1. Emergence of interfacial conduction and ferromagnetism in MnTe/InP
- Author
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Masashi Kawasaki, R. Watanabe, Manabu Shirai, Minoru Kawamura, Toshiaki Tanigaki, Ryutaro Yoshimi, Atsushi Tsukazaki, Yoshinori Tokura, Ryotaro Arita, and Kei S. Takahashi
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Magnetism ,Chalcogenide ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Condensed Matter::Materials Science ,Magnetization ,chemistry.chemical_compound ,Ferromagnetism ,chemistry ,Hall effect ,0103 physical sciences ,Thin film ,010306 general physics ,0210 nano-technology ,Electronic band structure - Abstract
We report on emergence of two-dimensional conduction and ferromagnetism at the interface of MnTe thin films and InP substrates. The MnTe/InP heterostructures grown by molecular-beam epitaxy show thickness-independent sheet conductivity above a critical thickness of about 20 nm, indicating the formation of a conducting layer at the interface. Furthermore, the ferromagnetic behavior is confirmed by both magnetization and anomalous Hall effect measurements below a critical temperature of 270 K. The critical temperature is also independent of the thickness. By the investigation of the atomic structure with transmission electron microscopy, we observe a structural anomaly near the interface which consists of an antiprism-type Mn network unlike a prism-type Mn network of conventional MnTe. The band structure calculation shows that the antiprism-type MnTe can host metallic conduction and ferromagnetism, which is consistent with the present experimental results. The interface engineering based on the chalcogenide compound will develop a new arena for designing the emergent low dimensional conduction and magnetism.
- Published
- 2018
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