1. Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices
- Author
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Claudia Cortés-García, Ricardo Eliu Lozoya-Ponce, Mario Ponce-Silva, Luis Gerardo Vela-Valdés, Oscar Miguel Rodríguez-Benítez, Juan Antonio Aqui-Tapia, and Abraham Claudio-Sánchez
- Subjects
Materials science ,Computer Networks and Communications ,lcsh:TK7800-8360 ,Gallium nitride ,02 engineering and technology ,semiconductors ,Capacitance ,law.invention ,chemistry.chemical_compound ,law ,MOSFET ,0202 electrical engineering, electronic engineering, information engineering ,Silicon carbide ,Power semiconductor device ,Electrical and Electronic Engineering ,Diode ,business.industry ,020208 electrical & electronic engineering ,Transistor ,lcsh:Electronics ,Semiconductor device ,021001 nanoscience & nanotechnology ,chemistry ,current-fed DC-DC resonant converter ,Hardware and Architecture ,Control and Systems Engineering ,Signal Processing ,photovoltaic systems ,Optoelectronics ,0210 nano-technology ,business ,parallel resonant tank - Abstract
This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)-based power devices. The results show that unidirectional switches (metal&ndash, oxide&ndash, semiconductor field-effect transistors (MOSFETs) plus diode) present hard switching as a result of the diode preventing the MOSFET capacitance of being discharged. The effectiveness of the converter was verified with a 200-W prototype with an input voltage range of 0&ndash, 30.3 V, an output voltage of 200 V, and a switching frequency of 200 kHz. The reduction losses by applying GaN versus Si and SiC technologies are 66.49% and 53.57%, respectively. Alternatively, by applying SiC versus Si devices the reduction loss is 27.84%. Finally, according to the results, 60% of losses were caused by the diodes on both switches.
- Published
- 2020