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Samples of Nickel-Zinc ferrite, Ni1−xZnxFe2O4 (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), were synthesized by a solid state reaction method. The morphology of four of the samples (x = 0.0, 0.4, 0.6 and 1.0) was observed with 3D X-ray imaging. The distortion caused by the increase of zinc in the ferrite structure and the respective movement of the trivalent (Fe) and divalent (Ni) ions from the tetrahedral- to the octahedral-sites cause some vacancies which act as positron traps. Doppler broadening of annihilation radiation experiments have been performed with a variable energy monoenergetic positron beam. The positron results as a function of the energy/depth implantation are presented in this work.

Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 1018 cm−3 was achieved simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.

Cadmium zinc telluride (CZT) possesses excellent material properties for a wide range of applications where room temperature operability, durability, and high efficiency are required. However, because CZT is a challenging material to produce in useful quantities, the growth and fabrication costs have remained high, creating an economic challenge for vendors. While the traveling heater method (THM) is the predominant means of commercial CZT crystal growth, the vertical Bridgman method (VB) is an attractive alternative due to its relatively fast growth rate. However, VB grown CZT has yet to compete with THM grown CZT, particularly in terms of charge collection efficiencies, where the charge collection efficiency is characterized by the single carrier electron mobility lifetime (μτe) product. Despite efforts to overcome this discrepancy, the μτe product in VB grown CZT has remained an order of magnitude lower than THM. Eliminating this difference would bring VB one step closer to outpacing THM in terms of economic feasibility. This paper discusses the development of a unique technique that combines the advantages of both growth methods to better understand this discrepancy and the underlying mechanisms behind it. CZT ingots were grown from melt via VB with highly off-stoichiometric concentrations of tellurium (Te). Melt mixing via accelerated crucible rotation (ACRT) was applied to compensate for any negative effects associated with off-stoichiometry, i.e. flux inclusions. CZT material has been produced at growth rates commensurate with VB (one ingot/week) and with charge collection efficiencies commensurate with THM (mid 10−2 cm2/V) in long bars typical of commercial applications.

Co-doping with divalent elements is known to improve the light yield and decay times of some cerium-activated scintillators, despite the stabilization of tetravalent Ce4+, previously believed to be non-luminescent, from the Ce3+ state. Ce4+ stabilization is a charge compensation mechanism which results from divalent ion substitution of a 3 + site. To elucidate the underlying mechanisms, which remain poorly understood, we have grown three Ce,Ca:YAG crystals with different amounts of calcium co-dopants by the Czochralski method and characterized their scintillation and defect properties. Calcium co-doping reduces the decay times and stabilizes the formation of Ce4+ as expected. Interestingly, X-ray fluorescence analysis reveals a decreased concentration of cerium within the YAG crystal for the sample doped with high levels of Ca, which could contribute to the observation that scintillator properties are improved only for low levels of Ca co-doping. Additionally, positron annihilation spectroscopy reveals an increase in the concentration of vacancies with increasing Ca concentration, while thermoluminescence is observed to show no detectable signal. Furthermore, room temperature photoluminescence of the Ce 4f to 5d1 transition demonstrates decreased emission with increasing Ca co-doping. These data suggest that Ca co-doping decreases the decay time by creating defects with non-radiative decay pathways.

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 µs, carrier concentration of more than 5×l015cc−1 and external radiative efficiency of over 2 % in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm−3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×1017 cm−3-1×1018cm−3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

Cu doping of CdTe has enabled reasonable device performance, but has some significant drawbacks, including limited achievable carrier concentration and high mobility in the CdTe films. Group V elements, on the other hand, are expected to facilitate higher carrier concentration and expected to have low mobility. Consequently, incorporate of As in CdTe is of great interest to the CdTe community. Here, we deposited CdTe from the CdTe:As feedstock to complete devices. We demonstrate that the As diffuses through the CdTe absorber layer and accumulates at the front and back interfaces with Cl activation. Current density-voltage and capacitance-voltage measurements indicate that the devices have low carrier concentration, even though the concentration of As is high. These results indicate that the process employed here was insufficient to activate the As doping.

We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al2O3/CdTe structures with CdCl2 and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al2O3. Direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms.

