1. Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE
- Author
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Tooru Tanaka, Qixin Guo, Y. Matsuo, Mitsuhiro Nishio, A. Tomota, T. Shono, Katsuhiko Saito, and Y. Nakatsuru
- Subjects
010302 applied physics ,Materials science ,Dopant ,Annealing (metallurgy) ,Magnesium ,Doping ,Inorganic chemistry ,Dimethylzinc ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,Mole fraction ,01 natural sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Materials Chemistry ,Metalorganic vapour phase epitaxy ,0210 nano-technology - Abstract
Zn1-xMgxSeyTe1-y layers have been grown on (100) ZnTe substrates by low-pressure metalorganic vapor phase epitaxy using dimethylzinc, bis-methylcyclopentadienyl magnesium ((MeCp)2Mg), diethylselenide and diethyltelluride as source materials. The Mg mole fraction of Zn1-xMgxSeyTe1-y layer can be controlled successfully by varying (MeCp)2Mg transport rate. P-type doping of this material has been tried using tris-dimethylaminophosphorus as a dopant source. The influence of annealing temperature or dopant transport rate upon the electrical property has been investigated. All the layers show p-type conduction even without annealing. Through this study, a maximum carrier concentration of 2.5×1018 cm−3 is obtained.
- Published
- 2017
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