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We present ab initio-based electronic transport calculations on the effect of uniaxial and bi-axial stress on the CoSi 2 /n Si interface resistivity for the three main silicon crystallographic directions. For the [001] case, we identify two distinctive low and high bias conduction regimes for both compressive and tensile stress. In these regimes, the current is dominated by electronic transmission pathways near the Γ point for bias up to ~0.1V, while for higher bias it is dominated by transmission at the (±1/2, ±1/2) conduction band valleys of the Brillouin zone, which results in a contact resistivity decrease of up to 30% at 0.2V bias. This effect is less pronounced for the [110] direction, and negligible for the [111] case due to the symmetry of the Si conduction band valleys along these directions. This study provides insight into stress-based optimization pathways for contact resistivity reduction of silicide interfaces in next generation semiconductor devices.

Graphitic nanowiggles (GNWs) are 1D systems with segmented graphitic nanoribbon GNR edges of varying chiralities. They are characterized by the presence of a number of possible different spin distributions along their edges and by electronic band-gaps that are highly sensitive to the details of their geometry. These two properties promote these experimentally observed carbon nanostructures as some of the most promising candidates for developing high-performance nanodevices. Here, we highlight this potential with a detailed understanding of the electronic processes leading to their unique spin-state dependent electronic quantum transport properties. The three classes of GNWs containing at least one zigzag edge (necessary to the observation of multiple-magnetic states) are considered in two distinct geometries: a perfectly periodic system and in a one-GNW-cell system sandwiched between two semi-infinite terminals made up of straight GNRs. The present calculations establish a number of elementary rules to relate fundamental electronic transport functionality, electronic energy, the system geometry, and spin state.

A first-principles approach is used to establish that substitutional phosphorus atoms within carbon nanotubes strongly modify the chemical properties of the surface, thus creating highly localized sites with specific affinity towards acceptor molecules. Phosphorus-nitrogen co-dopants within the tubes have a similar effect for acceptor molecules, but the P-N bond can also accept charge, resulting in affinity towards donor molecules. This molecular selectivity is illustrated in CO and NH3 adsorbed on PN-doped nanotubes, O2 on P-doped nanotubes, and NO2 and SO2 on both P- and PN-doped nanotubes. The adsorption of different chemical species onto the doped nanotubes modifies the dopant-induced localized states, which subsequently alter the electronic conductance. Although SO2 and CO adsorptions cause minor shifts in electronic conductance, NH3, NO2, and O2 adsorptions induce the suppression of a conductance dip. Conversely, the adsorption of NO2 on PN-doped nanotubes is accompanied with the appearance of an additional dip in conductance, correlated with a shift of the existing ones. Overall these changes in electric conductance provide an efficient way to detect selectively the presence of specific molecules. Additionally, the high oxidation potential of the P-doped nanotubes makes them good candidates for electrode materials in hydrogen fuel cells.

We present a density functional theory study of the electronic structure, quantum transport and mechanical properties of recently synthesized phosphorus (P) and phosphorus-nitrogen (PN) doped single-walled carbon nanotubes. The results demonstrate that substitutional P and PN doping creates localized electronic states that modify the electron transport properties by acting as scattering centers. Nonetheless, for low doping concentrations (1 doping site per similar to 200 atoms), the quantum conductance for metallic nanotubes is found to be only slightly reduced. The substitutional doping also alters the mechanical strength, leading to a 50% reduction in the elongation upon fracture, while Young's modulus remains approximately unchanged. Overall, the PN- and P-doped nanotubes display promising properties for components in composite materials and, in particular, for fast response and ultra sensitive sensors operating at the molecular level.

A detailed characterization, using high resolution electron microscopy/microanalysis (SEM, TEM, HRTEM, and EDX), reveals tubular carbon nanostructures exhibiting complex and fascinating morphologies. The materials were obtained by sulfur-assisted chemical vapor deposition. It is demonstrated that S not only acts on the catalyst, but also can be detected in the carbon lattice of the nanostructures. The experimental data presented here confirms the critical role of S, which is responsible for inducing curvature and therefore influencing the final carbon nanostructure morphology. In particular, different types of covalent Y-junctions of CNTs and even sea urchin-like nanostructures were produced and their experimental conditions are listed and discussed.

