1. A 25-Gb/s `CDR in 90-nm CMOS for High-Density Interconnects.
- Author
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Kromer, Christian, Sialrn, Gion, Menolfi, Christian, Schmatz, Martin, Ellinger, Frank, and Jäckel, Heinz
- Subjects
COMPLEMENTARY metal oxide semiconductors ,DATA recovery ,PHASE detectors ,ELECTRIC distortion ,INTEGRATED circuits ,INTEGRATED circuit interconnections - Abstract
This paper presents a clock-and-data recovery (CDR) for pseudo-synchronous high-density link applications. The CDR is a first-order bang-bang (BB) topology implemented in a standard CMOS process and consists of a phase interpolator, a linear half-rate phase detector, an analog filter followed by a limiter and a digital loop filter operating at a reduced clock rate. A detailed BB CDR analysis derives the maximum tracking range, slew-rate limited jitter tolerance and maximum loop delay. The circuit is optimized for high speed as well as low area and power consumption. The CDR operates from 8-28 Gb/s at a BER of <10
-12 and tracks frequency deviations between the incoming data and the reference clock of up to ±122 ppm. The sinusoidal jitter tolerance is >0.35 UIPP for jitter frequencies ≤100 MHz and the total timing jitter of the recovered half-rate output data amounts to 0.22 UIPP , at a BER = 10-12 . The core CDR circuit occupies a chip area of 0.07 mm² and consumes 98 mW from a 1.1-V supply. [ABSTRACT FROM AUTHOR]- Published
- 2006
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