By using positron annihilation spectroscopy methods, we have experimentally demonstrated the creation of isolated zinc vacancy concentrations >1020 cm−3 in chemical vapor transport (CVT)-grown ZnO bulk single crystals. X-ray diffraction ω-rocking curve (XRC) shows the good quality of ZnO single crystal with (110) orientation. The depth analysis of Auger electron spectroscopy indicates the atomic concentrations of Zn and O are almost stoichiometric and constant throughout the measurement. Boltzmann statistics are applied to calculate the zinc vacancy formation energies (Ef) of ~1.3–1.52 eV in the sub-surface micron region. We have also applied Fick’s 2nd law to calculate the zinc diffusion coefficient to be ~1.07 × 10−14 cm2/s at 1100 °C. The zinc vacancies began annealing out at 300 °C and, by heating in the air, were completely annealed out at 700 °C.

Research is described here that is directed toward obtaining p-type ZnO crystals either by doping or by creating native defects. Theoretically, zinc vacancies are shallow acceptors that should allow for p-type conduction. Bulk ZnO crystals can be grown by chemical vapor transport (CVT), melt solidification, and hydrothermal methods. Here we have explored annealing processes with the goal of creating zinc vacancies in bulk ZnO crystals. Positron annihilation spectra reveal the reproducible formation of high concentrations (>1020 cm−3) of isolated zinc vacancies (VZn) in oxygen-annealed, CVT-grown ZnO crystals in the ∼100–150 nm near-surface. Melt- and hydrothermally grown samples, in contrast, show insignificant levels of zinc vacancy creation. Photoluminescence (PL) emission spectra indicate a VZn(0/-1) acceptor level at ∼ 155–165 meV; red PL (∼1.7 eV) emission, related to the VZn(-1/-2) level, was also observed. Infrared absorption spectroscopy reveals the presence of a zinc vacancy complex with a hole binding energy range of 420–450 meV – and with a continuum suggesting a p-type region. XPS measurements support the deficiency of Zn after oxygen annealing the CVT-grown ZnO single crystal.

A 4MV Van de Graaff accelerator was used to induce the nuclear reaction 12 C(d,n) 13 N in order to produce an intense beam of positrons. The graphite target was heated so the radioactive 13 N would desorb from the bulk into the vacuum. This radioactive gas is frozen onto a cryogenic freezer where it decays to produce an antiparticle beam of positrons. This high current beam is then guided into a superconducting magnet with field strength up to 7 Tesla where the positrons will be stored in a newly designed Micro-Penning-Malmberg trap. Several source geometries have been experimented on and found a maximum antimatter beam with a positron flux of greater than 0.55 ± 0.03 × 10 6 e + s −1 was achieved. This beam was produced using a solid rare gas moderator composed of krypton (Kr) at a temperature of 25 ± 5 K. Due to geometric restrictions on this set up and other loss mechanisms, 10 7 –10 8 e + s −1 of the total number of positrons are lost. Simulations and preliminary experiments suggest a new geometry, currently under testing, will produce a beam of 10 7 e + s −1 or more. The setup and preliminary results for the new geometry will be discussed as well.

In this study, the formation and character of gallium vacancies (VGa) and their complexes in near surface and bulk regions of single crystal β-Ga2O3 were explored using unintentionally doped single crystals grown by the Czochralski method. As-grown and O2 annealed (up to 1550 °C) samples were investigated using positron annihilation spectroscopy (PAS) to study the top 0.05–6 μm, and also current–voltage measurements and infrared (IR) spectroscopy, with hydrogenated samples to probe VGa, to study the bulk. After annealing in O2 > 1000 °C, the β-Ga2O3 resistivity begins increasing, up to ∼109 Ω cm for 1550 °C treatment, with the top 0.5 mm being many orders of magnitude more resistive. PAS measurements of the top 6 μm (S values) and very near surface 200 nm (diffusion length, L) indicate differential behavior as a function of peak annealing temperature. At least four temperature regimes of behavior are described. VGa are present in the bulk after growth, but considerable changes occur upon annealing at a temperature ≈1000 °C, where L and S decrease simultaneously, suggesting an increasing defect concentration (L) but a decreasing defect volume (S). Annealing at a temperature ≈1400 °C increases S again, showing an increasing volume concentration of VGa, with IR absorption showing a large signature of VGa-2H, indicative of increased VGa formation that was not present when annealing at a temperature ≈1000 °C. These results suggest that defect changes from annealing in oxygen are depth dependent, and that VGa configuration may not be the same near the oxygen-exposed surface of the sample and in the bulk.

