1. Performance analysis and simulation of vertical gallium nitride nanowire transistors
- Author
-
Andreas Waag, Kristian Frank, Feng Yu, Bernd Witzigmann, Klaas Strempel, Hans Werner Schumacher, Friedhard Römer, Hutomo Suryo Wasisto, and Muhammad Fahlesa Fatahilah
- Subjects
Materials science ,Transconductance ,Nanowire ,Gallium nitride ,02 engineering and technology ,01 natural sciences ,law.invention ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,law ,Saturation current ,0103 physical sciences ,Materials Chemistry ,Electrical and Electronic Engineering ,Saturation (magnetic) ,010302 applied physics ,business.industry ,Transistor ,Doping ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,chemistry ,Optoelectronics ,0210 nano-technology ,business - Abstract
Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device.
- Published
- 2018