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Herein, a new multidentate ligand, 5-(imidazol-1-yl)-N′-(pyridin-4-ylmethylene) nicotinohydrazide (L), with an acylhydrazone group was synthesized and characterized. Subsequently, four porous Cd(II)-MOFs, i.e. [Cd(L)(NO3)]n (1), [Cd(L)Cl]n (2), [Cd(L)Br]n (3), and [Cd(L)I]n (4), were assembled using the ligand L by a solvothermal method and characterized by single-crystal X-ray diffraction, infrared spectroscopy, thermogravimetric analysis, and powder X-ray diffraction. Structural analysis shows that the coordination environments around Cd(II) in all the four compounds are different due to the different coordinated anions. Among them, the coordination geometries and the arrangement of five-coordinated groups of the compound 1 containing the coordinated NO3− anions are significantly different from those of the other three compounds containing halides. However, all the four MOFs have similar one-dimensional rhombic channels. In these channels, both the nitrate ions and the halide ions are attached to the inner walls of the pores. The CO2 adsorption properties of 1–4 were studied at 273 K, and the results showed that these compounds exhibit different adsorption capacities for CO2 due to the presence of different ions in their pores.

Organic field-effect transistors (OFETs) as nonvolatile memory units are essential for lightweight and flexible electronics, yet the practical application remains a great challenge. The positively charged defects in pentacene film at the interface between pentacene and polymer caused by environmental conditions, as revealed by theoretical and experimental research works, result in unacceptable high programming/erasing (P/E) gate voltages in pentacene OFETs with polymer charge-trapping dielectric. Here, we report a pentacene OFET in which an n-type semiconductor layer was intercalated between a polymer and a blocking insulator. In this structure, the hole barrier caused by the defect layer can be adjusted by the thickness and charge-carrier density of the n-type semiconductor interlayer based on the electrostatic induction theory. This idea was implemented in an OFET structure Cu/pentacene/poly(2-vinyl naphthalene) (PVN)/ZnO/SiO

In this paper, Fe X Al 1-X films have been deposited on silicon substrates using electron beam evaporation, which have been not reported to prepare Fe X Al 1-X films before. Subsequently, the films were annealed in vacuum better than 3×10 -4 Pa for 1 hour at 100°C, 280°C, 330°C, 450°C and 500°C, respectively. Electrical resistivities of the samples were been measured by four point probe, and microstructures of the samples were characterized by X-ray diffraction(XRD). The results show that, the resistivity of films reduces gradually with increasing of the annealing temperature, and the structure of films can be improved after annealing. In addition, the resistivity of film reduces gradually with increasing thickness and comes closed to the that of bulk when the film thickness becomes thicker than 100nm.