Search

An optical tunable transmitter is used to transmit multiple radio frequency bands on a single beam. More specifically, a tunable laser is configured to generate a plurality of optical wavelengths, and an optical tunable transmitter is configured to modulate each of the plurality of optical wavelengths with a corresponding radio frequency band. The optical tunable transmitter is also configured to encode each of the plurality of modulated optical wavelengths onto a single laser beam for transmission of a plurality of radio frequency bands using the single laser beam.

As the demand for multiple radio frequency carrier bands continues to grow in space communication systems, the design of a cost-effective compact optical transmitter that is capable of transmitting selective multiple RF bands is of great interest, particularly for NASA Space Communications Network Programs. This paper presents experimental results that demonstrate the feasibility of a concept based on an optical wavelength division multiplexing (WDM) technique that enables multiple microwave bands with different modulation formats and bandwidths to be combined and transmitted all in one unit, resulting in many benefits to space communication systems including reduced size, weight and complexity with corresponding savings in cost. Experimental results will be presented including the individual received RF signal power spectra for the L, C, X, Ku, Ka, and Q frequency bands, and measurements of the phase noise associated with each RF frequency. Also to be presented is a swept RF frequency power spectrum showing simultaneous multiple RF frequency bands transmission. The RF frequency bands in this experiment are among those most commonly used in NASA space environment communications.

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

This reference publication introduces forward error correcting (FEC) and stresses definitions and basic calculations for use by engineers. The seven chapters include 41 example problems, worked in detail to illustrate points. A glossary of terms is included, as well as an appendix on the Q function. Block and convolutional codes are covered.