In this study, LiAlO2 crystals doped with rare-earth elements and Ti were produced by the CZ method and spectroscopic and neutron detection properties were investigated. Photoluminescence revealed no clear luminescent activation of LiAlO2 by the rare-earth dopants though some interesting luminescence was observed from secondary phases within the crystal. Gamma-ray pulse height spectra collected using a 137Cs source exhibited only a Compton edge for the crystals. Neutron modeling using Monte Carlo N-Particle Transport Code revealed most neutrons used in the detection setup are thermalized, and while using natural lithium in the crystal growth, which contains 7.6% 6Li, a 10 mm O by 10 mm sample of LiAlO2 has a 70.7% intrinsic thermal neutron capture efficiency. Furthermore, the pulse height spectra collected using a 241Am-Be neutron source demonstrated a distinct neutron peak.

Calcium and magnesium doped beta-phase gallium oxide (β-Ga2O3) single crystals were Czochralski grown in an iridium crucible and subsequently annealed in hydrogen at ~800° C. IR spectroscopy was used to investigate the roles of Mg and Ca dopants as well as H and Ir impurities. An IR peak at 3492 cm-1 was previously assigned to an O-H bondstretching mode of a MgH complex in hydrogen-annealed Ga2O3:Mg and an IR peak at 3541 cm-1 is tentatively assigned to a similar mode in a CaH complex for H annealed Ga2O3:Ca. An IR peak at 5148 cm-1 is attributed to the presence of Ir4+ when magnesium is present. Excitation with several different wavelengths was used to confirm the position of the Ir level within the band gap. Our results suggest that isolated substitutional Ca dopants are less effective as deep acceptors than Mg. Polarization dependence of the iridium IR spectra is also discussed.

The presence of second phase defects, particularly flux inclusions of tellurium rich composition, are of great concern for charge collection efficiency in cadmium zinc telluride (CZT) and cadmium telluride (CT) material intended for applications such as radiation detection. These inclusions can distort applied electric field lines within the detector as well as act as trapping centers for charge carriers. Reduction and/or elimination of these inclusions is required to achieve appropriate charge collection efficiencies, especially in detectors of thicknesses greater than 5 mm. These so-called flux inclusions are understood to form as a consequence of constitutional undercooling at the crystal growth interface. In this study, a forced melt convection technique was applied in Vertical Bridgman (VB) melt growth of CZT without reducing imposed growth rates of ∼2 mm/hr. Several rotation profiles were tested while adjusting the melt composition from 51.62 to 61.75 atomic percent (at%) Te where the Te concentration was initially increased to improve overall material purity. With forced melt convection, the best inclusion distributions were achieved with highly Te rich melt compositions, far beyond the stoichiometric composition range for the CZT system. Average inclusion diameters were reduced to 2 µm while inclusions greater than 5 µm were essentially eliminated. Composition analyses of these ingots revealed near equilibrium concentrations of Te, even with ingots grown from Te concentrations as high as 61.75 at% Te. In this paper, a recipe for the reduction of inclusions in CZT melt growth is put forward and the implications of this method on our understanding of inclusion formation are discussed.

Nd:YAG is a well-known laser material typically grown from the melt using the Czochralski (CZ) method, and like many other doped materials grown from the melt, it suffers from dopant segregation, giving an average Nd concentration in the crystal (Nd%) far less than that in the melt, with Nd variation along the growth axis. Here, the Nd segregation issue is addressed by the successful implementation of the Accelerated Crucible Rotation Technique (ACRT) with CZ. Compared to conventional CZ, ACRT provided improved Nd uniformity, higher Nd incorporation, and control of Nd% along the growth axis, even achieving higher Nd% in the crystal than the initial Nd from the overall melt. ACRT also affects the solid/liquid interface shape and thus the radial segregation. It is thus shown that ACRT and the mixing it provides is promising for achieving unconventional dopant profiles in CZ crystals.

Gallium oxide is a promising semiconductor for its potential as a material in the field of power electronics. The effects of iridium impurities on undoped, Mg-doped, and Ca-doped gallium oxides were investigated with IR spectroscopy. In undoped and Ca-doped β-Ga2O3, IR peaks at 3313, 3450, and 3500 cm−1 are tentatively assigned to O–H bond-stretching modes of IrH complexes. Mg-, Ca-, and Fe-doped samples show an Ir4+ electronic transition feature at 5148 cm−1. By measuring the strength of this feature vs photoexcitation, the Ir3+/4+ donor level was determined to lie 2.2–2.3 eV below the conduction band minimum. Ga2O3:Mg also has a range of sidebands between 5100 and 5200 cm−1, attributed to IrMg pairs. Polarized IR measurements show that the 5248 cm−1 peak is anisotropic, weakest for light polarized along the c axis, consistent with Lenyk et al. [J. Appl. Phys. 125, 045703 (2019)].

