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Your search keyword '"Hayes, D. G."' showing total 1 results
Start Over Author "Hayes, D. G." Topic complementary metal oxide semiconductors
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1. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications.

Author

Ashley, T., Buckle, L., Datta, S., Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Martin, T., Phillips, T. J., Wallis, D. J., Wilding, P. J., and Chau, R.

Subjects
QUANTUM wells, ENERGY-band theory of solids, SILICON, SILICON compounds, INDIUM compounds, COMPLEMENTARY metal oxide semiconductors
Abstract

The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with fT=305 GHz at Vds=0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 µm thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic applications has been achieved. [ABSTRACT FROM AUTHOR]

Published
2007
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