.

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator–metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

We present nanoscopic infrared-optical investigations on highly n-type doped GaAs-based nanowires, revealing interesting nonlinear phenomena such as a pronounced redshift of the plasma resonance by the strong THz fields of a free-electron laser.

Ge was deposited on silicon as a superlattice with 10 layers of Ge embedded in Si3N4 or ZrO2 matrices via plasma enhanced chemical vapor deposition or RF-sputtering, respectively. Raman spectroscopy, transmission electron microscopy and capacitance-voltage (CV) measurements were performed in order to investigate the structural and electrical properties of the superlattices. It will be shown that, in contrast to furnace annealing, flash lamp annealing of Ge-ZrO2-superlattices leads to crystalline Ge nanoparticles in an amorphous matrix. As revealed by CV measurements, these layers show excellent charge storage capabilities. In comparison, a higher thermal budget is needed to crystallize Ge in case of Si3N4-based superlattices, and no significant charge trapping could be detected during CV measurements.

A nanofabrication method for the production of ultra-dense planar metallic nanowire arrays scalable to wafer-size is presented. The method is based on an efficient template deposition process to grow diverse metallic nanowire arrays with extreme regularity in only two steps. First, III-V semiconductor substrates are irradiated by a low-energy ion beam at an elevated temperature, forming a highly ordered nanogroove pattern by a “reverse epitaxy” process due to self-assembly of surface vacancies. Second, diverse metallic nanowire arrays (Au, Fe, Ni, Co, FeAl alloy) are fabricated on these III-V templates by deposition at a glancing incidence angle. This method allows for the fabrication of metallic nanowire arrays with periodicities down to 45 nm scaled up to wafer-size fabrication. As typical noble and magnetic metals, the Au and Fe nanowire arrays produced here exhibited large anisotropic optical and magnetic properties, respectively. The excitation of localized surface plasmon resonances (LSPRs) of the Au nanowire arrays resulted in a high electric field enhancement, which was used to detect phthalocyanine (CoPc) in surface-enhanced Raman scattering (SERS). Furthermore, the Fe nanowire arrays showed a very high in-plane magnetic anisotropy of approximately 412 mT, which may be the largest in-plane magnetic anisotropy field yet reported that is solely induced via shape anisotropy within the plane of a thin film.

We propose an ion irradiation based method to fabricate a single Si nanocrystal embedded in a Si(001)/SiO2/Si nanopillar layer stack as a prerequisite for manufacturing a CMOS-compatible, room-temperature Si single electron transistor. After either 50 keV broad beam Si+ or 25 keV focused Ne+ beam from a helium ion microscope (HIM) irradiation of the nanopillars (with diameter of 35 nm and height of 70 nm) at room temperature with a medium fluence (2e16 ions/cm2), strong plastic deformation has been observed which hinders further device integration. This differs from predictions made by the Monte-Carlo based simulations using the program TRI3DYN. We assume that it is the result from the ion beam induced amophisation of Si accompanied by the ion hammering effect. The amorphous nano-structure behaves viscously and the surface capillary force dictates the final shape. To confirm such a theory, ion irradiation at elevated temperatures (up to 672 K) has been performed and no plastic deformation was observed under these conditions. Bright-field transmission electron microscopy micrographs confirmed the crystallinity of the substrate and nanopillars after HT-irradiation. When a semiconductor material such as silicon is heated above its amorphisation critical temperature during ion irradiation, it stays crystalline due to an interplay between ion damage and dynamic annealing process. Viscous flow does not occur for the crystalline nano-structures and the shape remains intact. This effect has been observed previously mainly for swift heavy ions and energies higher than 100 keV. Such high-temperature irradiation, when carried out on a nanopillar with Si/SiO2/Si layer stack, would induce ion beam mixing without suffering from the plastic deformation of the nanostructure. Due to a limited mixing volume, single Si-NCs would form in a subsequent rapid thermal annealing process via Oswald ripening and serve as a basic structure of a gate-all-around single electron transistor device. This work is supported by the European Union’s H-2020 research project ‘IONS4SET’ under Grant Agreement No. 688072.

thin films of antiferromagnets are notably different than bulk crystals.

The transition from a film to a full magnonic crystal is studied by sequentially ion-milling a periodic stripe pattern into a 40 nm thick Ni$_{80}$Fe$_{20}$ film. The spin-wave resonances of each milling stage are detected by ferromagnetic resonance for both in-plain main field axes, i.e. parallel and perpendicular to the stripe pattern. Theoretical calculations and micromagnetic simulations yield the individual mode profiles, which are analyzed in order to track changes of the mode character. The latter is strongly linked to the evolution of the internal demagnetizing field. It’s role is further studied and imaged by electron holography measurements on a hybrid magnonic crystal, which is made with a 10 nm deep surface modulation. The complex effects of mode coupling, mode localization, and anisotropy-like contributions by the internal field are unraveled. Simple transition rules from the $𝑛^_\mathrm{th}$ film mode to the $𝑚\mathrm{th}$ mode of the full magnonic crystal are formulated. This work has been supported by DFG grant KL2443/5-1.