Arsenic dopant was incorporated in CdTe absorber layers in high-efficiency CdTe cells using feedstock doped with 1018cc-1for sublimation of films. The goal of the work was to develop a feasible method for creating a hole density equal to, or greater than that currently achievable using copper doping using a CuCl treatment. Doping with arsenic resulted in a modest increase in open-circuit voltage (V OC ) and a large improvement in fill-factor and conversion efficiency when compared with copper-doped devices with similar structure. All experiments were performed in the presence of cadmium overpressure to encourage dopant activation in tellurium vacancy sites. Arsenic incorporation was measured using Secondary Ion Mass Spectrometry (SIMS) at 4E +16 atoms/cc-1,about four times greater incorporation than previously seen by the authors. Using a CdSeTe/CdTe graded absorber and arsenic doping, a conversion efficiency of 16.79% was achieved.

We have used Doppler-broadening of the positron-electron annihilation radiation technique and VASP calculations to verify the previously reported vacancy formation enthalpy Hvf in polycrystalline depleted uranium. Experimentally we have confirmed a Hvf of (1.6 ± 0.2) eV. VASP calculations using GGA and LDA approximations gave vacancy formation enthalpies values of 1.98 eV and 2.22 eV respectively. We found residual oxygen in the sample diminished these values by 50% or more. Our new experimental and theoretical data supports the notion that oxygen impurities in the sample are responsible for lower values of vacancy formation enthalpies. Measured and calculated vacancy formation enthalpies, as well as the obtained oxygen migration enthalpy of (0.6 ± 0.1) eV, are compared and discussed with values reported in the literature. Fil: Lund, K. R.. Washington State University; Estados Unidos Fil: Lynn, K. G.. Washington State University; Estados Unidos Fil: Weber, M. H.. Washington State University; Estados Unidos Fil: Macchi, Carlos Eugenio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina Fil: Somoza, Alberto Horacio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina Fil: Juan, Alfredo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Bahía Blanca. Instituto de Física del Sur. Universidad Nacional del Sur. Departamento de Física. Instituto de Física del Sur; Argentina Fil: Okuniewski, M. A.. Idaho National Laboratory; Estados Unidos

Zinc Tellurite (ZnTeO 3 ) crystals were grown for the first time using a modified Bridgman method with a 2.5 kHz radio frequency (RF) furnace. Single crystal growth of ZnTeO 3 was hindered by many complicating factors, such as the evaporation of TeO 2 above 700 °C and the formation of more than one phase during crystal growth. While there were several successful runs that produced ZnTeO 3 single crystals, it was found that large (≥10 cm 3 ) single ZnTeO 3 crystals resulted when the crucible was exposed to a steeper vertical thermal gradient and when the temperature of the melt was raised to at least 860 °C. The results of powder X-ray diffraction (XRD) patterns were in accordance with the X-ray powder diffraction file (PDF) for ZnTeO 3 . Some optical, electrical and structural properties of ZnTeO 3 single crystals were reported in this paper.

The structural and thermal properties of yttrium-aluminum-gadolinium-gallium (Y2.97Gd0.03Al2Ga3O12) single crystals doped with terbium (0.1%), cerium (0.01%) and co-doped with both terbium and cerium ((0.1, 0.01)%) were investigated. All samples were heated (calcined) at 1400°C for 15 hours before crystallization. X-ray powder diffraction (XRD) patterns of all calcined samples showed the presence of yttrium gallium aluminate (Y3Al2Ga3O12) and gadolinium gallium oxide (Gd3GaO6) while the grown crystals were single phase of Y3Al2Ga3O12. The lattice parameter of the crystals decreased with Ce doping. The thermal conductivity of each sample was determined from 25°C to 300°C and found to decrease exponentially with increasing temperature. All doped crystals have different thermal conductivity, which is attributed to the crucial influence of crystals structures. 0.01% Ce:YAGG was found to be a strong candidate for scintillators and other lasing materials because of its good thermal behavior (10.71 W/m·K).

