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Start Over Author "Shun-Lung Yen" Topic chemistry.chemical_compound
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1. High temperature stable n-i-n resonant tunneling diode embedded InAs quantum dots in GaAs/Al/sub x/Ga/1-x/As double barriers

Author

null Shiang-Feng Tang, null Cheng Der Chiang, null Jiunn-Jye Luo, null Tzu-Chiang Chen, and null Shun-Lung Yen

Subjects
Materials science, Condensed matter physics, Organic chemicals, business.industry, Resonant-tunneling diode, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Gallium arsenide, chemistry.chemical_compound, chemistry, Semiconductor quantum dots, Materials science and technology, Quantum dot, Optoelectronics, business, Quantum tunnelling
Abstract

The quantum dot (QD) resonant tunneling diode (RTD) with Al/sub x/Ga/sub 1-x/As double-barriers has been investigated under operating large temperature ranges. A superior temperature-stability of peak-to-valley current ratio (PVR) is demonstrated. The electrons of resonant tunneling transport via nm-scale InAs quantum dots buried in GaAs spacer layers bounded by a pair of very thin Al/sub 0.3/Ga/sub 0.7/As barriers.

Published
2005
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