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We report a technique to prepare top and bottom oxide electrodes of LaNiO3 (LNO) for lead zirconate titanate (PZT) films using a chemical solution deposition. LNO/PZT/LNO sandwich structures were prepared on platinized silicon by spin coating combined with rapid thermal annealing. Pt dots were sputtered on top of LaNiO3 film to serve as protective masks during etching of the uncovered LaNiO3 layer using dilute hydrochloric acid. For comparison, Pt/PZT/Pt capacitors were also prepared using the same processing conditions. Electrical measurements were carried out on both Pt/LNO/PZT/LNO/Pt and Pt/PZT/Pt structures. The remnant polarizations and coercive fields for these two capacitors are 17.4 and 21.4 μC/cm2, 71 and 81.5 kV/cm respectively at 5 V. The leakage current density for the Pt/LNO/PZT/LNO/Pt structure is about 1.38×10-6 A/cm2 at 5 V, which is lower than that of PZT deposited on Pt electrode. After 109 bipolar switching cycles, no significant change in remnant polarization was observed in the Pt/LNO/PZT/LNO/Pt capacitor, in comparison to the Pt/PZT/Pt capacitor which lost more than 50% of its original remnant polarization. [ABSTRACT FROM AUTHOR]

Presents details about pulsed laser deposition growth and electrical characterization of antimony sulpho-iodide (SbSI) films. Crystallinity and orientation of the films; Determinants of the presence of ferroelectricity in the SbSi film; Cause of the film's transition to paraelectric state.