The 510–525 nm green emission in melt grown Cermet bulk ZnO single crystals is investigated. It was observed that the green emission intensity is strongly influenced by the presence of zinc vacancies. Green emission intensity was found to decrease by more than two orders of magnitude by reducing zinc vacancy concentration upon annealing in cadmium metal environment. Positron annihilation spectroscopy, photoluminescence and hall measurements support this argument.

A unique ampoule rotation system was developed at the Center for Materials Research at Washington State University for enhancing convection in the cadmium zinc telluride (CZT) melt by applying different ampoule rotation schemes (RS). Experiments were performed with different initial charge material concentrations and rotation parameters (acceleration, speed, rotation time, etc.). The applied speed and acceleration ranged from 30 rpm to 50 rpm and 30 rpm2 to 200 rpm2, respectively. Zinc (Zn) distribution profiles of radial and axial slices from the same regions in the grown ingot were determined by room-temperature photoluminescence mapping. The results demonstrate the effects of ampoule rotation on Zn segregation and growth interface evolution. The most stable interface propagation was obtained when 0.2 atomic percent (at.%) excess tellurium (Te) was used in the initial charge material along with a trapezoidal RS. Uniform radial Zn distribution was achieved using triangular RS, which is because of the interface flatness near the axis. Comparison of secondary phase (SP) generation for different RS and initial excess Te was performed. Closed-container CZT growth was performed using the trapezoidal RS, which resulted in high single-crystal yield with lower-diameter SP near the last-to-freeze region. High-resistivity (on the order of 1010 Ω-cm) crystals were obtained from all the RS. The mobility–lifetime product (μτ)e of electrons for planar detectors was found to be on the order of 3 × 10−3 cm2/V to 5 × 10−3 cm2/V for all the RS with 3.5 at.% excess Te growths.

Non-stoichiometry related extended defects in CdTe/CZT, such as tellurium inclusions and precipitates are known to be detrimental bulk defects in detector grade cadmium zinc telluride. In our attempt to minimize the size of tellurium inclusions we have employed accelerated crucible rotation technique in modified vertical Bridgman growth configuration. Acceleration and deceleration rate as high as 900 rpm2 was successfully applied during superheated melt mixing and growth. By comparing growths with and without ACRT under otherwise identical growth conditions, it was observed that the average inclusion size reduced by more than 50 percent due to ACRT. Additionally, we will discuss the effect of forced melt convection on the axial zinc and dopant segregation profile. Electrical characterization, spectrometric performance and purity analysis of the grown crystals will be presented.

ZnO bulk single crystals were doped with sodium by thermal diffusion using sodium dispensers. Secondary-ion mass spectrometry measurement shows the diffusion of sodium with concentration ∼1×1018 cm−3 in near surface region. Photoluminescence (PL) measurements show donor acceptor pair (DAP) emission at 408 nm at room temperature which exhibits a blue-shift to 404 nm at 9 K. DC Hall measurements show the mixed conduction due to low Hall voltage in these samples. PL measurements and variable temperature resistivity measurements suggest that the sodium acceptor activation energy is ∼0.300 eV.

A mixed garnet scintillator host material is obtained from the melt—Yttrium Gadolinium Gallium Aluminum Garnet (YGGAG). In addition to the high thermal and chemical stability and radiation hardness found in garnet crystals, it offers sensitivity to neutrons due to the presence of Gd atoms, has lower melting temperature than yttrium aluminum garnet, and similar crystallization behavior suitable for growth of large volume crystals. Crystals of YGGAG doped with Ce of 10×10×10 mm 3 have already demonstrated energy resolution of 10% at 662 keV.

A transient, coupled model has been developed to analyze the segregation of zinc in cadmium zinc telluride (CZT) grown in an electrodynamic gradient freeze (EDG) furnace. The coupled model consists of a local model that solves for time-dependent melt flow, heat transfer, melt–crystal interface position, and zinc distribution in both melt and solid phases and a quasi-steady-state global model that features realistic furnace heat transfer. After verification and validation tests, the model is applied to predict composition patterns in a large-scale CZT EDG growth system previously analyzed by Gasperino et al. [On crucible effects during the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace, J. Crys. Growth 311 (2009) 2327–2335]. Surprisingly, anomalous zinc segregation is predicted, featuring a non-monotonic axial concentration profile and several local minima and maxima across the boule. A mechanistic explanation is put forth based on the cumulative effect of changes in multi-cellular melt flow structures, a particularly susceptible occurrence for CZT systems. Additional effects of furnace translation rate and solid state diffusion are probed.