The transition from a film to a full magnonic crystal is studied by sequentially ion-milling a 40 nm Ni80Fe20 film. The spin-wave resonances of each stage are detected by ferromagnetic resonance for both in-plain field main axes. Theoretical calculations and micromagnetic simulations yield the individual mode profiles, which are analyzed in order to track changes of the mode character. The latter is strongly linked to the evolution of the internal demagnetizing field. It’s role is further studied by electron holography measurements of a hybrid magnonic crystal with 10 nm deep surface modulation. The complex effects of mode coupling, mode localization and anisotropy-like contributions by the internal field are unraveled. Simple transition rules from the 𝑛th film mode to the 𝑚th mode of the full magnonic crystal are formulated.

Magnetoelectric and purely antiferromagnetic RAM is shown based on Cr2O3/Pt

A FeRh thin film of 33 nm thickness grown by molecular beam epitaxy (MBE) has been investigated with respect to its temperature dependent magnetic properties by means of ferromagnetic resonance (FMR). Within the ferromagnetic regime, i.e. at temperatures above the antiferromagnetic-to-ferromagnetic phase transition, the resonance field decreases with decreasing temperature reflecting an increasing magnetization. Within the temperature regime of the phase transition, the resonance field behaves non-monotonically, i.e. it suddenly increases with decreasing temperature. The observed asymmetric shape of the FMR absorption line is discussed with respect to a possible small magnetic inhomogeneity of the film coupled to the main ferromagnetic volume of B2 ordered, equiatomic FeRh.

Magnetic systems exhibiting exchange bias effect are being considered as functional parts of modern data storage devices. A model system for the investigation of this effect is an antiferromagnetic-ferromagnetic CoO/Co interface. In this paper we present the studies of magnetic properties of Co-CoO/Au multilayers where the cobalt oxide was formed by oxygen ion beam implantation. Special emphasis is given to the role of the oxygen concentration profile in the magnetic properties. By properly designed the implantation conditions (ion beam energy and fluence) it is possible to fabricate a system revealing controlled stepwise magnetization reversal process. This underlines the great potential of this approach to tailor the magnetic properties through modification of implantation profiles. This work was supported by DAAD Service with contract No. PPP-PL 57214850 „Magnetic anisotropies in cobalt heterostructures induced by oxidation”.

Ge/Si core/shell quantum dots (QDs) recently received extensive attention due to their specific properties induced by the confinement effects of the core and shell structure. They have a type II confinement resulting in spatially separated charge carriers, the electronic structure strongly dependent on the core and shell size. Herein, the experimental realization of Ge/Si core/shell QDs with strongly tunable optical properties is demonstrated. QDs embedded in an amorphous alumina glass matrix are produced by simple magnetron sputtering deposition. In addition, they are regularly arranged within the matrix due to their self-assembled growth regime. QDs with different Ge core and Si shell sizes are made. These core/shell structures have a significantly stronger absorption compared to pure Ge QDs and a highly tunable absorption peak dependent on the size of the core and shell. The optical properties are in agreement with recent theoretical predictions showing the dramatic influence of the shell size on optical gap, resulting in 0.7 eV blue shift for only 0.4 nm decrease at the shell thickness. Therefore, these materials are very promising for light-harvesting applications.

