Transition metal oxide (TMO) semiconductors are abundant and inexpensive materials with remarkable electrical and chemical properties suitable for solar energy conversion. Solar power has the potential to deliver energy that is clean, renewable, and sustainable provided that it can be harvested efficiently. Semiconducting TMOs are extensively developed and utilized for this purpose, particularly in the construction of energy-harvesting solar devices. This research focuses on the thin film fabrication and utilization of TMO semiconductors namely, Cu2O, BiVO4, ZnO, TiO2, SnO2, and NiOx for photoelectrochemical (PEC) water splitting and photovoltaic (PV) devices. Chapter I provides a brief introduction to the chemical and electrical properties of semiconducting TMOs and their most common methods of preparation, as well as their broad applications in solar energy conversion.In Chapter II, the fabrication of a direct tandem Cu2O/Mo:BiVO4 PEC solar device is discussed. Here, we present a fabrication scheme that is facile and scalable, using electrochemical deposition for Cu2O and electrophoretic deposition for Mo:BiVO4. We prepared nanoparticles of BiVO4 and successfully doped the material with Mo to improve its electrical conductivity. Thermal annealing converts the Mo:BiVO4 into a semi-transparent material, allowing light to reach the Cu2O layer and partially protect it from corrosion. We show that Cu2O/Mo:BiVO4 on fluorine-doped tin oxide (FTO) substrate works as a photoanode for water oxidation, capable of evolving oxygen at a Faraday efficiency of 92% and achieving a photocurrent of 1.45 mA cm^-2 at 1.23 V vs. RHE under simulated sunlight conditions. The FTO/Cu2O/Mo:BiVO4 exhibited about nine times higher incident photon-to-light conversion efficiency (IPCE) value at 400 nm than the FTO/Mo:BiVO4 film. The FTO/Cu2O/Mo:BiVO4 device is still functional after 15 hours of continuous operation. Using surface photovoltage spectroscopy (SPS) and open circuit potential (OCP) measurements, we show that the Cu2O and Mo:BiVO4 form a p-n heterojunction and work as tandem under applied bias conditions. Chapter III emphasizes the use of SPS for the construction of a Cu2O-based PV cell. Here, we fabricated Cu2O by electrochemical deposition onto FTO, Mo and Ni conductive substrates. We show that Ni gives the highest surface photovoltage for Cu2O among all the substrates, providing up to 1.7 V at 285.75 mW-cm^-2 light intensity using a 405 nm light emitting diode (LED ) lamp. We also electrochemically deposited a ZnO overlayer to extract the electrons from Cu2O, which resulted in about 30% increase in the surface photovoltage. ZnO likely formed a deep depletion layer and removed the defect states in Cu2O as previously seen in the literature, causing the increase in photovoltage. Using SPS, we determined that the 1500-s deposition time for ZnO is optimal. Pre-made silver nanowires and conductive Ag paint were added to complete the final PV device structure. The completed device achieved an OCP value of ~16 mV under simulated 1 sun illumination, however, it still suffers from low conductivity issues. Improving the lateral conductivity in the ZnO electron transport layer (ETL ) layer and selecting metal front contact will be key to achieving a better-performing Cu2O-based PV device.Chapter IV focuses on the thin film fabrication of TiO2, SnO2, and NiOx selective transport layers and their application in the FTO/Cu2O/Mo:BiVO4 PEC device. Using combined spin coating and solution combustion synthesis methods, we optimized the thin film fabrication of these selective contacts at 250 oC. We monitored the reaction progress using infrared spectroscopy, and the conductivity and rectifying behavior of the films were evaluated by PEC measurements. Using SPS, we show that NiOx promotes hole extraction from Cu2O to the surface and remains the same after adding SnO2. Although all elements were detected, we could not confirm the presence of each selective transport layer in the sandwich FTO/Cu2O/NiOx/SnO2/Mo:BiVO4 FTO/TiO2/Cu2O/NiOx/SnO2/Mo:BiVO4 structures due to the thickness and low concentration of these materials in the device. Here, we report 25% and 50% photocurrent enhancements in the FTO/Cu2O/NiOx/SnO2/Mo:BiVO4 and FTO/TiO2/Cu2O/NiOx/SnO2/Mo:BiVO4 sandwich film structures, respectively at 1.23 V vs. reversible hydrogen electrode (RHE ) versus the PEC device structure without any charge selective contact.