1. Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of nMOSFETs.
- Author
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Zhang, E. X., Fleetwood, D. M., Pate, N. D., Reed, R. A., Witulski, A. F., and Schrimpf, R. D.
- Subjects
TIME-domain reflectometry ,METAL oxide semiconductor field-effect transistors ,IONIZING radiation dosage ,IRRADIATION ,ELECTROMAGNETIC measurements - Abstract
We have performed time-domain reflectometry (TDR) measurements on nMOSFETs before and after irradiation on time scales relevant to MOS radio-frequency response. The decrease in effective impedance of MOSFETs with ionizing radiation exposure is greater for transistors biased in the off-state (all pins grounded) during TDR measurement than for transistors biased in the on-state (V_G high and the other terminals grounded). The increased admittance after irradiation is observable primarily in the off-state measurement. The increases in admittance (decreases in effective impedance) with TID correlate closely with decreases in trans-resistance at 0 V. These decreases result from increases in radiation-induced oxide-trap charge and interface-trap charge in the gate and/or shallow-trench isolation oxides. [ABSTRACT FROM PUBLISHER]
- Published
- 2013
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