Silicon carbide (SiC) is a wide band-gap semiconductor (6H-SiC with Eg of 3.05 eV) with unique mechanical, electrical, and thermal properties, which make the material suitable for many demanding applications in extreme conditions, such as high temperature, high power, high frequency and high radiation exposure. Two recently reported phenomena related to the defects in SiC are opening the door for semiconductor spintronics and quantum computing: (1) Room temperature ferromagnetism has been observed in neon ion or neutron irradiated both 4H- and 6H-SiC [1, 2]. This is somehow surprising since the materials are transition-metal free, which also gives rise to the term ‘‘d0 ferromagnetism’’. (2) Some defect (including the neutral carbon–silicon divacancy) spin states in 4H-SiC can be optically addressed and coherently controlled up to room temperature [3]. These defect spin states are ideal information carriers for quantum computing. Particle irradiation provides a way to engineer defects in crystalline materials regarding the defect concentration and type. In this contribution, we made a comprehensive investigation on the structural and magnetic properties of ion implanted and neutron irradiated SiC samples. In combination with X-ray absorption spectroscopy, high-resolution transmission electron microscopy and first-principles calculations, we try to understand the mechanism in a microscopic picture. For neon or xenon ion implanted SiC, we identify a multi-magnetic-phase nature [2, 4]. The magnetization of SiC can be decomposed into paramagnetic, superparamagnetic and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. By combining X-ray magnetic circular dichroism and first-principles calculations, we clarify that p-electrons of the nearest-neighbor carbon atoms around divacancies are mainly responsible for the long-range ferromagnetic coupling [5]. Thus, we provide a correlation between the collective magnetic phenomena and the specific electrons/orbitals. For neutron irradiated SiC, we observe a strong paramagnetism, scaling up with the neutron fluence [6]. A weak ferromagnetic contribution only occurs in a narrow fluence window or after annealing. The interaction between the nuclear spin and the paramagnetic defect can effectively tune the spin-lattice relaxation time (T1) as well as the nuclear spin coherent time (T2). For the sample with the largest neutron irradiation fluence, T1 and T2 are determined to be around 520 s and 1 ms at 2K, respectively. [1] Y. Liu, et al., Phys. Rev. Lett. 106, 087205 (2011). [2] L. Li, et al., Appl. Phys. Lett. 98, 222508 (2011). [3] W. Koehl, et al., Nature 479, 84 (2011). [4] Y. Wang, et al., Phys. Rev. B 89, 014417 (2014). [5] Y. Wang, et al., Scientific Reports, 5, 8999 (2015). [6] Y. Wang, et al., Phys. Rev. B 92, 174409 (2015).

We present nanoscopic studies on MBE-grown GaAs-InGaAs core-shell nanowires (NWs) with various Si-doped shells. For higher dopings and charge carrier densities, the plasmonic resonance shifts into the mid-infrared wavelength range, that can be fully probed using IR radiation from the FELBE free-electron laser source at the Helmholtz-Center Dresden-Rossendorf. Exploring these plasmonic resonance peaks at different wavelengths allows mapping the local charge carrier density and distribution along the NW with a high spatial resolution of better than 50 nm. Preliminary results using a CO2 laser scanned from 9.7-11.4 μm indicated the resonant behavior for the highest shell doping, in clear contrast to lower or undoped NWs. In the resonant case, the near-field (NF) emerging from the NW is strongly increased as compared to the substrate, in accordance with theory. The NF profiles of particular NWs show characteristic modifications at different wavelengths, which indicate an inhomogeneous distribution of the charge carrier density.

The core/shell nanowire (NW) geometry is suitable for the pseudomorphic growth of highly mismatched semiconductor heterostructures, where the shell thickness can exceed significantly the critical thickness in equivalent planar heterostructures. We have investigated the accommodation of misfit strain in self-catalyzed GaAs/(In,Ga)As core/shell NWs grown on Si (111) substrates by molecular beam epitaxy. The NWs have their axis along the [111] crystallographic direction, six {11 ̅0} sidewalls, and their crystal structure is predominantly zinc blende. For strain analysis, we used Raman scattering spectroscopy, transmission electron microscopy, X-ray diffraction and photoluminescence spectroscopy. Within a certain range of core/shell dimensions and shell composition, our findings reveal that the elastic energy in NWs without misfit dislocations can be confined exclusively inside the core, allowing for the shell to be strain-free. The experimental results are also compared with theoretical simulations of the strain (continuum elasticity theory) and phonon energy (density functional theory).

Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing (PLA). We present a systematic investigation on the evolution of microstructure and magnetic properties depending on the pulsed laser annealing energy. The sample microstructure was analyzed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), ultraviolet Raman spectroscopy (UV-RS), and extended X-ray absorption fine structure (EXAFS) spectroscopy. The presence of X-ray Pendellösung fringes around GaP (004) and RBS channeling prove the epitaxial structure of the GaMnP layer annealed at the optimized laser energy density (0.40 J/cm2). However, a forbidden TO vibrational mode of GaP appears and increases with annealing energy, suggesting the formation of defective domains inside the layer. These domains mainly appear in the sample surface region and extend to almost the whole layer with increasing annealing energy. The reduction of the Curie temperature (TC) and of the uniaxial magnetic anisotropy gradually happens when more defects and the domains appear as increasing the annealing energy density. This fact univocally points to the decisive role of the PLA parameters on the resulting magnetic characteristics in the processed layers, which eventually determine the magnetic (or spintronics) figure of merit.