A modified high-pressure vertical Bridgman (HPVB) method has been used to grow single crystals of lead magnesium niobate–lead titanate (PMN–PT) using self-seeding. The starting charge was prepared close to stoichiometric composition of (1− x )Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 , ranging from x =0.29 to x =0.32. The ingots grown had a top diameter of ∼114 mm and weighing ∼1.9 kg with a volume of ∼230 cc. Standard form off-the-shelf platinum crucibles from vendors with a wall thickness ∼0.34±0.01 mm were used. The thinner platinum helped to attain a larger radial thermal gradient as well as enhancing the cost effectiveness of the process by reducing usage of precious metals. An oxygen partial pressure of 8000–10 000 ppm was used and controlled during the entire growth process. Self-seeding technique was used in order to attempt to grow large diameter single crystals of PMN–PT. The composition variation in the ingot is dependent on the growth rate, thermal gradients and oxygen partial pressure. The segregation coefficient of Ti was 0.86±0.008 for the starting composition of x =0.32.

(Ti,Al)-type ordered γ’ phase in the commercial nickel-based superalloy Inconel X-750 was investigated using Coincidence Doppler Broadening (CDB) tech-nique. The results obtained are discussed in terms of positron annihilation in two well-defined states: one corresponding to the matrix (γ phase) and a second related to the γ’ precipitates. Between these two aging stages, CDB distributions corresponding to selected intermediate aging treatments could be presented ex-actly, within the experimental scatter, as a linear combination of the γ and γ’ signatures.

In order to progress positron and antimatter related research, it is highly desirable to develop options for intense sources of positrons capable of fueling positron beams with >107 positrons/sec. At the Center for Materials Research at Washington State University, we are investigating 13N as a positron source based on the nuclear reaction 12C(d,n)13N. Based on cross section data and earlier tests a source activity of about 11 mCi per μA of 3 MeV deuterons can be achieved. At 300 μA a 3 (4) MeV Van de Graaff accelerator will generate 1.2 (2.0) × 1011 positrons/sec in a graphite target. Several methods of utilizing this production rate for moderated positron beams have been tried. These include single crystal CVD diamond, high and low density graphite, frozen source gases, tungsten foil moderation and solid gas moderation. To date, the most successful approach yielded ∼105 moderated positrons per second – efficient moderation of the source flux has not been accomplished. We will present the current status and discuss possible reasons for the poor performance. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Cadmium telluride (CdTe) has become one of the most useful and versatile photonic materials. While many applications require the highest quality material possible, others can sacrifice some degree of sample quality in favor of reduced fabrication costs. Here, we explore the deposition of CdTe thin films deposited on (100) silicon substrates in the absence of costly ultrahigh vacuum conditions. This inevitably leads to the deposition of films on silicon’s native oxide. The work presented here explores the trade-offs in sample quality as determined by a host of characterization techniques. The films were deposited using the pulsed laser deposition technique at relatively low growth rates and at an optimized substrate temperature of 300°C. X-ray diffraction data show only (111) oriented CdTe with rocking curve widths broadened due to the lack of an epitaxial relationship between the film and substrate. Atomic force microscopy images confirm that the films have a smooth surface morphology as was suggested by ...

Sodium acceptors were diffused into ZnO bulk single crystals to a depth of ~1μm, with a near-surface concentration of ~1018–cm3. An O–H local vibrational mode (LVM) was observed at 3304–cm–1, at a temperature of 9 K, in hydrogenated samples. The LVM is attributed to an O–H bond-stretching mode adjacent to a Na acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2466–cm–1. The isotopic frequency ratio is similar to values found in other hydrogen complexes. In the deuterated sample, a sideband at 2461–cm–1 is attributed to a Fermi resonance.

Zinc oxide (ZnO) has shown great promise as a wide band gap semiconductor with optical, electronic, and mechanical applications. First-principles investigations by C. G. Van de Walle (Phys. Rev. Lett. 85 (2000) 1012) suggest that hydrogen may act as a shallow donor in ZnO. These same predictions also apply to deuterium (D). Using IR spectroscopy we have observed O–H and O–D stretch modes at 3326.3 and 2470.3 cm −1 , respectively, in the same sample at a temperature of 14 K . These frequencies are in good agreement with the theoretical predictions for hydrogen and deuterium in an antibonding configuration. We have also performed preliminary polarization measurements at room temperature showing that the dipole of the O–H complex does not lie parallel to the c-axis of wurtzite ZnO.

