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© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The use of Resistive Random Access Memory (RRAM) devices is becoming pervasive in many applications. In particular, security based primitives can exploit their variability and non-volatility for generating cells for Non-Volatile Secure Memory (NVSM) and Physically Unclonable Function (PUF). Stanford-PKU Resistive Random Access Memory (RRAM) model is a successful model that has been used for simulating different types of RRAM-based systems. However, some circuit-related problems appear when more than one device are coupled together. In this paper, a parameter fitting is performed for a real TiN/Ti/HfO 2 /W RRAMs and the statistical characteristics of the variability in the experimental data are analyzed and included in order to obtain a more reliable model for simulations. This work was supported in part by the Spanish Ministry of Science, Innovation and Universities under Grant PID2019-103869RB-C33/ AEI /10.13039/501100011033, and through FEDER funds under Grant TEC2017- 84321-C4-1-R. Peer Reviewed Objectius de Desenvolupament Sostenible::9 - Indústria, Innovació i Infraestructura