We examine the possibility of controlling nanotube growth and simultaneously manipulating the nanotube properties by adding elements in minute amounts (such as nitrogen, phosphorous, and sulfur) that are different from carbon and the metal catalyst during the growth process. This procedure is shown to be capable of producing bamboo-type morphologies, heterodoped carbon nanotubes, and Y-junctions. This also represents a critical step toward tailoring properties and controlling nanotube architectures, thus promoting the development of novel materials with unusual electronic applications. The underlying formation mechanisms that lead to the observed structures and morphologies are elucidated using wide-ranging electronic structure calculations that reveal the fundamentally different nature of nitrogen, phosphorous, and sulfur during carbon nanotube growth. © 2008 Wiley Periodicals, Inc. Int J Quantum Chem, 2009

A combination of theoretical techniques, high-resolution microscopy, and energy-dispersive X-ray spectroscopy shows the role sulfur plays in branching phenomena during carbon nanotube (CNT) network growth. A model is proposed in which small amounts of sulfur are enough to trigger the growth of a bud in a CNT, leading to kink formation and subsequent branch growth.

Carbon nanotube growth in the presence of nitrogen has been the subject of much experimental scrutiny, sparking intense debate about the role of nitrogen in the formation of diverse structural features, including shortened length, reduced diameters, and bamboo-like multilayered nanotubules. In this paper, the origin of these features is elucidated using a combination of experimental and theoretical techniques, showing that N acts as a surfactant during growth. N doping enhances the formation of smaller diameter tubes. It can also promote tube closure which includes a relatively large amount of N atoms into the tube lattice, leading to bamboo-like structures. Our findings demonstrate that the mechanism is independent of the tube chirality and suggest a simple procedure for controlling the growth of bamboo-like nanotube morphologies.

Tungsten ditelluride (WTe2) is a transition metal dichalcogenide (TMD) with physical and electronic properties that make it attractive for a variety of electronic applications. Although WTe2 has been studied for decades, its structure and electronic properties have only recently been correctly described. We experimentally and theoretically investigate the structure, dynamics and electronic properties of WTe2 and verify that WTe2 has its minimum energy configuration in a distorted 1T structure (Td structure), which results in metallic-like transport. Our findings unambiguously confirm the metallic nature of WTe2, introduce new information about the Raman modes of Td-WTe2 and demonstrate that Td-WTe2 is readily oxidized via environmental exposure. Finally, these findings confirm that, in its thermodynamically favored Td form, the utilization of WTe2 in electronic device architectures such as field effect transistors may need to be reevaluated.

First-principles calculations are employed in the study of the electronic and quantum transport properties of hexagonally shaped boron nitride (h-BN) clusters embedded in either zigzag or armchair graphene nanoribbons. Chemical doping of the h-BN cluster was taken into consideration by using carbon atoms to replace either the boron (B27N24C3) or the nitrogen (B27N24C3) sites in the central ring. While the quantum conductance of the system with zigzag edges is found to be spin-dependent, it was observed that the system with an armchair edge requires an electron imbalance in order to show a spin-dependent conductance. Furthermore, the possibility of molecular adsorption onto these doped systems is studied. The effects of the attached molecules to the quantum conductance shows the potential of these hybrid systems for molecular sensing applications.

We have studied in detail the carbon and nitrogen bonding environments in nitrogen-doped single-walled carbon nanotubes (SWCNTs). The samples consisting of long strands of N-doped SWCNTs were synthesized using an aerosol assisted chemical vapor deposition method involving benzylamine-ethanol-ferrocene solutions. The studied samples were produced using different benzylamine concentrations in the solutions, and exhibited a maximum concentration of ca. 0.3%at of N, determined by X-ray photoelectron spectroscopy (XPS). In general, we observed that the ratio between substitutional nitrogen and the pyridine-like bonded nitrogen varied upon the precursor composition. Moreover, we have observed that the sp2-like substitutional configuration of the C-N bond does not exceed the 50% of the total N atomic incorporation. In addition, we have characterized all these samples using Raman spectroscopy and electron microscopy.