1. Proton-Induced Single-Event Degradation in SDRAMs.
- Author
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Rodriguez, Axel, Wrobel, Frederic, Samaras, Anne, Bezerra, Francoise, Vandevelde, Benjamin, Ecoffet, Robert, Touboul, Antoine, Chatry, Nathalie, Dilillo, Luigi, and Saigne, Frederic
- Subjects
IRRADIATION ,DYNAMIC random access memory ,SINGLE event effects ,FAULT-tolerant computing ,COMPUTER system failures - Abstract
Retention time and cell functionality degradation under proton irradiation is studied for SDRAM references that exhibit in-flight faulty behavior on satellites. Proton irradiation, with an adapted test protocol, allows to reproduce these effects and to gain a valuable insight on this phenomenon. Data acquired allow for a physical interpretation of the degradation, which results of one or more damage clusters created by a single particle. [ABSTRACT FROM PUBLISHER]
- Published
- 2016
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