1. Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays
- Author
-
T. Pardini, Jeff C. Robinson, B. J. Kozioziemski, Arianna Gleason, Serge Guillet, Andrew Aquila, Klaus Sokolowski-Tinten, Sébastien Boutet, P. Hamilton, R. M. Hill, Jason E. Koglin, Regina Soufli, T. Decker, Jennifer B. Alameda, Stefan P. Hau-Riege, and Matt J. Hayes
- Subjects
Work (thermodynamics) ,Materials science ,Silicon ,Delayed onset ,General Physics and Astronomy ,chemistry.chemical_element ,02 engineering and technology ,Physik (inkl. Astronomie) ,021001 nanoscience & nanotechnology ,01 natural sciences ,Linear particle accelerator ,chemistry ,Temporal resolution ,Hard X-rays ,0103 physical sciences ,Single crystal silicon ,Atomic physics ,010306 general physics ,0210 nano-technology ,Line (formation) - Abstract
In this work, we monitor the onset of nonthermal melting in single-crystal silicon by implementing an x-ray pump-x-ray probe scheme. Using the ultrashort pulses provided by the Linac Coherent Light Source (SLAC) and a custom-built split-and-delay line for hard x rays, we achieve the temporal resolution needed to detect the onset of the transition. Our data show no loss of long-range order up to 150±40 fs from photoabsorption, which we interpret as the time needed for the electronic system to equilibrate at or above the critical nonthermal melting temperature. Once such equilibration is reached, the loss of long-range atomic order proceeds inertially and is completed within 315±40 fs from photoabsorption.
- Published
- 2018