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes of these novel AF-MERAM elements, we construct a comprehensive model of the magnetoelectric selection mechanism in thin films of magnetoelectric antiferromagnets. We identify that growth induced effects lead to emergent ferrimagnetism, which is detrimental to the robustness of the storage. After pinpointing lattice misfit as the likely origin, we provide routes to enhance or mitigate this emergent ferrimagnetism as desired. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in purely antiferromagnetic spintronics devices. In particular, the read out of the magnetic state is realized by Zero-Offset Hall [Kosub et al., Phys. Rev. Lett. 115, 097201 (2015)] which can detect the proximity magnetization that developes in metallic electrodes at the boundary of insulating antiferromagnets. This technique possesses considerable applicability to the field of antiferromagnetic spintronics, as it can probe the net magnetization of both metallic and insulating antiferromagnetic thin films.

Defect induced magnetism, which can be controllably generated by ion or neutron irradiation, is attracting intensive research interest. It not only challenges the traditional opinions about magnetism, but also has some potential applications in spin-electronics. SiC is a new candidate for the investigation of defect-induced ferromagnetism after graphitic materials and oxides due to its high material purity and crystalline quality [1, 2]. In this contribution, we made a comprehensive investigation on the structural and magnetic properties of ion implanted and neutron irradiated SiC samples. In combination with X-ray absorption spectroscopy, high-resolution transmission electron microscopy and first-principles calculations, we try to understand the mechanism in a microscopic picture. For neon or xenon ion implanted SiC, we identify a multi-magnetic-phase nature [3]. The magnetization of SiC can be decomposed into paramagnetic, superparamagnetic and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. By combining X-ray magnetic circular dichroism and first-principles calculations, we clarify that p-electrons of the nearest-neighbor carbon atoms around divacancies are mainly responsible for the long-range ferromagnetic coupling [4]. Thus, we provide a correlation between the collective magnetic phenomena and the specific electrons/orbitals. With the aim to verify if a sample containing defects through its bulk volume can persist ferromagnetic coupling, we applied neutron irradiation to introduce defects into SiC [5]. Besides a weak ferromagnetic contribution, we observe a strong paramagnetism, scaling up with the neutron fluence. The ferromagnetic contribution only occurs in a narrow fluence window or after annealing. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Although both Raman scattering and X-ray diffraction reveal essential structure damage to SiC due to irradiation, high-resolution transmission electron microscopy does not detect significant structural variation even upon the largest neutron fluence. [1] L. Li, et al., Appl. Phys. Lett. 98, 222508 (2011). [2] Y. Wang, et al., Phys. Rev. B 90, 214435 (2014). [3] Y. Wang, et al., Phys. Rev. B 89, 014417 (2014). [4] Y. Wang, et al., Scientific Reports, 5, 8999 (2015). [5] Y. Wang, et al., Phys. Rev. B 92, 174409 (2015).

An all-electrical method is presented to determine the exchange constant of magnetic thin films using ferromagnetic resonance. For films of 20 nm thickness and below, the determination of the exchange constant A, a fundamental magnetic quantity, is anything but straightforward. Among others, the most common methods are based on the characterization of perpendicular standing spin-waves. These approaches are however challenging, due to (i) very high energies and (ii) rather small intensities in this thickness regime. In the presented approach, surface patterning is applied to a permalloy (Ni80Fe20) film and a CFMS (Co2Fe0.4Mn0.6Si) Heusler compound. Acting as a magnonic crystal, such structures enable the coupling of backward volume spin-waves to the uniform mode. Subsequent ferromagnetic resonance measurements give access to the spin-wave spectra free of unquantifiable parameters, and thus, to the exchange constant A with high accuracy.

The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here, we present room-temperature photoluminescence and ellipsometry measurements of Ga100%−xMnxAs alloy. The upshift of the valence band is proven by the redshift of the room temperature near band-gap emission from the Ga100%−xMnxAs alloy with increasingMn content. It is shown that even a doping by 0.02% of Mn affects the valence-band edge, and it merges with the impurity band for a Mn concentration as low as 0.6%. Both x-ray diffraction pattern and high-resolution cross-sectional transmission electron microscopy images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.

Semiconductor nanocrystals in dielectric matrices are of great interest for a broad range of applications, especially in the field of photon management in solar cells and for non-volatile memories. In this work we investigate the formation of crystalline Ge nanoparticles in superlattice stacks by flash lamp annealing. In detail, amorphous ZrO2/Ge and SiN/Ge superlattices confined by two SiO2 layers on Si were produced by magnetron-sputtering and plasma-enhanced chemical vapor deposition, respectively. Raman and TEM investigations reveal that, depending on the original Ge layer thickness, crystalline Ge nanoparticles with different aspect ratios will be formed under annealing. As shown by electrical measurements, these layers feature large charge trapping capabilities. We compare these two types of layer systems with regard to the formation process of the Ge nanoparticles, the trapped charge density, the memory window and the retention. Finally, the perspectives for non-volatile memories are discussed, if these layer stacks are downscaled to current device dimensions.

The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at.%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at.% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.