In this study, four yttrium aluminum garnet single crystals co-doped with cerium and lithium were produced by the Czochralski method and the scintillation and defect properties were investigated. Our results demonstrated an increase in luminescence with Li co-doping as well as elimination of longer decay times. Surprisingly, although Li is monovalent, no oxidation of cerium from Ce3+ to Ce4+ was found as would be expected to maintain charge neutrality. Additionally, thermoluminescence results indicated a reduction in the trapping of charge carriers by shallow and deep traps, and room temperature photoluminescence measurements showed an improvement in the Ce3+ 5d to 4f transition efficiency.

Samples of TiN hard coatings prepared by physical vapour deposition (PVD) were investigated by means of depth-sensitive positron annihilation spectroscopy. The results indicate that the samples are at the limits of the applicability of this method presumably due to the high defect concentration. Our findings also show that, though the samples are thoroughly characterized by other independent methods, they might not be sufficient to explain all aspects of positron-solid interactions in these cases.

Energy-resolved two-quantum annihilation in flight of positrons with energies ranging from 10 to 71.6 keV was observed. An energy-dispersive two-detector coincidence system was used to observe the sum and difference energies of the {gamma} rays from annihilating positron-electron pairs. For positrons penetrating carbon foils the c/v dependence of the annihilation cross section is confirmed. Spectra obtained from gold-coated carbon foils show evidence of in-flight annihilation with gold M-shell electrons. (c) 1999 The American Physical Society.

We use positron annihilation spectroscopy (PAS) to identify the phosphorus-defect complex ({sup {asterisk}}D{sup {minus}}) in n -type hydrogenated amorphous Si (a -Si:H). The positrons are attracted and localized at the small open volume associated with the dangling bond defects. The radiation detected after annihilation gives a characteristic P signature, regarded as a {sup {asterisk}}D{sup {minus}} {open_quotes}fingerprint.{close_quotes} Additional evidence is obtained from a comparison to P-implanted amorphized Si, as well as from theoretical calculations. This work lays the foundation for PAS studies of impurity-defect related processes in a -Si:H. {copyright} {ital 1999} {ital The American Physical Society}

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 °C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 °C.

New data on positron collisions with atomic hydrogen leading to ionization were taken by using the high-intensity positron beam at Brookhaven National Laboratory (BNL). The measured cross section values for positron-impact ionization, which supersede earlier ones, are in good agreement with other experimental and most theoretical results, while the new data for positronium formation, formerly normalized to impact-ionization data, now disagree with recent theoretical predictions.

With this article we intend to shed some light on all the important characteristics of the up-to-date most efficient positron moderators, the rare gas solids. We stress on the importance of the impurities in the performance of the solid rare gas moderators. The impurity factor is linked with the crystalline changes to explain the effect of annealing, and we demonstrate the role of impurities in the endurance. Significant increase in the low energy positron yield is observed after repeated anneals. The positron energy distributions from Ar, Kr, and Xe moderators are measured to be about 2 eV (FWHM).

This work investigated surface material modifications in high-purity beryllium foils resulting from 1-keV deuterium ion implantation into specimens for which the anneal temperatures and implantation temperatures were varied. Defects in unimplanted and in deuterium-implanted beryllium were characterized principally by positron-beam depth-profile analyses. Depth-profiles of the defect distributions in the specimens were made by stepping the energy of the positron beam from 0.055 keV to 40 keV, accompanied by measurements of the Doppler-broadened annihilation radiation line shape at each positron energy. These analyses identified a varying defect structure in beryllium, dependent on the previous anneal history of the material and on the temperature of the material during implantation with energetic deuterium ions. For specimens implanted at room temperature with 1-keV/D ions, the beam-induced defect structure had a profile that was peaked near the mean. range of the implanting deuterium and that extended beyond the implantation zone. Isochronal step-thermal anneal experiments revealed that deuterium was released from these defects at a temperature of about 400K, indicative of shallow traps, and that the defect structure annealed at temperatures above 623K. The beam-induced vacancy-defect complexes were estimated to be 1-nm voids for 1-keV/D implantation into Be at room temperature. For beryllium implanted at temperaturesmore » of 723K with 1-keV/D ions, these measurements revealed that the beam-induced defect structure was much broader and extended far beyond the implantation zone. Isochronal stepthermal anneal experiments for these specimens revealed a more stable defect structure, with the onset of defect annealing at 775K. There was no evidence of deuterium release at lower temperatures, indicating that for beryllium implanted at elevated temperatures, deuterium is retained in deep traps.« less

Reduction of background using a coincidence-detection system in Doppler-broadening spectroscopy of positron-annihilation radiation allows us to examine the contribution of high-momentum core electrons. The contribution is used as a fingerprint to identify chemical variations at a defect site. The technique is applied to study a variety of open volume defects in Si, including decorated vacancies associated with doping. \textcopyright{} 1996 The American Physical Society.

