Search

Your search keyword '"Microwave Lab ' showing total 4 results
Start Over Author "Microwave Lab Topic computingmilieux_miscellaneous
4 results on '"Microwave Lab '

1. Creep behavior of submicron copper films under irradiation

Author

Fabien Onimus, Jean-Pierre Raskin, Pierre Lapouge, Thomas Pardoen, Michaël Coulombier, Yves Bréchet, CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Catholique de Louvain = Catholic University of Louvain (UCL), Microwave Lab, UCL, CeRMiN, Research Center in Micro and Nanoscopic Materials and Electronic Devices, Science et Ingénierie des Matériaux et Procédés (SIMaP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, and UCL - SST/IMMC/IMAP - Materials and process engineering

Subjects
010302 applied physics, Materials science, Polymers and Plastics, Orders of magnitude (temperature), Metals and Alloys, 02 engineering and technology, Plasticity, 021001 nanoscience & nanotechnology, Microstructure, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Electronic, Optical and Magnetic Materials, Stress (mechanics), MEMS, Deformation mechanism, Creep, 0103 physical sciences, Ceramics and Composites, Forensic engineering, Irradiation, Composite material, Deformation (engineering), 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

The creep behavior under heavy ion irradiation of 200 nm and 500 nm thick annealed Cu films is characterized using on chip uniaxial microtensile test structures. The tests are performed at room temperature with an applied stress between 100 and 250 MPa and a damage rate of 5 × 10−4 and 6.3 × 10−4 dpa s−1. The deformation rates produced under irradiation are several orders of magnitude larger than when measured out of flux. The main advantage of this method is that it allows the simultaneous measurement of several tens of specimens fully irradiated over their entire thickness. The plasticity mechanisms appear remarkably more homogeneous during irradiation creep than under static loading. The creep power law involves a stress exponent equal to 5 depending only weakly on the microstructure of the films. The SEM and TEM microstructural observations suggest that the creep mechanism results from climb-assisted glide of dislocations as rationalized by a simple closed-form model.

Published
2017
Full Text
View/download PDF

2. Porous Si as a substrate material for RF passive integration

Author

K. Ben Ali, J-P Raskin, Emmanouel Hourdakis, Androula G. Nassiopoulou, Panagiotis Sarafis, H. Issa, C. Roda Neve, Philippe Ferrari, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Microwave Lab, UCL, and Michelin, Isabelle

Subjects
Materials science, Silicon, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 7. Clean energy, law.invention, law, Electrical resistivity and conductivity, 0103 physical sciences, Wafer, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Electrical engineering, 021001 nanoscience & nanotechnology, chemistry, Attenuation coefficient, Optoelectronics, 0210 nano-technology, business, Porous medium, Layer (electronics), Waveguide
Abstract

Thick porous Si layers locally formed on a low resistivity Si wafer were studied for their application in on-chip RF device integration. A comparison was made between the above porous Si substrate and trap-rich high resistivity Si (trap-rich HR Si), which constitutes a state-of-the-art substrate for RF integration, by integrating identical co-planar waveguide transmission lines (CPW TLines) on both porous Si layer/low resistivity Si and trap-rich high resistivity Si. It was showed that signal attenuation on the porous Si layer is 30% lower than on trap-rich HR Si. This suggests lower losses or better RF shielding in the case of porous Si. In addition, CPW TLines were designed and realized on porous Si substrate for the frequency range 1-110GHz. The measured attenuation constant at 60 and 110GHz was respectively 0.33 and 0.55 dB/mm. This result competes very well with the best literature results on CMOS integrated transmission lines, even though the metal lines in the case of the porous Si substrate were not optimized.

Published
2013

3. Behaviour of CPW and TFMS lines at high temperature for RF applications in sub-45 nm nodes

Author

C. Roda Neve, B. Blampey, P. Meuris, L. Arnaud, M. Gallitre, J-P Raskin, Alexis Farcy, STMicroelectronics, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CLIPS, EDGE, Laboratoire de glaciologie et géophysique de l'environnement (LGGE), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire des Sciences de l'Univers de Grenoble (OSUG), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut national des sciences de l'Univers (INSU - CNRS)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire des Sciences de l'Univers de Grenoble (OSUG), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut national des sciences de l'Univers (INSU - CNRS)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Microwave Lab, UCL, European Project, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Observatoire des Sciences de l'Univers de Grenoble (OSUG), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Observatoire des Sciences de l'Univers de Grenoble (OSUG), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etudes Aérodynamiques (LEA), Centre National de la Recherche Scientifique (CNRS)-ENSMA-Université de Poitiers, Université Catholique de Louvain = Catholic University of Louvain (UCL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Domenget, Chahla, Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), and UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

Subjects
45 nm Node, Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Interconnects, 02 engineering and technology, Dielectric, 7. Clean energy, 01 natural sciences, Microstrip, ULK, Temperature behaviour, Transmission line, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Propagation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, HF measurements, Attenuation, Coplanar waveguide, Low-k dielectric, 020206 networking & telecommunications, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Electric power transmission, Frequency domain, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business
Abstract

Coplanar waveguide (CPW) and thin film microstrip (TFMS) lines integrating porous ultra low-k as inter-metal dielectric layers (k=2.5) and copper as metal, are for the first time experimentally measured up to 110GHz and under different temperature conditions, up to 200^oC. The extracted attenuation and propagation coefficients of those transmission lines are compared to simulations performed with MAGWEL software, a frequency domain 3-D Maxwell solver. Based on the characterization results some guidelines related to interconnect design are presented for future applications.

Published
2010
Full Text
View/download PDF

4. New MEMS-based nanomechanical testing laboratory - application to aluminium, titanium, polysilicon and silicon nitride thin films

Author

Gravier, S., Coulombier, M., Safi, A., André, N., Raskin, J.-P., Pardoen, T., Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Catholique de Louvain = Catholic University of Louvain (UCL), Prof. Espinosa Micro & Nanomechan Lab., Northwestern University, Centre d'étude spatiale des rayonnements (CESR), Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Microwave Lab, and UCL

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2009

Catalog

Books, media, physical & digital resources
See catalog results