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Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer. [ABSTRACT FROM AUTHOR]

Three-dimensional (3D) poly(3,4-ethylenedioxythiophene) (PEDOT) films were demonstrated as an efficient Pt-free catalyst in dye-sensitized solar cells (DSSCs). The 3D PEDOT films were fabricated by the deposition of a polystyrene (PS) bead (diameter=1µm) monolayer on fluorine-doped tin oxide (FTO) glass, followed by electrochemical polymerization (EP) of ethylenedioxythiophene (EDOT) monomer. For comparison, a flat PEDOT film and Pt counter electrodes were additionally prepared by solution casting polymerization (SCP) and the thermal reduction of a spin-coated H2PtCl6solution, respectively. When these films were implemented as counter electrodes in quasi-solid-state DSSCs with a nanogel electrolyte, the cell efficiency of the 3D PEDOT film prepared by EP for 30sec reached 5.05%, which is higher than those of the flat PEDOT (4.11%) and Pt counter electrode (4.59%). The improved efficiency of the 3D PEDOT-based cell is attributed to its higher electrocatalytic performance and improved light reflectance, as determined by cyclic voltammogram (CV), incident photon-to-current efficiency (IPCE), and electrochemical impedance spectroscopy (EIS) analyses. [ABSTRACT FROM AUTHOR]