Silicon-implanted thermal SiO2 layers were studied using depth-resolved positron annihilation spectroscopy (PAS) and transmission electron microscopy (TEM). TEM observations show the presence of silicon nanocrystals (Sinc) in the region between 200 nm and 300 nm. The defect annealing behavior is studied by means of PAS. For 1 000°C annealed samples at a depth for which Sinc are observed, a distinctive PAS signal is detected and ascribed to the Sinc/SiO2 interface.

The defect structure of the SiO{sub 2}-Si interface has been studied using variable energy positron two-dimensional angular correlation of annihilation radiation (2D-ACAR). As the first depth-resolved 2D-ACAR measurement, unique information about this interface was obtained:The formation and trapping of positronium atoms are observed at the microvoids ({approximately}10 A in size) in the oxide and interface regions. Positron trapping and annihilation at the {ital P}{sub {ital b}} centers in the interface region are inferred. The existence of the microvoids in the interface region is beyond the current interface model, and the results may have a profound impact on the understanding of the interface growth. {copyright} {ital 1996 The American Physical Society.}

Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>1019 cm−3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm−1, attributed to surface O-H species. When Li2CO3 is used, a structured blue luminescence band and O-H mode at 3327 cm−1 are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

The results of several positron annihilation (Doppler broadening) experiments have been analyzed using the BNL Monte Carlo implantation profiles and the program VEPFIT. The program VEPFIT has been modified so that scaled, parameterized multilayer profiles can also be used as the initial condition for the diffusion equation solution. We have looked at both elemental (e.g. amorphous silicon) and multilayer (e.g. Pd Si ) systems. Strong correlations between the input implantation profile parameters and the fitted values obtained for the diffusion lengths and overlayer thicknesses for the multilayer systems have been found. The effect of uncertainties in the mean depth on the value of the diffusion length and hence the defect concentrations will be discussed. The impact of reimplanting backscattered positrons on both the implantation profiles and the fitted diffusion lengths will also be presented.

Different rotation profiles were applied to the ampoule during Vertical Bridgman (VB) growth of Cd0.9Zn0.1Te (CZT) for enhancing compositional homogeneity, minimizing radial and axial segregation and stabilizing growth interface. The radial Zinc (Zn) segregation was significantly minimized. Improvements in the axial Zn segregation were also noticeable. The modifications in interface shapes during the growth were prominent from the photoluminescence (PL) studies. Improved grain structure was observed with growths containing lower (0.5 wt. %) initial excess Te; however with higher amount of initial excess Te (7.5 wt. %) high resistivity ingots with improved carrier properties were grown consistently but with lower single crystal yield. With more intense rotations, resistivity values within the ingot varied by an order of magnitude showing non uniformity in distribution of dopants.

Positronium formation (Ps) cross sections for positrons impinging on atomic hydrogen were measured in the impact energy range from 13 to 255 eV at the High Intensity Positron (HIP) beam at Brookhaven National Laboratory (BNL). The Ps-formation cross section was found to rise rapidly from the threshold at 6.8 eV to a maximum value of (2.98±0.18) ×10−16 cm2 for ∼15 eV positrons. By 75 eV it drops below the detection limit of 0.17×10−16 cm2 which is the present level of statistical uncertainty. A more elaborate data analysis was performed leading to somewhat smaller cross sections than originally published [1]. During the course of this experiment further relative data on impact-ionization cross sections were accumulated.

An experimental investigation of positron channeling was made with a high-angular resolution apparatus, employing positrons of kinetic energy 1 MeV, derived from the Brookhaven National Laboratory Dynamitron. The pattern of transmission through a Si (100) single crystal of thickness 0.245 {mu}m was investigated for a number of major planes. The authors have observed for the first time, in excellent detail, the fine structure of the channeling pattern expected to arise from the particle diffraction effects, theoretically explainable in terms of the quantum-mechanical many-beam calculations.

Open‐volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable‐energy positron beam depth profiling. The behavior of the implantation‐induced lattice defects upon high temperature annealing and their role in the surface‐oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 °C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two‐step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.